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PZT157

型号:

PZT157

描述:

PNP晶体管的硅平面高性能晶体管[ PNP Transistor Silicon Planar High Performance Transistor ]

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

2 页

PDF大小:

777 K

PZT157  
PNP Transistor  
Elektronische Bauelemente  
Silicon Planar High Performance Transistor  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-223  
Description  
The PZT157 is designed for general  
purpose switching and amplifier  
applications.  
Features  
* 3 Amps Continous Current  
Millimeter  
Min. Max.  
13̓TYP.  
Millimeter  
* -60 Volt VCEO  
REF.  
REF.  
Min.  
6.70  
2.90  
0.02  
0̓  
Max.  
7.30  
3.10  
0.10  
10̓  
A
C
D
E
I
B
J
* Low Saturation Voltages  
2.30 REF.  
1 5 7  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
Date Code  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)  
Symbol  
Parameter  
Value  
-80  
-60  
-5  
Units  
VCBO  
Collector-Base Voltage  
V
V
V
VCEO  
VEBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
-3  
A
IC  
-6  
W
2
Total Power Dissipation  
PD  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
*BVCEO  
BVEBO  
ICBO  
Min  
-80  
-60  
Max  
Test Conditions  
IC=-100µA, IE=0  
IC=-10mA, IB=0  
IE=-100µA, IC=0  
VCB=-60V, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-
-
-
-
-
-
-
-
V
V
-5  
-
-100  
-100  
nA  
nA  
Emitter-Base Cutoff Current  
-
IEBO  
VEB=-  
C=0  
4V,I  
-150  
-300  
-600  
-1.25  
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)  
*VBE(on)  
*hFE1  
-
-
IC=-1A,IB=-100mA  
IC=-3A,IB=-300mA  
IC=-1A,IB=-100mA  
IC=-1A,VCE=-2V  
Collector Saturation Voltage  
mV  
-450  
-0.9  
-0.8  
200  
200  
Base Saturation Voltage  
Base-Emitter Voltage  
-
V
V
-
-1.0  
-
70  
100  
80  
VCE=-2V, IC=-50mA  
*hFE2  
300  
VCE=-2V, IC=-500mA  
VCE=- 2V, IC=-1A  
DC Current Gain  
*hFE3  
-
-
170  
150  
140  
-
*hFE4  
40  
100  
-
VCE=- 2V, IC=-2A  
Gain-Bandwidth Product  
Output Capacitance  
-
fT  
MH  
VCE=- 5V, IC=-100mA  
z
, f=100MHz  
30  
-
pF  
Cob  
Ton  
Toff  
VCB=-10V, f=1MHz  
-
-
On-Time  
Off-Time  
40  
nS  
VCC=-10V,IC=-  
500mA  
,IB1=IB2=- mA  
5
0
-
450  
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%  
µ
Spice parameter data is available upon request for this device.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
PZT157  
PNP Transistor  
Elektronische Bauelemente  
Silicon Planar High Performance Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 2  
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