UTCPZTA92/93 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 DC Current Gain
Fig.2 Saturation Voltage
Fig.3 Capacitance
3
2
10
4
10
-10
-10
Ic=10*I
B
V
CE(sat)
VCE=-10V
C
IB
2
10
3
VBE(sat)
1
10
C
CB
2
-10
1
10
0
1
10
-10
0
1
2
3
4
0
1
2
3
4
-1
-10
0
1
2
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Collector current, Ic(mA)
Collector current, Ic(mA)
Collector-Base voltage(V)
Fig.4 Active-region safe
operating area
Fig.5 Current Gain
Bandwidth product
3
3
10
-10
V
CE=-20V
2
MPSA93
f=100MHz
-10
2
10
MPSA92
1
1
-10
625mW Thermal
limitation Ta=25°C
bonding breakdown
limitation Tj=150°C
1
-10
10
0
1
2
3
0
1
2
-10
-10
-10
-10
-10
-10
-10
Collector-Emitter voltage ( v)
Collector current, Ic(mA)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
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3
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