UTCPZT4033
PNP EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
VBE(sat)
TEST CONDITIONS
Ic=-150mA,IB=-15mA
MIN TYP MAX UNIT
Base-emitter saturation voltage
-0.9
-1.1
V
Ic=-500mA,IB=-50mA
Gain Bandwidth Product
Output capacitance
Intput capacitance
Turn-on Time
fT
Cob
Cib
ton
tstg
tf
VCE= -10V,Ic= -50mA, f=1MHz 100
VCB=-10V,IE=0, f=1MHz
VEB=-0.5V,IC=0, f=1MHz
MHz
pF
pF
ns
ns
ns
20
110
100
350
50
Ic=-500 mA, VCE= -30V,
IB1=- IB2=-50mA
Switching Time
Storage Time
Fall Time
TYPICAL PARAMETERS PERFORMANCE
Typical Pulsed Current Gain
vs Collector Current
Collector-emitter Saturation Voltage
vs Collector Current
300
β =10
VCE=5V
250
0.6
0.4
200
Ta =125℃
Ta =25℃
Ta =-40℃
150
100
Ta =25℃
50
0
Ta = -40℃
0.2
1
3
10
30 100 300 1000
Ta =125℃
0.1 0.3
Ic -Collector Current (mA)
100
Ic -Collector Current(mA)
1000
10
Base-emitter Saturation Voltage
vs Collector Current
Base-emitter ON Voltage
vs Collector Current
1.0
0.8
1.2
1
β =10
VCE=5V
Ta =-40℃
Ta =-40℃
Ta =25℃
0.8
0.6
0.4
0.6
Ta =25℃
Ta =125℃
0.4
0.2
Ta =125℃
100
1000
0.1
1
10
50
10
Ic -Collector Current(mA)
Ic -Collector Current(mA)
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
Collector Cut off Current
vs Ambient Temperature
100
10
1
500
VCB=5V
f =1.0MHz
200
100
Cibo
50
20
0.1
Cobo
10
6
-0.1
-1
-10
-50
100
125
150
50
75
25
TA-Ambient Temperature (℃)
Reverse Bias Voltage ( V)
2
UTC
UNISONIC TECHNOLOGIES CO. LTD
QW-R207-002,A
