PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
ꢀ ABSOLUATE MAXIUM RATINGS (Ta = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-160
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC Collector Current
-150
V
-5
V
-600
mA
W
Power Dissipation
PD
2
℃
Operating Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
℃
TSTG
ꢀ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
TEST CONDITIONS
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VBE=-3V, Ic=0
MIN
-160
-150
-6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
ICBO
-50
-50
nA
nA
Emitter Cut-off Current
IEBO
V
CE=-5V, Ic=-1mA
80
80
80
DC Current Gain(note)
hFE
VCE=-5V, Ic=-10mA
VCE=-5V, Ic=-50mA
400
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-0.2
-0.5
-1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
V
V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
-1
Current Gain Bandwidth Product
Output Capacitance
fT
VCE=-10V, Ic=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
IC=-0.25mA, VCE=-5V
RS=1kΩ, f=10Hz ~ 15.7kHz
100
400
6.0
MHz
pF
Cob
Noise Figure
NF
8
dB
Note: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
80-170
150-240
200-400
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-013,A
