PZT2222A
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
75
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6
0.6
V
A
Total Device Dissipation
Junction Temperature
Storage Temperature
PC
1
W
℃
℃
TJ
+150
-55 ~ +150
TSTG
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
ꢀ
THERMAL DATA (Ta=25℃, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
125
UNIT
℃/W
Thermal resistance, junction to Ambient
θJA
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BVCBO IC=10µA, IE=0
BVCEO IC=10mA, IB=0
BVEBO IE=10µA, IC=0
75
40
6
V
V
V
ICEO
ICBO
IEBO
IBL
VCE=60V, VEB(OFF)=3.0V
CB=60V, IE=0
VCB=60V,IE=0, Ta=150℃
10
0.01
10
nA
µA
µA
nA
nA
V
Collector Cut-Off Current
Emitter Cut-Off Current
Base Cut-Off Current
ON CHARACTERISTICS
VEB=3.0V, IC=0
10
VCE=60V, VEB(OFF)=3.0V
20
IC=0.1mA, VCE=10V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
35
50
75
IC=10mA, VCE=10V, Ta=-55℃
IC=150mA, VCE=10V*
IC=150mA, VCE=1.0V*
IC=500mA, VCE=10V*
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
DC Current Gain
hFE
35
100
50
300
40
0.3
1.0
1.2
2.0
V
V
V
V
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
VCE(SAT)
VBE(SAT)
0.6
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
fT
IC=20mA, VCE=20V, f=100MHz
300
MHz
pF
Output Capacitance
Cobo VCB=10V, IE=0, f=100kHz
Cibo VEB=0.5V, IC=0, f=100kHz
rb'Cc IC=20mA, VCB=20V, f=31.8MHz
8.0
25
Input Capacitance
pF
Collector Base Time Constant
150
pS
IC=100µA, VCE=10V, RS=1.0kΩ,
f=1.0kHz
Noise Figure
NF
4.0
60
dB
Real Part of Common-Emitter High
Frequency Input Impedance
Re(hje) IC=20mA, VCB=20V, f=300MHz
Ω
UNISONIC TECHNOLOGIES CO., LTD
2 of 6
QW-R207-001,B
www.unisonic.com.tw
