PZT772
PNP Silicon Epitaxial Transistor
COLLECTOR
2, 4
4
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
BASE
1
1
2
4. COLLECTOR
3
3
SOT-223
EMITTER
ABSOLUTE MAXIMUM RATINGS
Rating
(T =25 C)
A
Symbol
Value
Unit
V
Collector to Base Voltage
CBO
-40
V
V
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
-30
CEO
V
V
V
EBO
-5.0
I
C
A
-3.0
1.5
Total Device Disspation T =25°C
P
W
A
D
Junction Temperature
Storage Temperature
Tj
+150
˚C
˚C
-55 to +150
Tstg
Device Marking
PZT772 = 772
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
BV
Min
Max
Max
Unit
Collector-Base Breakdown Voltage
-40
-
-
V
V
CBO
I =-100µA, I =0
C
E
Collector-Emitter Breakdown Voltage
I =-10mA, I =0
BV
BV
-30
-
-
CEO
C
B
Emitter-Base Breakdown Voltage
I =-10µA, I =0
-5.0
-
-
-
-
V
EBO
E
C
Collector Cut-Off Current
=-30V, I =0
I
-1.0
µA
CBO
V
CB
E
Emitter-Cut-Off Current
I
-
-
-1.0
µA
EBO
V =-3V, I =0
EB
C
WEITRON
http://www.weitron.com.tw
1/4
07-Feb-07
