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FZ1200R33KL2

型号：

FZ1200R33KL2

描述：

Hochstzulassige Werte /最大额定值[ Hochstzulassige Werte / Maximum rated values ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

9 页

PDF大小：

166 K

下载PDF手册
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VCES  
V
Kollektor-Emitter-Sperrspannung  
3300  
3300  
Tj = 25°C  
Tj = -25°C  
collector-emitter voltage  
IC,nom.  
IC  
1200  
2300  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
T
C = 80°C  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
2400  
14,7  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
1200  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
2400  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
A2s  
kW  
V
VR = 0V, tp = 10ms, TVj = 125°C  
Tj = 125°C  
440.000  
1.500  
6.000  
2.600  
Spitzenverlustleistung der Diode  
maximum power dissipation diode  
PRQM  
VISOL  
VISOL  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
RMS, f = 50 Hz, QPD ? 10 pC (acc. to IEC 1287)  
Teilentladungs-Aussetzspannung  
partial discharge extinction voltage  
V
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
3,00  
3,65  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1200A, VGE = 15V, Tvj = 125°C  
-
3,70  
4,45  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 120 mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
Cies  
Cres  
QG  
4,2  
5,1  
145  
8
6,0  
V
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VGE = -15V ... + 15V, VCE = 1800V  
-
-
-
-
-
-
nF  
nF  
µC  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
-
-
Gateladung  
gate charge  
22  
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
V
CE = 3300V, VGE = 0V, Tvj = 25°C  
CE = 0V, VGE = 20V, Tvj = 25°C  
ICES  
5
Gate-Emitter Reststrom  
gate-emitter leakage current  
V
IGES  
-
400  
prepared by: J. Biermann  
date of publication : 2002-04-23  
revision: 3  
approved by: Christoh Lübke; 2002-04-30  
FZ1200R33KL2_V Rev3.xls  
1 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
IC = 1200 A, VCC = 1800V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
td,on  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF, Tvj = 25°C  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF,Tvj = 125°C  
-
-
700  
700  
ns  
ns  
I
C = 1200 A, VCC = 1800V  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
tr  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF, Tvj = 25°C  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF,Tvj = 125°C  
-
-
450  
450  
ns  
ns  
I
C = 1200 A, VCC = 1800V  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
td,off  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF, Tvj = 25°C  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF,Tvj = 125°C  
-
-
2500  
2700  
-
-
ns  
ns  
I
C = 1200 A, VCC = 1800V  
Fallzeit (induktive Last)  
fall time (inductive load)  
tf  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF, Tvj = 25°C  
VGE = ±15V, RG = 2,7ꢀ, CGE = 330nF,Tvj = 125°C  
-
-
220  
330  
-
-
ns  
ns  
I
C = 1200 A, VCC = 1800V, VGE = 15V  
RG = 1,2ꢀ, CGE = 330nF, Tvj = 125°C, LS = 40nH  
C = 1200 A, VCC = 1800V, VGE = 15V  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
Eon  
Eoff  
-
-
2700  
1590  
-
-
mWs  
mWs  
I
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
RG = 2,7ꢀ, CGE = 330nF, Tvj = 125°C, LS = 40nH  
tP ? 10µsec, VGE ? 15V  
Kurzschlußverhalten  
SC Data  
ISC  
TVj?125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt  
-
-
5200  
10  
-
-
A
Modulinduktivität  
stray inductance module  
LsCE  
nH  
Modul-Leitungswiderstand, Anschlüsse - Chip  
lead resistance, terminals - chip  
RCC'+EE'  
T = 25°C  
-
0,12  
-
mꢀ  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
Durchlaßspannung  
IF = 1200 A, VGE = 0V, Tvj = 25°C  
VF  
IRM  
Qr  
-
2,60  
3,35  
V
V
forward voltage  
IF = 1200 A, VGE = 0V, Tvj = 125°C  
IF = 1200 A, - diF/dt = 4900 A/µsec  
-
2,45  
3,30  
Rückstromspitze  
peak reverse recovery current  
V
R = 1800V, VGE = -10V, Tvj = 25°C  
R = 1800V, VGE = -10V, Tvj = 125°C  
-
-
1180  
1300  
-
-
A
A
V
IF = 1200 A, - diF/dt = 4900 A/µsec  
VR = 1800V, VGE = -10V, Tvj = 25°C  
Sperrverzögerungsladung  
recovered charge  
-
-
650  
-
-
µAs  
µAs  
VR = 1800V, VGE = -10V, Tvj = 125°C  
1200  
IF = 1200 A, - diF/dt = 4900 A/µsec  
VR = 1800V, VGE = -10V, Tvj = 25°C  
