PZT2222A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
75
40
V
6
0.6
V
A
Total Device Dissipation
Junction Temperature
Storage Temperature
PC
1
W
°C
°C
TJ
+150
-55 ~ +150
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
SYMBOL
RATINGS
125
UNIT
°C/W
θJA
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=10μA, IE=0
BVCEO IC=10mA, IB=0
BVEBO IE=10μA, IC=0
75
40
6
V
V
V
ICEO
ICBO
IEBO
IBL
VCE=60V, VEB(OFF)=3.0V
10
0.01
10
nA
VCB=60V, IE=0
Collector Cut-Off Current
μA
VCB=60V,IE=0, TA=150°C
VEB=3.0V, IC=0
Emitter Cut-Off Current
Base Cut-Off Current
10
nA
nA
VCE=60V, VEB(OFF)=3.0V
20
ON CHARACTERISTICS
IC=0.1mA, VCE=10V
35
50
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
75
DC Current Gain
hFE
IC=10mA, VCE=10V, TA=-55°C
IC=150mA, VCE=10V (Note)
IC=150mA, VCE=1.0V (Note)
IC=500mA, VCE=10V (Note)
IC=150mA, IB=15mA
35
100
50
300
40
0.3
1.0
1.2
2.0
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
V
V
IC=500mA, IB=50mA
IC=150mA, IB=15mA
0.6
Base-Emitter Saturation Voltage (Note) VBE(SAT)
IC=500mA, IB=50mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
fT
IC=20mA, VCE=20V, f=100MHz
300
MHz
pF
COBO VCB=10V, IE=0, f=100kHz
CIBO VEB=0.5V, IC=0, f=100kHz
rB'CC IC=20mA, VCB=20V, f=31.8MHz
8.0
25
Input Capacitance
pF
Collector Base Time Constant
150
pS
IC=100μA, VCE=10V, RS=1.0kΩ,
f=1.0kHz
Noise Figure
NF
4.0
60
dB
Real Part of Common-Emitter High
Frequency Input Impedance
RE(HJE) IC=20mA, VCB=20V, f=300MHz
Ω
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R207-001.D
www.unisonic.com.tw
