PZT4033
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PD
RATING
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Power Dissipation
-80
-80
V
-5
V
2
W
A
Collector Current
IC
-1
Junction Temperature
Storage Temperature
TJ
-65 ~ +150
-65 ~ +150
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
62.5
UNIT
Junction to Ambient
θJA
°C /W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=-10μA,IE=0
BVCEO IC=-10mA,IB=0
BVEBO IE=-10μA,IC=0
-80
-80
-5
V
V
V
ICBO
IEBO
VCB=-60V, IE=0
VEB=-5V, IC=0
-50
-10
nA
nA
Emitter Cut-off Current
V
CE=-5V, IC=-0.1mA
75
100
70
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
300
DC Current Gain
hFE
25
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE= -10V, IC= -50mA, f=1MHz
VCB=-10V, IE=0, f=1MHz
VEB=-0.5V, IC=0, f=1MHz
-0.15
-0.5
-0.9
-1.1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
V
V
Gain Bandwidth Product
Output Capacitance
Input Capacitance
Turn-on Time
f
100
MHz
pF
pF
ns
COB
CIB
tON
tSTG
tF
20
110
100
350
50
IC=-500mA, VCE= -30V,
IB1=- IB2=-50mA
Switching Time
ns
Storage Time
Fall Time
ns
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R207-002,C
www.unisonic.com.tw
