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PZT3906T1

型号：

PZT3906T1

描述：

通用晶体管PNP硅[ General Purpose Transistor PNP Silicon ]

品牌：

ONSEMI[ ONSEMI ]

页数：

7 页

PDF大小：

177 K

下载PDF手册
PZT3906T1  
Preferred Device  
General Purpose Transistor  
PNP Silicon  
Features  
• Pb−Free Package is Available  
http://onsemi.com  
MAXIMUM RATINGS  
COLLECTOR  
2, 4  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol Value  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
−40  
−40  
1
Vdc  
BASE  
−5.0  
−200  
Vdc  
3
Collector Current − Continuous  
I
C
mAdc  
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING  
DIAGRAM  
Total Device Dissipation (Note 1)  
T = 25°C  
A
P
D
1.5  
12  
W
mW/°C  
Thermal Resistance Junction−to−Ambient  
R
83.3  
°C/W  
q
JA  
JA  
(Note 1)  
AYW  
2A G  
G
Thermal Resistance Junction−to−Lead #4  
R
35  
°C/W  
°C  
q
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
stg  
1
2A  
A
Y
W
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. FR−4 with 1 oz and 713 mm of copper area.  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
PZT3906T1  
PZT3906T1G  
SOT−223  
1000 / Tape & Reel  
1000 / Tape & Reel  
SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
PZT3906T1/D  
PZT3906T1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Collector−Emitter Breakdown Voltage (Note 2)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = −1.0 mAdc, I = 0)  
−40  
−40  
−5.0  
−
−
−
C
B
Collector−Base Breakdown Voltage  
(I = −10 mAdc, I = 0)  
V
V
C
E
Emitter−Base Breakdown Voltage  
(I = −10 mAdc, I = 0)  
−
E
C
Base Cutoff Current  
(V = −30 Vdc, V = −3.0 Vdc)  
I
BL  
nAdc  
−50  
−50  
CE  
EB  
Collector Cutoff Current  
(V = −30 Vdc, V = −3.0 Vdc)  
I
CEX  
−
CE  
EB  
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
H
−
FE  
(I = −0.1 mAdc, V = −1.0 Vdc)  
60  
80  
100  
60  
30  
−
−
300  
−
−
C
CE  
(I = −1.0 mAdc, V = −1.0 Vdc)  
C
CE  
CE  
CE  
CE  
(I = −10 mAdc, V = −1.0 Vdc)  
C
(I = −50 mAdc, V = −1.0 Vdc)  
C
(I = −100 mAdc, V = −1.0 Vdc)  
C
Collector−Emitter Saturation Voltage  
(I = −10 mAdc, I = −1.0 mAdc)  
V
Vdc  
CE(sat)  
−
−
−0.25  
−0.4  
C
B
(I = −50 mAdc, I = −5.0 mAdc)  
C
B
Base−Emitter Saturation Voltage  
(I = −10 mAdc, I = −1.0 mAdc)  
V
BE(sat)  
−0.65  
−
−0.85  
−0.95  
C
B
(I = −50 mAdc, I = −5.0 mAdc)  
C
B
SMALL−SIGNAL CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
MHz  
pF  
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)  
250  
−
−
C
CE  
Output Capacitance  
C
obo  
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)  
4.5  
10  
CB  
E
Input Capacitance  
C
ibo  
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)  
−
EB  
C
Input Impedance  
h
kW  
ie  
re  
fe  
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)  
2.0  
0.1  
100  
3.0  
−
12  
C
CE  
−4  
Voltage Feedback Ratio  
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)  
h
h
X 10  
−
10  
C
CE  
Small−Signal Current Gain  
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)  
400  
60  
C
CE  
Output Admittance  
h
oe  
mmhos  
dB  
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)  
C
CE  
Noise Figure  
NF  
(I = −100 mAdc, V = −5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)  
4.0  
C
CE  
S
SWITCHING CHARACTERISTICS  
Delay Time  
t
t
−
−
−
−
35  
35  
d
(V = −3.0 Vdc, V = 0.5 Vdc,  
CC  
BE  
I
= −10 mAdc, I = −1.0 mAdc)  
C
B1  
Rise Time  
t
r
ns  
Storage Time  
225  
75  
s
(V = −3.0 Vdc, I = −10 mAdc,  
CC  
C
I
B1  
= I = −1.0 mAdc)  
B2  
Fall Time  
t
f
2. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.  
http://onsemi.com  
2
PZT3906T1  
3 V  
3 V  
< 1 ns  
+9.1 V  
275  
275  
< 1 ns  
+0.5 V  
10 k  
10 k  
0
C < 4 pF*  
S
C < 4 pF*  
S
1N916  
10.6 V  
300 ns  
10 < t < 500 ms  
1
t
1
10.9 V  
DUTY CYCLE = 2%  
DUTY CYCLE = 2%  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time  
Equivalent Test Circuit  
Figure 2. Storage and Fall Time  
Equivalent Test Circuit  
http://onsemi.com  
