SMD Type
Transistors
High Voltage Transistor
PZTA96S
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
+0.2
0.90
-0.2
+0.1
3.00
-0.1
PNP Silicon
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Rating
-450
Unit
V
-450
V
-5
V
-500
mA
PD
1.5
Watts
Total Power Dissipation Up to TA = 25
Storage Temperature Range
Junction Temperature
*
Tstg
-65 to +150
150
TJ
Thermal Resistance from Junction to Ambient *
RèJA
83.3
* Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Testconditons
IC = -1.0 mA, IB = 0
Min
-450
-450
-5.0
Typ
Max
Unit
V
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
DC Current Gain*
IC = -100 ìA,IE = 0
V
IE = -10ìA, IC = 0
V
VCB = -400 V, IE = 0
VBE = -4.0 V, IC = 0
-0.1
-0.1
150
-0.6
-1.0
ìA
ìA
IEBO
hFE
IC = -10 mA, VCE =-10 V
IC = -20 mA, IB =-2.0 mA
IC = -20 mA, IB = -2.0 mA
50
VCE(sat)
VBE(sat)
V
V
Saturation Voltages
* Pulse Test: Pulse Width
300 ìs; Duty Cycle = 2.0%.
Marking
Marking
ZTA96
1
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