PZT13003
1.5A , 700V
NPN Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-223
FEATURES
For AF driver and output stages
Power switching applications
A
M
4
CLASSIFICATION OF hFE
Top View
C B
PZT13003-A PZT13003-B PZT13003-C
Product-Rank
Range
1
2
3
8~20 15~30 25~40
K
F
L
E
D
PACKAGE INFORMATION
G
H
J
Package
MPQ
Leader Size
13 inch
Millimeter
Millimeter
REF.
REF.
SOT-223
2.5K
Min.
6.20
6.70
3.30
1.42
4.50
0.60
Max.
6.70
7.30
3.70
1.90
4.70
0.82
Min.
Max.
0.10
-
0.35
-
A
B
C
D
E
F
G
H
J
K
L
-
-
0.25
-
2.30 REF.
M
2.90
3.10
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
Collector-Base Voltage
700
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
450
9
1.5
V
Collector Current -Continuous
Collector Power Dissipation
Junction, Storage Temperature
A
PD
1.25
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter-Base Cutoff Current
DC current gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
700
450
9
Max.
Unit
V
Test Conditions
IC=1mA , IE=0
V
IC=10mA, IB=0
IE=1mA, IC=0
V
0.1
0.05
40
1
mA
mA
VCB=700V, IE=0
VEB=9V, IC=0
IEBO
hFE
8
VCE=10V, IC=0.5A
IC=1A, IB=250mA
IC=1A, IB=250mA
Collector-emitter saturation voltage1
VCE(sat)
VBE(on)
T(on)
V
V
Base-emitter voltage
1.2
1
ON-Time
μS
μS
μS
MHz
V
CE=10V, IC=2A
IB1=IB2=400mA
Storage time
tS
4
Fall time
tf
0.7
Transition frequency
fT
4
VCE=10V, IC=500mA, f=1.0MHZ
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2012 Rev. A
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