PZTA92/93
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
-300
UNIT
V
PZTA92
PZTA93
PZTA92
PZTA93
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-200
V
-300
V
VCEO
-200
V
Emitter-Base Voltage
Collector Current
VEBO
IC
-5
V
-500
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Pc
1
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
-300
-200
-300
-200
-5
TYP
MAX UNIT
PZTA92
PZTA93
PZTA92
PZTA93
V
V
V
V
V
BVCBO IC=-100μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC =-1mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVEBO IE=-100μA, IC =0
VCB=-200V, IE=0
ICBO
PZTA92
PZTA93
-0.25
-0.25
-0.10
μA
μA
μA
VCB=-160V, IE=0
IEBO
hFE
VEB=-3V, IC =0
CE=-10V, IC =-1mA
V
60
80
80
DC Current Gain (Note)
VCE=-10V, IC =-10mA
VCE=-10V, IC =-30mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCE(SAT) IC =-20mA, IB=-2mA
VBE(SAT) IC =-20mA, IB=-2mA
-0.5
V
V
-0.90
fT
VCE=-20V,Ic=-10mA, f=100MHz
50
MHz
pF
PZTA92
VCB=-20V, IE=0, f=1MHz
PZTA93
6
8
Collector Base Capacitance
CCB
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%, VCE (SAT) <200mV (Class SIN)
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R207-006.D
www.unisonic.com.tw
