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PZT5551

型号:

PZT5551

描述:

NPN硅平面外延型晶体管[ NPN Silicon Planar Epitaxial Transistor ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

4 页

PDF大小:

357 K

PZT5551  
NPN Silicon Planar Epitaxial Transistor  
COLLECTOR  
2,4  
4
1. BASE  
2.COLLECTOR  
3.EMITTER  
4.COLLECTOR  
BASE  
1
1
2
3
3
SOT-223  
EMITTER  
ABSOLUTE MAXIMUM RATINGS  
(T =25˚C)  
A
Symbol  
Unit  
V
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Value  
160  
180  
6
V
CEO  
V
V
CBO  
V
V
EBO  
I
600  
Collector Current (DC)  
mA  
C
P
Total Device Disspation  
Junction Temperature  
Storage, Temperature  
W
˚C  
˚C  
1.5  
150  
D
Tj  
-55 to +150  
Tstg  
Device Marking  
PZT5551=5551  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol Min  
Typ  
Max  
Unit  
Collector-Emitter Breakdown Voltage  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
160  
180  
6
-
-
V
(I =1mA,I =0)  
C
B
Collector-Base Breakdown Voltage  
-
-
-
-
-
-
V
V
(I =100µA,I =0)  
C
E
Emitter-Base Breakdown Voltage  
(I =10 µA,I =0)  
E
C
Collector-Emitter Cutoff Current  
-
50  
50  
nA  
nA  
(V =120V,I =0)  
CB  
E
Emitter-Base Cutoff Current  
-
IEBO  
(V =4V,I =0)  
EB  
C
WEITRON  
http://www.weitron.com.tw  
1/4  
05-Jul-05  
PZT5551  
ON CHARACTERISTICS  
Characteristics  
Symbol Min  
Typ  
Max  
Unit  
DC Current Gain  
80  
80  
50  
-
160  
-
-
400  
-
hFE1  
hFE2  
hFE3  
(V = 5V, I = 1mA)  
CE  
C
-
(V = 5V, I = 10mA)  
CE  
C
(V = 5V, I = 50mA)  
CE  
C
Collector-Emitter Saturation Voltages  
-
-
-
-
V
V
0.15  
0.2  
VCE(sat)  
(I = 10mA, I = 1mA)  
C
B
(I = 50mA, I = 5mA)  
C
B
Base-Emitter Saturation Voltages  
-
-
V
1
VBE(sat)  
(I = 10mA, I = 1mA)  
C
B
(I = 50mA, I = 5mA)  
C
B
DYNAMIC CHARACTERISTICS  
Current-Gain  
100  
-
-
MHz  
pF  
300  
6
fT  
(V = 10V, I = 10mA, f = 100MHz)  
CE  
C
Output Capacitance  
-
Cob  
(V = 10V, I = 0, f = 1MHz)  
CB  
E
CLASSIFICATION OF hFE2  
Rank  
A
N
C
Range  
80 - 200  
100 - 250  
160 - 400  
WEITRON  
http://www.weitron.com.tw  
2 /4  
05-Jul-05  
PZT5551  
Characteristics Curve  
1000  
100000  
10000  
VCE(sat) @IC=10 IB  
125˚C  
25˚C  
75˚C  
100  
1000  
100  
10  
10  
75˚C  
125˚C  
25˚C  
hFE@VCE = 5V  
1
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
Collector Current (mA)  
Collector Current-IC (mA)  
Fig.1 Current Gain & Collector Current  
Fig.2 Saturation Voltage & Collector Current  
100  
1000  
25˚C  
75˚C  
10  
125˚C  
V
@ I =10I  
C
Cob  
BE(sat)  
B
100  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
Reverse Biased Voltage(V)  
Collector Current-IC (mA)  
Fig.3 Saturation Voltage & Collector Current  
Fig.4 Capacitance & Reverse-Biased Voltage  
1000  
10000  
PT=1ms  
PT=100ms  
1000  
PT=1s  
100  
100  
10  
1
V
=10V  
CE  
1
1
10  
100  
1
10  
100  
1000  
Collector Current (mA)  
Forward Voltage-VCE(V)  
Fig.5 Cutoff Frequency & Collector Current  
Fig.6 Safe Operation Area  
WEITRON  
http://www.weitron.com.tw  
3/4  
05-Jul-05  
PZT5551  
SOT-223 Outline Dimensions  
unit:mm  
MILLIMETERS  
A
F
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
DIM  
A
B
C
D
F
G
H
J
K
L
4
S
B
1
2
3
D
0.020 0.100  
L
G
0.24  
1.50  
0.85  
0
0.35  
2.00  
1.05  
10  
J
C
M
M
S
H
K
6.70  
7.30  
WEITRON  
http://www.weitron.com.tw  
4 /4  
05-Jul-05  
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