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FZ800R12KS4

型号：

FZ800R12KS4

描述：

IGBT -模块[ IGBT-Module ]

品牌：

ETC[ ETC ]

页数：

9 页

PDF大小：

104 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VCES  
V
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
1200  
IC,nom.  
IC  
800  
A
A
Kollektor-Dauergleichstrom  
TC = 80°C  
TC = 25 °C  
DC-collector current  
1200  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
TC=25°C, Transistor  
ICRM  
Ptot  
VGES  
IF  
1600  
6,9  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
+/- 20V  
800  
Dauergleichstrom  
DC forward current  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
1600  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
A2s  
V
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
185.000  
2.500  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
I
C = 800 A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
3,00  
3,60  
-
-
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 800 A, VGE = 15V, Tvj = 125°C  
IC = 32 mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
Gate-Schwellenspannunggate threshold voltage  
4,5  
5,5  
52  
6,5  
V
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VGE = -15V ... + 15V, VCE = 600V  
Cies  
-
-
-
-
-
-
nF  
nF  
µC  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
t.b.d.  
8,4  
Gateladung  
gate charge  
QG  
VCE = 1200V, VGE = 0V, Tvj = 25°C  
VCE = 1200V, VGE = 0V, Tvj = 125°C  
ICES  
-
-
t.b.d.  
t.b.d.  
-
-
µA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
mA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: R. Jörke  
date of publication : 2000-06-14  
revision: 1  
approved by: Jens Thurau  
FZ800R12KS4, preliminary.xls  
15.06.00  
1 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Transistor / Transistor  
I
C = 800 A, VCC = 600V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
GE = ±15V, RG = 1,3 Ω, Tvj = 25°C  
td,on  
-
-
100  
125  
-
-
ns  
ns  
VGE = ±15V, RG = 1,3 Ω, Tvj = 125°C  
IC = 800 A, VCC = 600V  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
VGE = ±15V, RG = 1,3 Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,3 Ω, Tvj = 125°C  
IC = 800 A, VCC = 600V  
tr  
-
-
90  
-
-
ns  
ns  
100  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
VGE = ±15V, RG = 1,3 Ω, Tvj = 25°C  
VGE = ±15V, RG = 1,3 Ω, Tvj = 125°C  
IC = 800 A, VCC = 600V  
td,off  
-
-
530  
590  
-
-
ns  
ns  
Fallzeit (induktive Last)  
fall time (inductive load)  
VGE = ±15V, RG = 1,3 Ω, Tvj = 25°C  
tf  
-
-
60  
70  
-
-
ns  
ns  
VGE = ±15V, RG = 1,3 Ω, Tvj = 125°C  
IC = 800 A, VCC = 600V, VGE = 15V  
RG = 1,3 Ω, Tvj = 125°C, LS = 60nH  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
-
-
76  
64  
-
-
mWs  
mWs  
I
C = 800 A, VCC = 600V, VGE = 15V  
RG = 1,3 Ω, Tvj = 125°C, LS = 60nH  
P ≤ 10µsec, VGE ≤ 15V  
TVj≤125°C, VCC= 900V, VCEmax=VCES -LsCE ·dI/dt  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
t
Kurzschlußverhalten  
SC Data  
ISC  
-
-
6000  
12  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modul-Leitungswiderstand, Anschlüsse - Chip  
lead resistance, terminals - chip  
RCC’+EE’  
-
t.b.d.  
-
mΩ  
Charakteristische Werte / Characteristic values  
min.  
typ. max.  
Diode / Diode  
IF = 800 A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
IRM  
Qr  
-
-
2,00  
1,70  
-
-
V
V
forward voltage  
IF = 800 A, VGE = 0V, Tvj = 125°C  
IF = 800 A, - diF/dt = 8200 A/µsec  
VR = 600V, VGE = -10V, Tvj = 25°C  
VR = 600V, VGE = -10V, Tvj = 125°C  
IF = 800 A, - diF/dt = 8200 A/µsec  
VR = 600V, VGE = -10V, Tvj = 25°C  
VR = 600V, VGE = -10V, Tvj = 125°C  
IF = 800 A, - diF/dt = 8200 A/µsec  
VR = 600V, VGE = -10V, Tvj = 25°C  
VR = 600V, VGE = -10V, Tvj = 125°C  
Rückstromspitze  
peak reverse recovery current  
