PZT195
PNP Silicon Planar
Elektronische Bauelemente
Medium Power Transistor
RoHS Compliant Product
Features
* -60 Voltage VCEO.
SOT-223
* 1 Amps continuous current.
* Complementary to PZT194
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Mechanical Data
C
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ꢃ ꢁ ꢈ ꢄ
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Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 195
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1
2
3
C
B
1. BASE
2. COLLECTOR
3. EMITTER
Maximum Ratings and Thermal Characteristics
O
(TA = 25 C unless otherwise noted)
Parameter
Symbol
Value
Unit
OC
-
Junction Temperature
Storage Temperature
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
T
+150
j
O C
Tstg
VCBO
VCEO
VEBO
IC
-55 to +150
V
-80
-60
-5
V
V
-1
A
C
I
A
-0.2
2.0
PD
W
w
Total Po er Dissipation
Notes: Device on alumina substrate.
s
(TJ = 25OC unless otherwise noted)
Electrical Characteristic
Parameter
Symbol Min Typ. Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
*BVCEO
BVEBO
ICBO
-80
-60
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
nA
V
V
V
V
-
IC=-100uA, IE=0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emmiter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
IC=-10mA, IB=0
-
IE=-100uA, IC=0
VCB=-60V, IE=0
VCES=-60V
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
-
ICES
-
IEBO
-
VEB=-4V, IC=0
Collector Saturation Voltage 1
Collector Saturation Voltage 2
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
-
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=1mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-2A
-
-
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
-
100
100
80
15
150
-
300
-
-
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
-
-
-
-
MHz VCE=-10V, IC=-50mA, f=100MHz
pF VCB=-10V, IE=0, f=1MHz
Cob
10
Output Capacitance
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
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