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PZT2222A

型号:

PZT2222A

描述:

NPN硅平面外延型晶体管[ NPN Silicon Planar Epitaxial Transistor ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

4 页

PDF大小:

105 K

PZT2222A  
NPN Silicon Planar Epitaxial Transistor  
COLLECTOR  
2, 4  
SOT-223  
4
1. BASE  
BASE  
1
2.COLLECTOR  
1
3.EMITTER  
2
4.COLLECTOR  
3
3
EM ITTER  
ABSOLUTE MAXIMUM RATINGS  
(Ta=25 C)  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Value  
40  
V
CEO  
V
CBO  
75  
6.0  
600  
1.5  
V
EBO  
Collector Current (DC)  
I
C(DC)  
Total Device Disspation T =25 C  
P
W
C
A
D
Junction Temperature  
Storage,Temperature  
T
j
150  
-65 to +150  
Tstg  
C
Device Marking  
PZT2222A=GT2222A  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = 10 mAdc, I =0)  
V
40  
Vdc  
C
B
(BR)CEO  
-
-
75  
Vdc  
Vdc  
Collector-Base Breakdown Voltage (I =10 µAdc, I =0)  
V
V
C
E
(BR)CBO  
6.0  
Emitter-Base Breakdown Voltage (I = 10 µAdc, I =0)  
(BR)EBO  
E
C
I
nAdc  
nAdc  
nAdc  
BEX  
20  
10  
Base-Emitter Cutoff Current (V = 60 Vdc,V =-3.0Vdc)  
CE  
-
-
BE  
I
Collector-Emitter Cutoff Current (V = 60 Vdc,V =-3.0Vdc)  
CEX  
CE  
BE  
-
I
100  
Emitter-Base Cutoff Current (V = 3.0Vdc, I =0)  
EBO  
EB  
C
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the  
2
collector lead min. 0.93 inches.  
WEITRON  
http://www.weitron.com.tw  
PZT2222A  
= 25  
ELECTRICALCHARACTERISTICS Continued (T  
Characteris tic  
C unless otherwise noted)  
S ymbol  
A
Min  
Max  
Unit  
OFF CHARACTERISTICS (continued)  
Collector-Base Cutoff Current  
I
CBO  
(V  
(V  
= 60 Vdc, I = 0)  
-
-
10  
10  
nAdc  
uAdc  
CB  
CB  
E
= 60 Vdc, I = 0, T = 125 C)  
A
E
ON CHARACTERISTICS  
DC Current Gain  
h
-
FE  
(I = 0.1 mAdc, V = 10 Vdc)  
35  
50  
-
-
C
CE  
CE  
(I = 1.0 mAdc, V = 10 Vdc)  
C
(I = 10 mAdc, V = 10 Vdc)  
70  
35  
-
-
C
CE  
(I = 10 mAdc, V = 10 Vdc, T = - 55 C)  
C
CE  
A
(I = 150 mAdc, V = 10 Vdc)  
100  
50  
300  
-
C
CE  
(I = 150 mAdc, V = 1.0 Vdc)  
C
CE  
(I = 500 mAdc, V = 10 Vdc)  
40  
-
C
CE  
Collector-Emitter Saturation Voltages  
(I = 150 mAdc, I = 15 mAdc)  
V
V
Vdc  
CE(sat)  
BE( sat)  
-
-
0.3  
1.0  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
Base-Emitter Saturation Voltages  
(I = 150 mAdc, I = 15 mAdc)  
Vdc  
0.6  
-
1.2  
2.0  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
Input Impedance 5  
5h 5  
ie  
k
(V  
(V  
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
2.0  
0.25  
8.0  
1.25  
CE  
CE  
C
C
Voltage Feedback Ratio  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
h
h
-
-
re  
fe  
-4  
-
-
8.0x10  
CE  
C
-4  
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
4.0x10  
CE  
C
Small-Signal Current Gain  
(V  
(V  
= 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
50  
75  
300  
375  
CE  
CE  
C
= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
C
Output Admittance 5  
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)  
5h  
5
umhos  
dB  
oe  
5.0  
25  
35  
200  
CE  
C
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
CE  
C
Noise Figure (V  
= 10 Vdc, I = 100 uAdc, f = 1.0 kHz)  
F
-
4.0  
CE  
C
DYNAMICCHARACTERISTICS  
Current-Gain Bandwidth Product  
f
300  
-
MHz  
pF  
T
(I = 20 mAdc, V  
C
= 20 Vdc, f = 100 MHz)  
CE  
Output Capacitance  
C
-
-
8.0  
25  
c
e
(V  
= 10 Vdc, I = 0, f = 1.0 MHz)  
CB  
E
Input Capacitance  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
C
pF  
EB  
C
SWITCHINGTIMES(T = 25 C)  
A
Delay Time  
Rise Time  
(V  
= 30 Vdc, I = 150 mAdc,  
t
t
-
-
-
-
10  
25  
ns  
ns  
CC  
C
d
I
= 15 mAdc, V  
= 0.5Vdc)  
B(on)  
EB(off)  
r
Figure 1  
Storage Time  
Fall Time  
(V  
= 30 Vdc, I = 150 mAdc,  
t
s
225  
60  
CC  
C
I
= I  
B(off)  
= 15 mAdc)  
B(on )  
t
f
Figure 2  
WEITRON  
http://www.weitron.com.tw  
PZT2222A  
V
CC  
V
i
R2  
90%  
10%  
V
o
R1  
V
i
D.U.T.  
0
t
r
t
p
FIG.1 Input Waveform and Test Circuit for Determining Delay Time and Rise Time  
V = - 0.5 V to +9.9 V , V = +30 V, R1 = 619 , R2 = 200  
.
i
CC  
PULSE GENERATOR:  
PULSE DURATION  
RISE TIME  
OSCILLOSCOPE:  
INPUT IMPEDANCE  
INPUT CAPACITANCE  
RISE TIME  
<
t
t
δ
200 ns  
2 ns  
0.02  
Z
C
>
<
<
100 k  
12 pF  
5 ns  
p
i
<
r
i
DUTY FACTOR  
=
t
r
V
CC  
V
i
+16.2 V  
R2  
D.U.T.  
R1  
V
i
R3  
0
TIME  
Vo  
OSCILLOSCOPE  
D1  
R4  
- 13.8 V  
100ms  
t
f
V
BB  
FIG.2 Input Waveform and Test Circuit for Determining Storage Time and Fall Time  
WEITRON  
http://www.weitron.com.tw  
PZT2222A  
SOT-223 Outline Dimensions  
unit:mm  
MILLIMETERS  
A
F
DIM  
A
B
C
D
F
G
H
J
K
L
MIN  
6.30  
3.30  
1.50  
0.60  
2.90  
2.20  
MAX  
6.70  
3.70  
1.75  
0.89  
3.20  
2.40  
4
S
B
1
2
3
D
0.020 0.100  
L
G
0.24  
1.50  
0.85  
0
0.35  
2.00  
1.05  
10  
J
C
M
M
S
H
K
6.70  
7.30  
WEITRON  
http://www.weitron.com.tw  
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