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PZT751T1G_10

型号:

PZT751T1G_10

描述:

PNP硅平面外延型晶体管[ PNP Silicon Planar Epitaxial Transistor ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

123 K

PZT751T1G  
PNP Silicon Planar  
Epitaxial Transistor  
This PNP Silicon Epitaxial transistor is designed for use in  
industrial and consumer applications. The device is housed in the  
SOT--223 package which is designed for medium power surface  
mount applications.  
http://onsemi.com  
Features  
High Current: 2.0 A  
The SOT--223 Package can be soldered using wave or reflow.  
SOT--223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die  
SOT--223 PACKAGE  
HIGH CURRENT  
PNP SILICON TRANSISTOR  
SURFACE MOUNT  
COLLECTOR 2, 4  
NPN Complement is PZT651T1  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
BASE  
1
Compliant  
EMITTER 3  
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
C
Rating  
Collector--Emitter Voltage  
Collector--Base Voltage  
Emitter--Base Voltage  
Collector Current  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING  
DIAGRAM  
V
CEO  
V
CBO  
V
EBO  
80  
5.0  
2.0  
AYW  
SOT--223  
ZT751G  
CASE 318E  
G
I
C
STYLE 1  
1
Total Power Dissipation  
P
W
mW/C  
D
@ T = 25C (Note 1)  
0.8  
6.4  
A
Derate above 25C  
A
Y
W
G
= Assembly Location  
= Year  
Storage Temperature Range  
Junction Temperature  
THERMAL CHARACTERISTICS  
Rating  
T
stg  
-- 65 to 150  
150  
C  
C  
= Work Week  
T
J
= Pb--Free Package  
(Note: Microdot may be in either location)  
Symbol  
Value  
Unit  
Thermal Resistance from Junction--to--  
Ambient in Free Air  
R
θ
156  
C/W  
JA  
ORDERING INFORMATION  
Device  
Package  
Shipping  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
L
260  
10  
C  
PZT751T1G  
SOT--223  
(Pb--Free)  
1000 / Tape & Reel  
Sec  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum  
recommended footprint.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 -- Rev. 6  
PZT751T1/D  
PZT751T1G  
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)  
Characteristics  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector--Emitter Breakdown Voltage  
V
60  
80  
5.0  
--  
--  
--  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 10 mAdc, I = 0)  
C
B
Collector--Emitter Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
C
E
Emitter--Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
--  
Vdc  
E
C
Base--Emitter Cutoff Current  
(V = 4.0 Vdc)  
EB  
I
0.1  
100  
mAdc  
nAdc  
EBO  
CBO  
Collector--Base Cutoff Current  
I
--  
(V = 80 Vdc, I = 0)  
CB  
E
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
C
h
--  
FE  
(I = 50 mAdc, V = 2.0 Vdc)  
75  
75  
75  
40  
--  
--  
--  
--  
CE  
(I = 500 mAdc, V = 2.0 Vdc)  
C
CE  
(I = 1.0 Adc, V = 2.0 Vdc)  
C
CE  
(I = 2.0 Adc, V = 2.0 Vdc)  
C
CE  
Collector--Emitter Saturation Voltages  
(I = 2.0 Adc, I = 200 mAdc)  
V
Vdc  
CE(sat)  
--  
--  
0.5  
0.3  
C
B
(I = 1.0 Adc, I = 100 mAdc)  
C
B
Base--Emitter Voltages  
(I = 1.0 Adc, V = 2.0 Vdc)  
V
--  
1.0  
1.2  
--  
Vdc  
Vdc  
MHz  
BE(on)  
C
CE  
Base--Emitter Saturation Voltage  
(I = 1.0 Adc, I = 100 mAdc)  
V
--  
BE(sat)  
C
B
Current--Gain--Bandwidth  
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)  
f
75  
T
C
CE  
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.  
http://onsemi.com  
2
PZT751T1G  
NPN  
PNP  
300  
270  
250  
T = 125C  
J
225  
200  
175  
150  
125  
100  
75  
V
= --2.0 V  
CE  
V
= 2.0 V  
CE  
T = 125C  
J
240  
210  
25C  
180  
150  
120  
90  
25C  
-- 5 5 C  
-- 5 5 C  
60  
50  
30  
25  
0
0
10  
20  
50 100 200  
I , COLLECTOR CURRENT (mA)  
C
500 1.0 A 2.0 A 4.0 A  
--10 -- 20  
-- 50 --100 -- 200 -- 500 -- 1 . 0 A -- 2 . 0 A -- 4 . 0 A  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. Typical DC Current Gain  
NPN  
Figure 2. Typical DC Current Gain  
PNP  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
-- 2 . 0  
-- 1 . 8  
-- 1 . 6  
-- 1 . 4  
-- 1 . 2  
-- 1 . 0  
-- 0 . 8  
-- 0 . 6  
-- 0 . 4  
-- 0 . 2  
0
V
@ I /I = 10  
C B  
BE(sat)  
V
@ I /I = 10  
C B  
BE(sat)  
V
@ V = 2.0 V  
CE  
BE(on)  
V
@ V = 2.0 V  
CE  
BE(on)  
V
@ I /I = 10  
CE(sat)  
C B  
V
@ I /I = 10  
C B  
CE(sat)  
50  
100  
200  
500  
1.0 A  
2.0 A  
4.0 A  
-- 5 0  
--100  
--200  
--500 --1.0 A  
--2.0 A --4.0 A  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 3. On Voltages  
NPN  
Figure 4. On Voltages  
PNP  
1.0  
0.9  
0.8  
0.7  
-- 1 . 0  
-- 0 . 9  
-- 0 . 8  
-- 0 . 7  
T = 25C  
J
T = 25C  
J
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
-- 0 . 6  
-- 0 . 5  
-- 0 . 4  
-- 0 . 3  
-- 0 . 2  
-- 0 . 1  
0
I
= 10 mA  
I
= 100 mA  
I
= 500 mA  
I
= 2.0 A  
I
= --500 mA  
I = --2.0 A  
C
C
C
C
C
C
I
C
= --10 mA  
I
C
= --100 mA  
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20  
I , BASE CURRENT (mA)  
50 100 200 500  
--0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100--200 --500  
I , BASE CURRENT (mA)  
B
B
Figure 5. Collector Saturation Region  
Figure 6. Collector Saturation Region  
http://onsemi.com  
3
PZT751T1G  
PACKAGE DIMENSIONS  
SOT--223 (TO--261)  
CASE 318E--04  
ISSUE N  
D
b1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,  
1994.  
2. CONTROLLING DIMENSION: INCH.  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
-- -- --  
4
2
DIM  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
0 . 2 0  
1.50  
6.70  
0  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
-- -- --  
MAX  
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
-- -- --  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0 . 0 0 8  
0.060  
0.264  
0  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
-- -- --  
H
E
E
A
A1  
b
b1  
c
D
E
1
3
b
e1  
e
e
e1  
L
L1  
1.75  
7.00  
--  
2.00  
7.30  
10  
0.069  
0.276  
--  
0.078  
0.287  
10  
C
θ
H
E
A
θ
0.08 (0003)  
STYLE 1:  
A1  
PIN 1. BASE  
L
L1  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
SCALE 6:1  
*For additional information on our Pb--Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800--282--9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81--3--5773--3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada  
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
PZT751T1/D  
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