Discr ete P OWER & Sign a l
Tech n ologies
MPSA65
MMBTA65
PZTA65
C
C
E
E
C
B
TO-92
C
B
SOT-23
Mark: 2W
B
SOT-223
E
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCES
VCBO
VEBO
IC
Collector-Emitter Voltage
30
V
V
V
A
Collector-Base Voltage
30
10
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.2
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA65
*MMBTA65
**PZTA65
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
350
2.8
1,000
8.0
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
A65, Rev A
1997 Fairchild Semiconductor Corporation
