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FZ1200R33KF2-B5

型号：

FZ1200R33KF2-B5

描述：

Hochstzulassige Werte /最大额定值[ Hochstzulassige Werte / Maximum rated values ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

9 页

PDF大小：

186 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VCES  
V
V
A
A
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
3300  
3300  
Tvj = 25°C  
Tvj = -25°C  
VCES  
IC,nom.  
IC  
1200  
2000  
Kollektor-Dauergleichstrom  
DC-collector current  
T
C = 80°C  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
2400  
14,7  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
1200  
2400  
444  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kW  
kV  
kV  
VR = 0V, tp = 10ms, Tvj = 125°C  
Spitzenverlustleistung der Diode  
maximum power dissipation diode  
T
vj = 125°C  
PRQM  
VISOL  
VISOL  
1200  
10,2  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
Teilentladungs-Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)  
5,1  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
3,40  
4,25  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1200A, VGE = 15V, Tvj = 125°C  
-
4,30  
5,00  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 120 mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
Cies  
Cres  
QG  
4,2  
5,1  
150  
8
6,0  
V
Eingangskapazität  
input capacitance  
f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V  
f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V  
VGE = -15V ... + 15V  
-
-
-
-
-
-
nF  
nF  
µC  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
-
-
Gateladung  
gate charge  
22  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
V
CE = 3300V, VGE = 0V, Tvj = 25°C  
CE = 0V, VGE = 20V, Tvj = 25°C  
ICES  
5
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
IGES  
-
400  
prepared by: Alfons Wiesenthal  
approved by: Christoph Lübke  
date of publication : 2002-10-31  
revision: 2.0  
DB_FZ1200R33KF2 B5_2.0.xls  
1 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200 A, VCE = 1800V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 25°C  
VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 125°C  
-
-
0,70  
0,65  
-
-
µs  
µs  
I
C = 1200 A, VCE = 1800V  
VGE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 25°C  
GE = ±15V, RG = 2,7 Ω, CGE = 220nF, Tvj = 125°C  
C = 1200 A, VCE = 1800V  
VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 25°C  
GE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 125°C  
C = 1200 A, VCE = 1800V  
VGE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 25°C  
GE = ±15V, RG = 1,8 Ω, CGE = 220nF, Tvj = 125°C  
C = 1200 A, VCE = 1800V, VGE = 15V  
RG = 1,5 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH  
C = 1200 A, VCE = 1800V, VGE = 15V  
RG = 1,8 Ω, CGE = 220 nF, Tvj = 125°C, LS = 40nH  
P ≤ 10µsec, VGE ≤ 15V  
Vj≤125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
-
-
0,45  
0,48  
-
-
µs  
µs  
V
I
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
-
-
1,90  
2,10  
-
-
µs  
µs  
V
I
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
-
-
0,20  
0,20  
-
-
µs  
µs  
V
I
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
-
-
2900  
1600  
-
-
mWs  
mWs  
I
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
t
Kurzschlußverhalten  
SC Data  
ISC  
T
-
-
6000  
18  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modul-Leitungswiderstand, Anschlüsse - Chip  
lead resistance, terminals - chip  
TC = 25°C  
RCC'+EE'  
-
0,12  
-
mΩ  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
Durchlaßspannung  
IF = 1200 A, VGE = 0V, Tvj = 25°C  
VF  
IRM  
Qr  
-
2,80  
3,50  
V
V
forward voltage  
IF = 1200 A, VGE = 0V, Tvj = 125°C  
IF = 1200 A, - diF/dt = 4600 A/µsec  
VR = 1800V, VGE = -10V, Tvj = 25°C  
-
2,80  
3,50  
Rückstromspitze  
peak reverse recovery current  
-
-
1250  
1350  
-
-
A
A
VR = 1800V, VGE = -10V, Tvj = 125°C  
IF = 1200 A, - diF/dt = 4600 A/µsec  
