NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
Collector-Emitter Breakdown Voltage
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V, VEB = 0
VCE = 30 V, VEB = 0
40
60
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
6.0
V
50
50
nA
nA
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
70
100
60
300
30
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
0.65
300
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
MHz
pF
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
4.0
8.0
5.0
Cobo
Cibo
NF
Input Capacitance
pF
Noise Figure (except MMPQ3904)
dB
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ, f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS (except MMPQ3904)
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
35
35
ns
ns
ns
ns
td
tr
200
50
ts
tf
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