3
PZT3906T1  
TYPICAL TRANSIENT CHARACTERISTICS  
T = 25°C  
J
T = 125°C  
J
10  
5000  
V
CC  
I /I = 10  
= 40 V  
3000  
2000  
7.0  
C B  
C
5.0  
obo  
1000  
700  
C
ibo  
500  
3.0  
2.0  
300  
200  
Q
T
Q
A
100  
70  
1.0  
0.1  
50  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
REVERSE BIAS (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Capacitance  
Figure 4. Charge Data  
500  
500  
I /I = 10  
C B  
V
= 40 V  
CC  
300  
200  
300  
200  
I = I  
B1 B2  
I /I = 20  
C B  
100  
70  
100  
70  
t @ V = 3.0 V  
r CC  
50  
50  
15 V  
30  
20  
30  
20  
I /I = 10  
C B  
40 V  
10  
10  
2.0 V  
7
5
7
5
t @ V = 0 V  
OB  
d
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50  
70 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 6. Fall Time  
Figure 5. Turn−On Time  
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)  
5.0  
4.0  
3.0  
2.0  
1.0  
0
12  
SOURCE RESISTANCE = 200 W  
I = 1.0 mA  
f = 1.0 kHz  
I = 1.0 mA  
C
C
10  
8
I = 0.5 mA  
C
SOURCE RESISTANCE = 200 W  
I = 0.5 mA  
C
SOURCE RESISTANCE = 2.0 k  
I = 50 mA  
6
C
4
I = 50 mA  
C
SOURCE RESISTANCE = 2.0 k  
I = 100 mA  
I = 100 mA  
C
2
C
0
0.1 0.2  
0.4  
1.0 2.0 4.0  
10  
20  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R , SOURCE RESISTANCE (k OHMS)  
g
Figure 7.  
Figure 8.  
http://onsemi.com  
4
PZT3906T1  
h PARAMETERS  
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)  
300  
200  
100  
70  
50  
30  
20  
100  
70  
10  
7
50  
30  
5
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 9. Current Gain  
Figure 10. Output Admittance  
20  
10  
10  
7.0  
5.0  
7.0  
5.0  
3.0  
2.0  
3.0  
2.0  
1.0  
0.7  
0.5  
1.0  
0.7  
0.5  
0.3  
0.2  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Input Impedance  
Figure 12. Voltage Feedback Ratio  
http://onsemi.com  
5
PZT3906T1  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T = +125°C  
J
V
CE  
= 1.0 V  
+25°C  
−ꢀ55°C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0 7.0 10  
20  
30  
50  
70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
Figure 13. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
T = 25°C  
J
I = 1.0 mA  
C
10 mA  
30 mA  
100 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT (mA)  
B
Figure 14. Collector Saturation Region  
1.0  
0.8  
0.6  
1.0  
T = 25°C  
J
V
@ I /I = 10  
BE(sat) C B  
0.5  
0
+25°C TO +125°C  
−ꢀ55°C TO +25°C  
q
FOR V  
CE(sat)  
VC  
V
BE  
@ V = 1.0 V  
CE  
−ꢀ0.5  
−ꢀ1.0  
+25°C TO +125°C  
−ꢀ55°C TO +25°C  
0.4  
0.2  
0
V
@ I /I = 10  
C B  
CE(sat)  
q
FOR V  
BE(sat)  
VB  
−ꢀ1.5  
−ꢀ2.0  
1.0  
2.0 5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80 100 120 140 160 180 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 15. “ON” Voltages  
Figure 16. Temperature Coefficients  
http://onsemi.com  
6
PZT3906T1  
PACKAGE DIMENSIONS  
SOT−223 (TO−261)  
CASE 318E−04  
ISSUE L  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
b1  
MILLIMETERS  
INCHES  
NOM  
0.064  
0.002  
0.030  
0.121  
0.012  
0.256  
0.138  
0.091  
0.037  
0.069  
0.276  
−
4
2
DIM  
A
A1  
b
b1  
c
D
E
e
e1  
L1  
MIN  
1.50  
0.02  
0.60  
2.90  
0.24  
6.30  
3.30  
2.20  
0.85  
1.50  
6.70  
0°  
NOM  
1.63  
0.06  
0.75  
3.06  
0.29  
6.50  
3.50  
2.30  
0.94  
1.75  
7.00  
−
MAX  
1.75  
0.10  
0.89  
3.20  
0.35  
6.70  
3.70  
2.40  
1.05  
2.00  
7.30  
10°  
MIN  
0.060  
0.001  
0.024  
0.115  
0.009  
0.249  
0.130  
0.087  
0.033  
0.060  
0.264  
0°  
MAX  
0.068  
0.004  
0.035  
0.126  
0.014  
0.263  
0.145  
0.094  
0.041  
0.078  
0.287  
10°  
H
E
E
1
3
b
e1  
e
H
E
C
q
q
A
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
0.08 (0003)  
A1  
L1  
4. COLLECTOR  
SOLDERING FOOTPRINT*  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
mm  
inches  
1.5  
0.059  
ǒ
Ǔ
SCALE 6:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer  
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
PZT3906T1/D  
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