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PZT3904T1

型号：

PZT3904T1

描述：

通用晶体管[ General Purpose Transistor ]

品牌：

ONSEMI[ ONSEMI ]

页数：

8 页

PDF大小：

110 K

下载PDF手册
PZT3904T1  
Preferred Device  
General Purpose Transistor  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol Value  
Unit  
Vdc  
http://onsemi.com  
V
CEO  
V
CBO  
V
EBO  
40  
60  
Vdc  
COLLECTOR  
2, 4  
6.0  
200  
Vdc  
Collector Current − Continuous  
I
C
mAdc  
1
THERMAL CHARACTERISTICS  
Characteristic  
BASE  
Symbol  
Max  
Unit  
3
Total Device Dissipation (Note 1)  
T = 25°C  
A
P
D
1.5  
12  
W
mW/°C  
EMITTER  
Thermal Resistance Junction−to−Ambient  
(Note 1)  
R
83.3  
°C/W  
q
JA  
JA  
MARKING  
DIAGRAM  
Thermal Resistance Junction−to−Lead #4  
Junction and Storage Temperature Range  
R
35  
°C/W  
°C  
q
T , T  
J
−55 to  
+150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
AWW  
1AM  
SOT−223  
CASE 318E  
Style 1  
2
1. FR−4 with 1 oz and 713 mm of copper area.  
1AM = Specific Device Code  
= Assembly Location  
WW = Work Week  
A
ORDERING INFORMATION  
†
Device  
PZT3904T1  
Package  
Shipping  
SOT−223  
1000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 1  
PZT3904T1/D  
 
PZT3904T1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Collector−Emitter Breakdown Voltage (Note 3)  
V
40  
60  
6.0  
−
−
−
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 1.0 mAdc, I = 0)  
C
B
Collector−Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
V
C
E
Emitter−Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
−
E
C
Base Cutoff Current  
(V = 30 Vdc, V = 3.0 Vdc)  
I
BL  
50  
50  
nAdc  
CE  
EB  
Collector Cutoff Current  
(V = 30 Vdc, V = 3.0 Vdc)  
I
−
CEX  
CE  
EB  
ON CHARACTERISTICS (Note 3)  
DC Current Gain (Note 2)  
H
−
FE  
(I = 0.1 mAdc, V = 1.0 Vdc)  
40  
70  
−
−
C
CE  
(I = 1.0 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 10 mAdc, V = 1.0 Vdc)  
100  
60  
300  
−
C
CE  
(I = 50 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 100 mAdc, V = 1.0 Vdc)  
30  
−
C
CE  
Collector−Emitter Saturation Voltage (Note 3)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
−
−
0.2  
0.3  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
Base−Emitter Saturation Voltage (Note 3)  
(I = 10 mAdc, I = 1.0 mAdc)  
V
BE(sat)  
0.65  
−
0.85  
0.95  
C
B
(I = 50 mAdc, I = 5.0 mAdc)  
C
B
SMALL−SIGNAL CHARACTERISTICS  
Current−Gain − Bandwidth Product  
f
300  
−
−
MHz  
pF  
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance  
C
5.0  
8.0  
10  
obo  
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)  
CB  
E
Input Capacitance  
C
−
ibo  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
EB  
C
Input Impedance  
h
1.0  
0.5  
100  
1.0  
−
kW  
ie  
re  
fe  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
CE  
C
−4  
Voltage Feedback Ratio  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
h
h
8.0  
400  
40  
X 10  
CE  
C
Small−Signal Current Gain  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
−
CE  
C
Output Admittance  
h
oe  
mmhos  
dB  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
CE  
C
Noise Figure  
nF  
5.0  
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 kW, f = 1.0 kHz)  
CE  
C
S
SWITCHING CHARACTERISTICS  
Delay Time  
t
t
−
−
−
−
35  
35  
ns  
d
(V = 3.0 Vdc, V = −0.5 Vdc,  
CC  
BE  
I
C
= 10 mAdc, I = 1.0 mAdc)  
B1  
Rise Time  
t
r
Storage Time  
200  
50  
s
(V = 3.0 Vdc,  
CC  
I
= 10 mAdc, I = I = 1.0 mAdc)  
C
B1 B2  
Fall Time  
t
f
2. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
http://onsemi.com  
2
 
