PZT159
PNP Silicon Planar
Elektronische Bauelemente
High Current Transistor
RoHS Compliant Product
Features
* 5 Amps continuous current, up to 15 Amp peak current.
* Excellent gain characteristic specified up to 10Amps.
* Very low saturation voltage
SOT-223
ꢂ ꢁ ꢃ ꢃ f ꢃ ꢁ ꢄ ꢃ
R0.15
R0.15
ꢇ ꢁ ꢂ ꢃ
0.25
12°±1°
Mechanical Data
C
12°±1°
ꢃ ꢁ ꢈ ꢄ
ꢀ ꢁ ꢂ ꢃ f ꢃ ꢁ ꢄ ꢃ
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 159
1.6±0.2
E
6°±3°
1
2
3
C
B
1. BASE
2. COLLECTOR
3. EMITTER
Maximum Ratings and Thermal Characteristics
(TA = 25OC unless otherwise noted)
Parameter
Symbol
Value
+150
Unit
OC
-
Junction Temperature
Storage Temperature
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
T
j
O C
Tstg
VCBO
VCEO
VEBO
IC
-55 to +150
V
-
100
-60
-6
V
V
A
A
W
-5
C
I
-15
3.0
PD
w
Total Po er Dissipation
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25OC unless otherwise noted)
Typ.
Parameter
Symbol
Min
Max
Uni Test Conditions
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
BVCBO
-100
-
-
V
V
Collector-Emitter Breakdown Voltage
IC=-1µA, RB=1KΩ
BVCER
-100
-
-
(w/ Real Device Limit)
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
*BVCEO
BVEBO
ICBO
-60
-6
-
-
-
-
-
-
V
V
IC=-100mA, IB=0
IE=-100µA, IC=0
-50
nA VCB=-80V, IE=0
VCB=-80V, R=1KΩ
nA
Collector-Base Cutoff Current
ICER
-
-
-50
(w/ Real Device Limit)
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector Saturation Voltage 3
Collector Saturation Voltage 4
Base Saturation Voltage
Base-Emitter Voltage
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
-
-
-10
-50
nA VEB=-6V, IC=0
-
-20
mV IC=-100mA, IB=-10mA
-
-85
-140 mV IC=-1A, IB=-100mA
-210 mV IC=-2A, IB=-200mA
-460 mV IC=-5A, IB=-500mA
-
-
-155
-370
-
-1.08 -1.24
-0.935 -1.07
V
V
IC=-5A, IB=-500mA
VCE=-1V, IC=-5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
-
DC Current Gain 1
100
100
75
10
-
200
200
90
-
DC Current Gain 2
*hFE2
300
DC Current Gain 3
*hFE3
-
-
-
-
DC Current Gain 4
*hFE4
25
Gain-Bandwidth Product
Output Capacitance
fT
120
74
MH VCE=-10V, IC=-100mA,
pF VCB=-10V, IE=0, f=1MHz
Cob
-
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
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