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PZTA92T1

型号:

PZTA92T1

描述:

PNP硅高压晶体管表面贴装[ PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT ]

品牌:

MOTOROLA[ MOTOROLA ]

页数:

4 页

PDF大小:

64 K

Order this document  
by PZTA92T1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR 2,4  
Motorola Preferred Device  
BASE  
1
SOT–223 PACKAGE  
PNP SILICON  
HIGH VOLTAGE TRANSISTOR  
SURFACE MOUNT  
EMITTER 3  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
300  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
Vdc  
mAdc  
Watts  
°C  
4
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
–300  
5.0  
1
2
3
I
C
500  
(1)  
Total Power Dissipation up to T = 25°C  
P
D
1.5  
A
CASE 318E–04, STYLE 1  
TO–261AA  
Storage Temperature Range  
Junction Temperature  
DEVICE MARKING  
P2D  
T
stg  
65 to +150  
150  
T
J
°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Thermal Resistance from Junction to Ambient  
R
83.3  
°C/W  
θJA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)  
V
V
300  
300  
5.0  
Vdc  
Vdc  
C
B
(BR)CEO  
Collector–Base Breakdown Voltage (I = –100 µAdc, I = 0)  
C
E
(BR)CBO  
Emitter–Base Breakdown Voltage (I = –100 µAdc, I = 0)  
V
(BR)EBO  
Vdc  
E
C
Collector–Base Cutoff Current (V  
= 200 Vdc, I = 0)  
I
CBO  
0.25  
0.1  
µAdc  
µAdc  
CB  
E
Emitter–Base Cutoff Current (V  
= 3.0 Vdc, I = 0)  
I
EBO  
BE  
C
ON CHARACTERISTICS  
(2)  
DC Current Gain  
(I = 1.0 mAdc, V  
h
FE  
= 10 Vdc)  
CE  
25  
40  
25  
C
(I = –10 mAdc, V  
(I = 30 mAdc, V  
= 10 Vdc)  
= 10 Vdc)  
C
CE  
C
CE  
Saturation Voltages  
Vdc  
(I = –20 mAdc, I = –2.0 mAdc)  
V
0.5  
0.9  
C
B
CE(sat)  
V
BE(sat)  
(I = –20 mAdc, I = –2.0 mAdc)  
C
B
DYNAMIC CHARACTERISTICS  
Collector–Base Capacitance @ f = 1.0 MHz (V  
Current–Gain — Bandwidth Product  
= –20 Vdc, I = 0)  
C
f
6.0  
pF  
CB  
E
cb  
50  
MHz  
T
(I = –10 mAdc, V  
= 20 Vdc, f = 100 MHz)  
CE  
C
2
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in .  
2. Pulse Test: Pulse Width 300 µs; Duty Cycle = 2.0%.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1997  
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE  
POWER DISSIPATION  
The power dissipation of the SOT–223 is a function of the  
pad size. These can vary from the minimum pad size for  
soldering to the pad size given for maximum power  
dissipation. Power dissipation for a surface mount device is  
the equation for an ambient temperature T of 25°C, one can  
calculate the power dissipation of the device which in this  
case is 1.5 watts.  
A
150°C – 25°C  
83.3°C/W  
determinedby T  
ture of the die, R  
θJA  
junction to ambient; and the operating temperature, T .  
A
Using the values provided on the data sheet for the  
, themaximumratedjunctiontempera-  
, the thermal resistance from the device  
P
=
= 1.5 watts  
J(max)  
D
The 83.3°C/W for the SOT–223 package assumes the  
recommended collector pad area of 965 sq. mils on a glass  
epoxy printed circuit board to achieve a power dissipation of  
1.5 watts. If space is at a premium, a more realistic  
SOT–223 package, P can be calculated as follows.  
D
T
– T  
A
J(max)  
P
=
approach is to use the device at a P of 833 mW using the  
D
D
R
θJA  
footprint shown. Using a board material such as Thermal  
Clad, a power dissipation of 1.6 watts can be achieved using  
the same footprint.  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values into  
MOUNTING PRECAUTIONS  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within a  
short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
The soldering temperature and time should not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient should be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and result  
in latent failure due to mechanical stress.  
Always preheat the device.  
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
Mechanical stress or shock should not be applied during  
cooling  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering method,  
the difference should be a maximum of 10°C.  
* Soldering a device without preheating can cause excessive  
thermal shock and stress which can result in damage to the  
device.  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the total  
design. The footprint for the semiconductor packages must  
be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.15  
3.8  
0.079  
2.0  
0.248  
6.3  
0.091  
2.3  
0.091  
2.3  
0.079  
2.0  
inches  
mm  
0.059  
1.5  
0.059  
1.5  
0.059  
1.5  
SOT–223  
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
PACKAGE DIMENSIONS  
A
F
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
4
2
INCHES  
MILLIMETERS  
S
B
DIM  
A
B
C
D
F
G
H
J
K
L
M
S
MIN  
MAX  
0.263  
0.145  
0.068  
0.035  
0.126  
0.094  
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
0.020  
0.24  
1.50  
0.85  
0
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
0.100  
0.35  
2.00  
1.05  
10  
1
3
0.249  
0.130  
0.060  
0.024  
0.115  
0.087  
D
L
0.0008 0.0040  
G
0.009  
0.060  
0.033  
0
0.014  
0.078  
0.041  
10  
J
C
0.08 (0003)  
0.264  
0.287  
6.70  
7.30  
M
H
K
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
CASE 318E–04  
ISSUE H  
TO–261AA  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
3
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and  
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola  
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,includingTypicals”  
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of  
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other  
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury  
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
Motorola was negligent regarding the design or manufacture of the part. Motorola and  
Opportunity/Affirmative Action Employer.  
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal  
Mfax is a trademark of Motorola, Inc.  
How to reach us:  
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;  
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447  
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,  
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488  
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609  
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,  
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298  
INTERNET: http://motorola.com/sps  
PZTA92T1/D  
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