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FZ1000R25KF1

型号：

FZ1000R25KF1

描述：

IGBT模块\n[ IGBT Module ]

品牌：

ETC[ ETC ]

页数：

9 页

PDF大小：

118 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
2500  
V
TC = 80 °C  
IC,nom.  
IC  
1000  
1600  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
2000  
10,4  
+/- 20V  
1000  
2000  
400  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
t
P = 1 ms  
IFRM  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
5
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1000A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
3,0  
3,8  
3,5  
4,3  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1000A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 80mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,3  
5,3  
18  
95  
8
6,3  
V
Gateladung  
gate charge  
V
GE = -15V ... +15V  
QG  
-
-
-
-
-
-
-
µC  
nF  
nF  
mA  
nA  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 2500V, VGE = 0V, Tvj = 25°C  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
IGES  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
-
20  
400  
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
CE = 0V, VGE = 20V, Tvj = 25°C  
-
prepared by: Oliver Schilling  
approved by: Thomas Schütze  
date of publication: 01.09.2001  
revision: 3  
1
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1000A, VCE = 1200V  
GE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C,  
VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C,  
C = 1000A, VCE = 1200V  
GE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 25°C,  
VGE = ±15V, RG = 1,3Ω, CGE=136nF, Tvj = 125°C,  
C = 1000A, VCE = 1200V  
GE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C,  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
V
td,on  
-
-
1,4  
1,5  
-
-
µs  
µs  
I
Anstiegszeit (induktive Last)  
rise time (inductive load)  
V
tr  
-
-
0,25  
0,25  
-
-
µs  
µs  
I
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
V
td,off  
-
-
2,2  
2,2  
-
-
µs  
µs  
VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C,  
IC = 1000A, VCE = 1200V  
Fallzeit (induktive Last)  
fall time (inductive load)  
V
GE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 25°C,  
VGE = ±15V, RG = 2,7Ω, CGE=136nF, Tvj = 125°C,  
C = 1000A, VCE = 1200V, VGE = ±15V  
G = 1,3Ω, CGE=136nF, Tvj = 125°C , LS = 60nH  
IC = 1000A, VCE = 1200V, VGE = ±15V  
G = 2,7Ω, CGE=136nF, Tvj = 125°C , LS = 60nH  
P ≤ 10µsec, VGE ≤ 15V  
tf  
-
-
0,2  
0,2  
-
-
µs  
µs  
I
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
R
Eon  
-
-
1400  
1000  
-
-
mWs  
mWs  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
R
Eoff  
t
Kurzschlußverhalten  
SC Data  
TVj≤125°C, VCC=1200V, VCEmax=VCES -LsCE ·dI/dt  
ISC  
-
-
4000  
12  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modulleitungswiderstand, Anschlüsse - Chip  
module lead resistance, terminals - chip  
RCC´+EE´  
-
0,19  
-
mΩ  
min. typ. max.  
Diode / Diode  
IF = 1000A, VGE = 0V, Tvj = 25°C  
IF = 1000A, VGE = 0V, Tvj = 125°C  
IF = 1000A, - diF/dt = 4000A/µs  
VF  
IRM  
Qr  
-
-
2,3  
2,3  
2,7  
2,7  
V
V
Durchlaßspannung  
forward voltage  
Rückstromspitze  
peak reverse recovery current  
V
R = 1200V, VGE = -10V, Tvj = 25°C  
VR = 1200V, VGE = -10V, Tvj = 125°C  
F = 1000A, - diF/dt = 4000A/µs  
R = 1200V, VGE = -10V, Tvj = 25°C  
VR = 1200V, VGE = -10V, Tvj = 125°C  
F = 1000A, - diF/dt = 4000A/µs  
R = 1200V, VGE = -10V, Tvj = 25°C  
-
-
950  
-
-
A
A
1000  
I
Sperrverzögerungsladung  
recovered charge  
V
-
-
520  
900  
-
-
µAs  
µAs  
I
Abschaltenergie pro Puls  
reverse recovery energy  
V
Erec  
-
-
340  
650  
-
-
mWs  
mWs  
VR = 1200V, VGE = -10V, Tvj = 125°C  
2
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
-
-
0,012  
0,024  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Modul / per Module  
λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCK  
-
0,008  
-
K/W  
°C  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
-
-
-
-
150  
125  
125  
Betriebstemperatur Sperrschicht  
junction operation temperature  
Schaltvorgänge IGBT(RBSOA);Diode(SOA)  
switching operation IGBT(RBSOA);Diode(SOA)  
Tvj,op  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Material Modulbodenplatte  
material of module baseplate  
AlSiC  
Innere Isolation  
internal insulation  
AlN  
32  
Kriechstrecke  
creepage distance  
mm  
mm  
Luftstrecke  
clearance  
19,1  
>400  
CTI  
comperative tracking index  
M1  
M2  
5
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
8 - 10  
Gewicht  
weight  
G
1000  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
3
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I C = f (VCE)  
VGE = 15V  
2000  
1750  
1500  
1250  
1000  
750  
Tj = 25°C  
Tj = 125°C  
500  
250  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
I C = f (VCE)  
Tvj = 125°C  
2000  
1750  
1500  
1250  
1000  
750  
VGE = 20V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 9V  
VGE = 8V  
500  
250  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
VCE [V]  
4
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
IC = f (VGE)  
VCE = 10V  
2000  
1750  
1500  
1250  
1000  
750  
Tj = 25°C  
Tj = 125°C  
500  
250  
0
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
I F = f (VF)  
2000  
Tj = 25°C  
1750  
Tj = 125°C  
1500  
1250  
1000  
750  
500  
250  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
VF [V]  
5
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
Rgon=1,3Ω, Rgoff=2,7Ω, CGE=136nF , VGE=±15V, VCE = 1200V, Tj = 125°C, LS = 60nH  
6000  
5500  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
Eon  
Eoff  
Erec  
0
0
250  
500  
750  
1000  
1250  
1500  
1750  
2000  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
IC = 1000A , VCE = 1200V , VGE=±15V, CGE = 136nF, Tj = 125°C, LS = 60nH  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
Eon  
Eoff  
Erec  
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16  
RG [Ω]  
6
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA)  
Rg = 2,7 Ohm, CGE = 136nF, Tvj= 125°C  
2000  
1750  
1500  
1250  
1000  
750  
IC,Modul  
500  
IC,Chip  
250  
0
0
500  
1000  
1500  
2000  
2500  
VCE [V]  
Sicherer Arbeitsbereich Diode (SOA)  
safe operation area Diode (SOA)  
Tvj= 125°C  
2000  
1750  
1500  
1250  
1000  
750  
500  
250  
0
0
500  
1000  
1500  
2000  
2500  
7
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
0,001  
0,0001  
Zth:Diode  
Zth:IGBT  
0,001  
0,01  
0,1  
1
10  
100  
t [sec]  
1
2
3
4
i
ri [K/kW]  
: IGBT  
1,35  
0,011  
3,15  
3,3  
5,55  
1,8  
: IGBT  
: Diode  
: Diode  
0,052  
7,5  
0,103  
6,75  
0,1  
0,95  
6,6  
τi [sec]  
ri [K/kW]  
τi [sec]  
0,025  
0,056  
1,31  
8
FZ101@3.xls  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1000 R 25 KF1  
Äußere Abmessungen und Schaltbild /  
extenal dimensions and circuit diagram  
9
FZ101@3.xls  
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