             
PZT3904T1  
+3 V  
+3 V  
DUTY CYCLE = 2%  
300 ns  
t
1
10 < t < 500 ms  
1
+10.9 V  
DUTY CYCLE = 2%  
+10.9 V  
< 1 ns  
275  
275  
10 k  
10 k  
0
−
0.5 V  
C < 4 pF*  
S
C < 4 pF*  
S
1N916  
−ꢀ9.1 V′  
< 1 ns  
* Total shunt capacitance of test jig and connectors  
Figure 1. Delay and Rise Time  
Equivalent Test Circuit  
Figure 2. Storage and Fall Time  
Equivalent Test Circuit  
http://onsemi.com  
3
PZT3904T1  
TYPICAL TRANSIENT CHARACTERISTICS  
T = 25°C  
J
T = 125°C  
J
10  
5000  
V
= 40 V  
CC  
I /I = 10  
3000  
2000  
7.0  
C B  
5.0  
1000  
700  
C
ibo  
500  
3.0  
2.0  
Q
T
300  
200  
C
obo  
Q
A
100  
70  
1.0  
0.1  
50  
0.2 0.3 0.5 0.7 1.0  
2.0 3.0 5.0 7.0 10  
20 30 40  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
REVERSE BIAS VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Capacitance  
Figure 4. Charge Data  
500  
500  
I /I = 10  
C B  
V
= 40 V  
CC  
I /I = 10  
300  
200  
300  
200  
C B  
100  
70  
100  
70  
t @ V = 3.0 V  
r CC  
50  
50  
30  
20  
30  
20  
40 V  
15 V  
10  
10  
2.0 V  
7
5
7
5
t @ V = 0 V  
OB  
d
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Turn−On Time  
Figure 6. Rise Time  
500  
500  
1
t′ = t − / t  
8 f  
s
s
V
I
= 40 V  
CC  
300  
200  
300  
200  
I = I  
B1 B2  
= I  
B1 B2  
I /I = 20  
C B  
I /I = 10  
C B  
I /I = 20  
C B  
100  
70  
100  
70  
I /I = 20  
C B  
50  
50  
I /I = 10  
C B  
I /I = 10  
C B  
30  
20  
30  
20  
10  
10  
7
5
7
5
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
1.0  
2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. Storage Time  
Figure 8. Fall Time  
http://onsemi.com  
4
PZT3904T1  
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS  
NOISE FIGURE VARIATIONS  
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)  
12  
10  
8
14  
SOURCE RESISTANCE = 200 W  
= 1.0 mA  
f = 1.0 kHz  
I
C
= 1.0 mA  
I
C
12  
10  
8
I
C
= 0.5 mA  
SOURCE RESISTANCE = 200 W  
= 0.5 mA  
I
C
= 50 mA  
I
C
6
4
I
C
= 100 mA  
SOURCE RESISTANCE = 1.0 k  
= 50 mA  
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500 W  
= 100 mA  
I
C
0.1 0.2  
0.4  
1.0 2.0 4.0  
10  
20  
40  
100  
0.1 0.2  
0.4  
1.0 2.0  
4.0  
10  
20  
40  
100  
f, FREQUENCY (kHz)  
R , SOURCE RESISTANCE (k W)  
S
Figure 9.  
Figure 10.  
h PARAMETERS  
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)  
300  
200  
100  
50  
20  
10  
5
100  
70  
50  
30  
2
1
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Current Gain  
Figure 12. Output Admittance  
20  
10  
10  
7.0  
5.0  
5.0  
2.0  
3.0  
2.0  
1.0  
0.5  
1.0  
0.7  
0.5  
0.2  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 13. Input Impedance  
Figure 14. Voltage Feedback Ratio  
http://onsemi.com  
5
PZT3904T1  
TYPICAL STATIC CHARACTERISTICS  
2.0  
1.0  
T = +125°C  
J
V
CE  
= 1.0 V  
+25°C  
−ꢀ55°C  
0.7  
0.5  
0.3  
0.2  
0.1  
0.1  
0.2  
0.3  
0.5 0.7  
1.0  
2.0  
3.0  
5.0 7.0 10  
20  
30  
50  
70 100  
200  
I , COLLECTOR CURRENT (mA)  
C
Figure 15. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
T = 25°C  
J
I
C
= 1.0 mA  
10 mA  
30 mA  
100 mA  
0.2  
0
0.01  
0.02  
0.03  
0.05 0.07 0.1  
0.2  
0.3  
0.5  
0.7  
1.0  
2.0  
3.0  
5.0  
7.0  
10  
I , BASE CURRENT (mA)  
B
Figure 16. Collector Saturation Region  
1.2  
1.0  
0.8  
1.0  
T = 25°C  
J
V
@ I /I =10  
C B  
BE(sat)  
+25°C TO +125°C  
−ꢀ55°C TO +25°C  
0.5  
0
q
FOR V  
CE(sat)  
VC  
V
BE  
@ V =1.0 V  
CE  
0.6  
0.4  
−ꢀ0.5  
−ꢀ1.0  
−ꢀ55°C TO +25°C  
+25°C TO +125°C  
V
@ I /I =10  
C B  
CE(sat)  
q
FOR V  
BE(sat)  
VB  
0.2  
0
−ꢀ1.5  
−ꢀ2.0  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
0
20  
40  
60  
80 100 120 140 160 180 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 17. “ON” Voltages  
Figure 18. Temperature Coefficients  
http://onsemi.com  
6
PZT3904T1  
PACKAGE DIMENSIONS  
SOT−223 (TO−261)  
CASE 318E−04  
ISSUE K  
A
F
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
4
2
INCHES  
DIM MIN MAX  
MILLIMETERS  
S
B
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
0.100  
0.35  
2.00  
1.05  
10  
1
3
A
B
C
D
F
0.249  
0.130  
0.060  
0.024  
0.115  
0.087  
0.263  
0.145  
0.068  
0.035  
0.126  
0.094  
D
G
H
J
L
0.0008 0.0040 0.020  
G
0.009  
0.060  
0.033  
0
0.014  
0.078  
0.041  
10  
0.24  
1.50  
0.85  
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)  
0.264  
0.287  
6.70  
7.30  
M
H
K
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
SOLDERING FOOTPRINT  
3.8  
0.15  
2.0  
0.079  
6.3  
0.248  
2.3  
0.091  
2.3  
0.091  
2.0  
0.079  
1.5  
0.059  
http://onsemi.com  
7
PZT3904T1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
PZT3906T1/D  
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