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FZ800R17KF6CB2

型号：

FZ800R17KF6CB2

描述：

IGBT模块[ IGBT-Modules ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

9 页

PDF大小：

118 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode  
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1700  
V
TC = 80 °C  
IC,nom.  
IC  
800  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
1300  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
TC=25°C, Transistor  
ICRM  
Ptot  
VGES  
IF  
1600  
6,6  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
+/- 20V  
800  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
1600  
170  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
4
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
IC = 800A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
2,6  
3,1  
3,1  
3,6  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 800A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 60mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
9,6  
52  
6,5  
V
Gateladung  
gate charge  
VGE = -15V ... +15V  
QG  
-
-
-
-
-
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
-
2,7  
VCE = 1700V, VGE = 0V, Tvj = 25°C  
VCE = 1700V, VGE = 0V, Tvj = 125°C  
-
-
0,02  
10  
1,5  
80  
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Alfons Wiesenthal  
date of publication: 04.08.2000  
revision: 2 (Series)  
approved by: Chr. Lübke; 11.08.2000  
1(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
IC = 800A, VCE = 900V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
V
GE = ±15V, RG = 1,8Ω, Tvj = 25°C  
-
-
0,3  
0,3  
-
-
µs  
µs  
VGE = ±15V, RG = 1,8Ω, Tvj = 125°C  
IC = 800A, VCE = 900V  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
VGE = ±15V, RG = 1,8Ω, Tvj = 25°C  
-
-
0,14  
0,14  
-
-
µs  
µs  
V
GE = ±15V, RG = 1,8Ω, Tvj = 125°C  
IC = 800A, VCE = 900V  
GE = ±15V, RG = 1,8Ω, Tvj = 25°C  
GE = ±15V, RG = 1,8Ω, Tvj = 125°C  
IC = 800A, VCE = 900V  
GE = ±15V, RG = 1,8Ω, Tvj = 25°C  
GE = ±15V, RG = 1,8Ω, Tvj = 125°C  
IC = 800A, VCE = 900V, VGE = 15V  
G = 1,8Ω, Tvj = 125°C, LS = 50nH  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
V
-
-
1,1  
1,1  
-
-
µs  
µs  
V
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
V
-
-
0,11  
0,12  
-
-
µs  
µs  
V
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
R
-
-
300  
325  
-
-
mWs  
mWs  
IC = 800A, VCE = 900V, VGE = 15V  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
RG = 1,8Ω, Tvj = 125°C, LS = 50nH  
t
P ≤ 10µsec, VGE ≤ 15V  
Kurzschlußverhalten  
SC Data  
ISC  
TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt  
-
-
3200  
12  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
pro Zweig / per arm  
-
0,08  
-
mΩ  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Diode / Diode  
IF = 800A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
IRM  
Qr  
-
-
2,1  
2,1  
2,5  
2,5  
V
V
forward voltage  
IF = 800A, VGE = 0V, Tvj = 125°C  
IF = 800A, - diF/dt = 6600A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
Rückstromspitze  
peak reverse recovery current  
-
-
800  
920  
-
-
A
A
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 800A, - diF/dt =6600A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
IF = 800A, - diF/dt = 6600A/µsec  
VR = 900V, VGE = -10V, Tvj = 25°C  
VR = 900V, VGE = -10V, Tvj = 125°C  
Sperrverzögerungsladung  
recovered charge  
-
-
170  
300  
-
-
µAs  
µAs  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
-
-
80  
-
-
mWs  
mWs  
160  
2(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Thermische Eigenschaften / Thermal properties  
min.  
typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
-
-
0,019  
0,034  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per module  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCK  
-
0,008  
-
K/W  
°C  
λPaste = 1 W/m*K  
/
λgrease = 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
-
-
-
-
150  
125  
125  
Betriebstemperatur  
operation temperature  
Top  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
internal insulation  
AlN  
17  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
10  
CTI  
275  
comperative tracking index  
M1  
M2  
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
8 - 10  
Gewicht  
weight  
G
1050  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
VGE = 15V  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
Tvj = 25°C  
Tvj = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
Tvj = 125°C  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
vGE = 20V  
vGE = 15V  
vGE = 12V  
vGE = 10V  
vGE = 9V  
vGE = 8V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
4(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 20V  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
Tj = 25°C  
Tj = 125°C  
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
IF = f (VF)  
Forward characteristic of inverse diode (typical)  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
Tvj=25°C  
Tvj=125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
VF [V]  
5(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
Rgon = Rgoff =1,8 Ω, VCE = 900V, Tj = 125°C, VGE = ± 15V  
1200  
Eoff  
EON  
Erec  
1000  
800  
600  
400  
200  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
1000  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 800A , VCE = 900V , Tj = 125°C, VGE = ± 15V  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
Eoff  
EON  
Erec  
0
2
4
6
8
10  
RG [Ω]  
6(8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
Zth:Diode  
Zth:IGBT  
0,001  
0,001  
0,01  
0,1  
1
10  
100  
t [sec]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
: IGBT  
: Diode  
: Diode  
1,82  
0,003  
3,35  
0,003  
8,99  
0,05  
3,8  
4,39  
0,95  
6,21  
0,75  
τi [sec]  
ri [K/kW]  
τi [sec]  
0,1  
18,22  
0,045  
6,22  
0,45  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA) Rg = 1,8 Ohm, Tvj= 125°C  
1800  
1600  
1400  
1200  
IC,Modul  
IC,Chip  
1000  
800  
600  
400  
200  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
VCE [V]  
7 (8)  
FZ800R17KF6CB2  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R 17 KF6C B2  
Äußere Abmessungen / external dimensions  
8(8)  
FZ800R17KF6CB2  
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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