VR = 1800V, VGE = -10V, Tvj = 25°C  
Sperrverzögerungsladung  
recovered charge  
-
-
710  
-
-
µAs  
µAs  
VR = 1800V, VGE = -10V, Tvj = 125°C  
1320  
IF = 1200 A, - diF/dt = 4600 A/µsec  
VR = 1800V, VGE = -10V, Tvj = 25°C  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
-
-
680  
-
-
mWs  
mWs  
VR = 1800V, VGE = -10V, Tvj = 125°C  
1400  
DB_FZ1200R33KF2 B5_2.0.xls  
2 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
0,0085  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
-
-
0,0170  
pro Modul / per module  
λPaste = 1 W/m*K / λgrease = 1 W/m*K  
Übergangs-Wärmewiderstand  
RthCK  
Tvj max  
Tvj op  
Tstg  
-
0,006  
-
K/W  
°C  
thermal resistance, case to heatsink  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
-
-
-
-
150  
125  
125  
Betriebstemperatur  
operation temperature  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Material Modulgrundplatte  
AlSiC  
AlN  
56  
material of module baseplate  
Innere Isolation  
internal insulation  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
26  
CTI  
> 600  
-
comperative tracking index  
Anzugsdrehmoment f. mech. Befestigung  
Schraube M6 / screw M6  
M
4,25  
5,75  
Nm  
mounting torque  
Anschlüsse / terminals M4  
Anschlüsse / terminals M8  
M
M
1,8  
8
2,1  
10  
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
Gewicht  
weight  
G
1400  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
DB_FZ1200R33KF2 B5_2.0.xls  
3 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
VGE = 15V  
2400  
2000  
1600  
1200  
800  
400  
0
Tvj = 25°C  
Tvj = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
Tvj = 125°C  
2400  
2000  
1600  
1200  
800  
400  
0
VGE = 8V  
VGE = 9V  
VGE = 10V  
VGE = 12V  
VGE = 15V  
VGE = 20V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
VCE [V]  
DB_FZ1200R33KF2 B5_2.0.xls  
4 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
I = f (VGE)  
C
VCE = 20V  
2400  
2000  
1600  
1200  
800  
400  
0
Tvj = 25°C  
Tvj = 125°C  
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
I = f (VF)  
F
2400  
2000  
1600  
1200  
800  
400  
0
Tvj = 25°C  
Tvj = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
VF [V]  
DB_FZ1200R33KF2 B5_2.0.xls  
5 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
Tvj=125°C, VCE = 1800V, VGE=±15V, RGon = 1,5 Ω, RGoff = 1,8 Ω, CGE = 220 nF  
10000  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Eon  
Eoff  
Erec  
0
300  
600  
900  
1200  
1500  
1800  
2100  
2400  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
E = f (RG) , Eoff = f (RG) , Erec = f (RG)  
on  
Tvj = 125°C, IC = 1200 A , VCE = 1800V , VGE = ±15V, CGE = 220nF  
12000  
Eon  
Eoff  
Erec  
10000  
8000  
6000  
4000  
2000  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG [Ω]  
DB_FZ1200R33KF2 B5_2.0.xls  
6 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Sicherer Arbeitsbereich IGBT (RBSOA)  
VGE = ±15V, RG,off = 1,8Ω, CGE = 220 nF  
Reverse bias safe operation area IGBT (RBSOA)  
Tvj= 125°C  
3000  
2400  
1800  
1200  
600  
IC,Modul  
IC,Chip  
0
0
500  
1000  
1500  
2000  
VCE [V]  
2500  
3000  
3500  
Sicherer Arbeitsbereich Diode (SOA)  
safe operation area Diode (SOA)  
Tvj= 125°C  
3000  
2400  
1800  
1200  
600  
0
0
500  
1000  
1500  
2000  
VR [V]  
2500  
3000  
3500  
DB_FZ1200R33KF2 B5_2.0.xls  
7 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
Zth: IGBT  
Zth: Diode  
0,01  
0,001  
0,0001  
0,001  
0,01  
0,1  
1
10  
t [sec]  
1
2
3
4
i
ri [K/kW]  
τi [sec]  
: IGBT  
: IGBT  
: Diode  
: Diode  
3,83  
0,03  
7,65  
0,03  
2,13  
0,10  
4,25  
0,10  
0,51  
0,30  
1,02  
0,30  
2,04  
1,00  
4,08  
1,00  
ri [K/kW]  
τi [sec]  
DB_FZ1200R33KF2 B5_2.0.xls  
8 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KF2_B5  
vorläufige Daten  
preliminary data  
Äußere Abmessungen /  
extenal dimensions  
DB_FZ1200R33KF2 B5_2.0.xls  
9 (9)  
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