PZT2222 / PZT2222A
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA
PZT2222
PZT2222A VBEsat
VBEsat
–
–
–
–
1.3 V
1.2 V
IC = 500 mA, IB = 50 mA
PZT2222
PZT2222A VBEsat
VBEsat
–
–
–
–
2.6 V
2.0 V
DC current gain – Kollektor-Basis-Stromverhältnis
IC = 0.1 mA, VCE = 10 V
hFE
hFE
hFE
hFE
35
50
75
–
–
–
–
–
–
–
IC = 1 mA,
VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V 2)
100
300
IC = 500 mA, VCE = 10 V 2)
PZT2222
PZT2222A
hFE
hFE
30
40
–
–
–
–
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Switching times – Schaltzeiten
fT
200 MHz
–
–
–
–
CCBO
–
–
8 pF
30 pf
CEBO
delay time
td
tr
ts
tf
–
–
–
–
–
–
–
–
10 ns
25 ns
225 ns
60 ns
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
rise time
storage time
fall time
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
RthS
< 93 K/W 1)
Thermal resistance junction to soldering point
Wärmewiderstand Sperrschicht – Lötpad
< 27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
PZT2907, PZT2907A
2
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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