PZTA 63
PZTA 64
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CES
(BR)CB0
(BR)EB0
30
30
10
–
–
–
–
–
–
V
IC
= 100 µA
Collector-base breakdown voltage
= 100 µA, I = 0
Emitter-base breakdown voltage
= 10 µA, I = 0
Collector-base cutoff current
IC
B
IE
C
I
CB0
EB0
V
CE = 30 V, I
E
= 0
–
–
–
–
100
10
nA
µA
V
CE = 30 V, I
E
= 0, T
A
= 150 ˚C
Emitter-base cutoff current
= 0
I
–
–
100
nA
–
VEB = 10 V, I
C
DC current gain
h
FE
I
C
C
= 10 mA, VCE = 5 V
PZTA 63
PZTA 64
PZTA 63
PZTA 64
5000
–
–
–
–
–
10000 –
10000 –
20000 –
I
= 100 mA, VCE = 5 V
Collector-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
CEsat
BEsat
–
–
1.5
V
IC
B
Base-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
–
–
2.0
IC
B
AC characteristics
Transition frequency
fT
125
–
–
MHz
IC
= 50 mA, VCE = 5 V, f = 100 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
