PZT5551
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
180
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
160
V
6
600
V
mA
W
Power Dissipation
PC
2
℃
Operating Junction Temperature
Storage Temperature
TJ
+150
-65 ~ +150
℃
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
Thermal Resistance
θJA
℃/W
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
180
160
6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=100μA, IE=0
BVCEO IC=1mA, IB=0
BVEBO IE=10μA, IC=0
ICBO
IEBO
V
V
VCB=120V, IE=0
VBE=4V, Ic=0
50
50
nA
nA
Emitter Cut-off Current
VCE=5V, Ic=1mA
80
80
80
DC Current Gain(note)
hFE
VCE=5V, Ic=10mA
CE=5V, Ic=50mA
160
400
V
IC=10mA, IB=1mA
0.15
0.2
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(SAT)
1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=10V, Ic=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=0.25mA, VCE=5V
100
300
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-007,D