-
-
540  
900  
-
-
A
A
Sperrverzögerungsladung  
recovered charge  
-
-
60  
-
-
µAs  
µAs  
160  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
-
-
32  
76  
-
-
mWs  
mWs  
FZ800R12KS4, preliminary.xls  
15.06.00  
2 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Thermische Eigenschaften / Thermal properties  
min.  
typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
-
-
0,018  
0,027  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per module  
λPaste = 1 W/m*K / λgrease = 1 W/m*K  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCK  
-
0,008  
-
K/W  
°C  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
-
-
-
-
150  
125  
150  
Betriebstemperatur  
operation temperature  
Top  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Material Modulgrundplatte  
material of module baseplate  
Cu  
AlN  
Innere Isolation  
internal insulation  
Kriechstrecke  
creepage distance  
32,2  
19,1  
> 400  
mm  
mm  
Luftstrecke  
clearance  
CTI  
comperative tracking index  
M1  
M2  
4,25  
5,75  
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
1,7  
8
2,3  
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
10,00  
Gewicht  
weight  
G
1000  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
FZ800R12KS4, preliminary.xls  
3 (9)  
15.06.00  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
VGE = 15V  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
T = 25°C  
T = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
IC = f (VCE)  
Tvj = 125°C  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
VGE = 8V  
VGE = 9V  
VGE = 10V  
VGE = 12V  
VGE = 15V  
VGE = 20V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
VCE [V]  
FZ800R12KS4, preliminary.xls  
15.06.00  
4 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
I C = f (VGE)  
VCE = 20V  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
T = 25°C  
T = 125°C  
5
6
7
8
9
10  
11  
12  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
IF = f (VF)  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
Tj = 25°C  
Tj = 125°C  
0,0  
0,2  
0,4  
0,6  
0,8  
1,0  
1,2  
1,4  
1,6  
1,8  
2,0  
2,2  
2,4  
2,6  
VF [V]  
FZ800R12KS4, preliminary.xls  
15.06.00  
5 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
RG,on = 1,3 Ω, RG,off = 1,3 Ω, VCE = 600V, Tj = 125°C  
250,0  
200,0  
150,0  
100,0  
50,0  
Eon  
Eoff  
Erec  
0,0  
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 800 A , VCE = 600V , Tj = 125°C  
450  
400  
350  
300  
250  
200  
150  
100  
50  
Eon  
Eoff  
Erec  
0
0
1
2
3
4
5
6
7
8
RG [Ω]  
FZ800R12KS4, preliminary.xls  
15.06.00  
6 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Sicherer Arbeitsbereich IGBT (RBSOA)  
RG,off = 1,3 Ω, Tvj= 125°C  
Reverse bias safe operation area IGBT (RBSOA)  
1800  
1600  
1400  
1200  
1000  
800  
600  
400  
200  
0
IC,Modul  
IC,Chip  
0
200  
400  
600  
800  
1000  
1200  
1400  
VCE [V]  
FZ800R12KS4, preliminary.xls  
15.06.00  
7 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Transienter Wärmewiderstand  
Transient thermal impedance  
Z thJC = f (t)  
0,1  
Zth:IGBT  
Zth:Diode  
0,01  
0,001  
0,0001  
0,001  
0,01  
0,1  
1
10  
t [sec]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
: IGBT  
: Diode  
: Diode  
3,85  
5,68  
0,0493  
8,52  
6,15  
0,0916  
9,22  
2,32  
τi [sec]  
0,0064  
5,78  
1,5237  
3,48  
ri [K/kW]  
τi [sec]  
0,0064  
0,0493  
0,0916  
1,5237  
FZ800R12KS4, preliminary.xls  
15.06.00  
8 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 800 R12 KS4  
Vorläufige Daten  
Preliminary data  
Gehäusemaße / Schaltbild  
Package outline / Circuit diagram  
FZ800R12KS4, preliminary.xls  
15.06.00  
9 (9)  
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