Abschaltenergie pro Puls  
reverse recovery energy  
Erec  
-
-
430  
-
-
mWs  
mWs  
VR = 1800V, VGE = -10V, Tvj = 125°C  
1150  
FZ1200R33KL2_V Rev3.xls  
2 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Thermische Eigenschaften / Thermal properties  
min. typ. max.  
RthJC  
Transistor / transistor, DC  
Diode/Diode, DC  
-
-
0,0085  
K/W  
K/W  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
-
-
0,0170  
pro Modul / per module  
Übergangs-Wärmewiderstand  
RthCK  
-
0,006  
-
K/W  
°C  
thermal resistance, case to heatsink  
ꢁ
Paste = 1 W/m*K / ꢁgrease = 1 W/m*K  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj  
-
-
-
-
150  
125  
125  
Betriebstemperatur  
operation temperature  
Tvj op  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
Tstg  
°C  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Material Modulgrundplatte  
AlSiC  
AlN  
material of module baseplate  
Innere Isolation  
internal insulation  
Kriechstrecke  
32,2  
19,1  
mm  
mm  
creepage distance  
Luftstrecke  
clearance  
CTI  
> 400  
5
comperative tracking index  
M1  
M2  
Nm  
Anzugsdrehmoment f. mech. Befestigung  
mounting torque  
terminals M4  
terminals M8  
2
Nm  
Nm  
Anzugsdrehmoment f. elektr. Anschlüsse  
terminal connection torque  
8 .. 10  
Gewicht  
weight  
G
1500  
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.  
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is  
valid in combination with the belonging technical notes.  
FZ1200R33KL2_V Rev3.xls  
3 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Ausgangskennlinie (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
VGE = 15V  
2400  
2000  
1600  
1200  
800  
400  
0
T = 25°C  
T = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
Output characteristic (typical)  
I = f (VCE)  
C
Tvj = 125°C  
2400  
2000  
1600  
1200  
800  
400  
0
VGE = 8V  
VGE = 9V  
VGE = 10V  
VGE = 12V  
VGE = 15V  
VGE = 20V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
VCE [V]  
FZ1200R33KL2_V Rev3.xls  
4 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
I = f (VGE)  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
C
VCE = 20V  
2400  
2000  
1600  
1200  
800  
400  
0
T = 25°C  
T = 125°C  
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of inverse diode (typical)  
I = f (VF)  
F
2400  
2000  
1600  
1200  
800  
400  
0
Tj = 25°C  
Tj = 125°C  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
VF [V]  
FZ1200R33KL2_V Rev3.xls  
5 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Schaltverluste (typisch)  
Switching losses (typical)  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
RGom = 1,2 ꢀꢁꢂRGoff = 2,7 ꢀꢁꢂCGE = 330 nF, VCE = 1800V, Tj = 125°C  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Eon  
Eoff  
Erec  
0
300  
600  
900  
1200  
1500  
1800  
2100  
2400  
IC [A]  
Schaltverluste (typisch)  
Switching losses (typical)  
E = f (RG) , Eoff = f (RG) , Erec = f (RG)  
on  
IC = 1200 A , CGE = 330 nF, VCE = 1800V , Tj = 125°C  
14000  
12000  
10000  
8000  
6000  
4000  
2000  
0
Eon  
Eoff  
Erec  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG [ꢀ]  
FZ1200R33KL2_V Rev3.xls  
6 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Sicherer Arbeitsbereich IGBT (RBSOA)  
RG,off = 2,7ꢀ, CGE = 330 nF  
Tvj= 125°C  
Reverse bias safe operation area IGBT (RBSOA)  
3000  
2400  
1800  
1200  
600  
IC,Modul  
IC,Chip  
0
0
500  
1000  
1500  
2000  
VCE [V]  
2500  
3000  
3500  
Sicherer Arbeitsbereich Diode (SOA)  
safe operation area Diode (SOA)  
Tvj= 125°C  
3000  
2400  
1800  
1200  
600  
0
0
500  
1000  
1500  
2000  
VR [V]  
2500  
3000  
3500  
FZ1200R33KL2_V Rev3.xls  
7 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
Zth:IGBT  
Zth:Diode  
0,01  
0,001  
0,0001  
0,001  
0,01  
0,1  
1
10  
t [sec]  
1
1,56  
0,0068  
3,11  
0,0068  
2
3
1,26  
0,3209  
2,52  
0,3209  
4
1,44  
2,0212  
2,88  
2,0212  
i
ri [K/kW]  
: IGBT  
: IGBT  
: Diode  
: Diode  
4,25  
0,0642  
8,49  
ꢀ [sec]  
ri [K/kW]  
ꢀ [sec]  
i
0,0642  
i
FZ1200R33KL2_V Rev3.xls  
8 (9)  
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1200 R 33 KL2  
vorläufiges Datenblatt  
preliminary datasheet  
Gehäusemaße / Schaltbild  
Package outline / Circuit diagram  
FZ1200R33KL2_V Rev3.xls  
9 (9)  
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