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FZ1600R12KE3

型号：

FZ1600R12KE3

描述：

IGBT -模块[ IGBT-Module ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

9 页

PDF大小：

176 K

下载PDF手册
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Höchstzulässige Werte / maximum rated values  
Elektrische Eigenschaften / electrical properties  
Kollektor Emitter Sperrspannung  
collector emitter voltage  
Tvj= 25°C  
VCES  
1200  
V
1600  
2300  
A
A
IC, nom  
IC  
Kollektor Dauergleichstrom  
DC collector current  
Tc= 80°C  
Tc= 25°C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tp= 1ms, Tc= 80°C  
ICRM  
3200  
7,8  
A
kW  
V
Gesamt Verlustleistung  
total power dissipation  
Tc= 25°C;Transistor  
Ptot  
Gate Emitter Spitzenspannung  
gate emitter peak voltage  
VGES  
+/- 20  
1600  
3200  
300  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forward current  
tp= 1ms  
IFRM  
A
Grenzlastintegral  
I²t value  
VR= 0V, tp= 10ms, Tvj= 125°C  
RMS, f= 50Hz, t= 1min.  
I²t  
k A²s  
kV  
Isolations Prüfspannung  
insulation test voltage  
VISOL  
2,5  
Charakteristische Werte / characteristic values  
Transistor Wechselrichter / transistor inverter  
min.  
-
-
typ.  
1,7  
2
max.  
2,15  
IC= 1600A, VGE= 15V, Tvj= 25°C,  
V
V
Kollektor Emitter Sättigungsspannung  
collector emitter satration voltage  
VCEsat  
VGE(th)  
QG  
IC= 1600A, VGE= 15V, Tvj= 125°C,  
t.b.d.  
Gate Schwellenspannung  
gate threshold voltage  
IC= 64mA, VCE= VGE, Tvj= 25°C,  
5
-
5,8  
15,4  
115  
5,4  
-
6,5  
V
Gateladung  
gate charge  
VGE= -15V...+15V;VCE= ...V  
-
-
µC  
nF  
nF  
mA  
nA  
Eingangskapazität  
input capacitance  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
Cies  
-
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
-
-
Kollektor Emitter Reststrom  
collector emitter cut off current  
VCE=1200V, VGE= 0V, Tvj= 25°C,  
ICES  
-
5
Gate Emitter Reststrom  
gate emitter leakage current  
VCE= 0V, VGE= 20V, Tvj= 25°C  
IGES  
-
-
400  
prepared by: MOD-D2; Mark Münzer  
approved: SM TM; Christoph Lübke  
date of publication: 2002-07-29  
revision: 2.0  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
1 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Charakteristische Werte / characteristic values  
Transistor Wechselrichter / transistor inverter  
min.  
typ.  
max.  
IC= 1600A, VCC= 600V  
Einschaltverzögerungszeit (ind. Last)  
turn on delay time (inductive load)  
VGE=±15V, RGon=1,6ꢀꢁ Tvj=25°C  
td,on  
-
-
0,60  
0,66  
-
-
µs  
µs  
VGE=±15V, RGon=1,6ꢀ, Tvj=125°C  
IC= 1600A, VCC= 600V  
Anstiegszeit (induktive Last)  
VGE=±15V, RGon=1,6ꢀꢁ Tvj=25°C  
rise time (inductive load)  
tr  
-
-
0,23  
0,22  
-
-
µs  
µs  
VGE=±15V, RGon=1,6ꢀ, Tvj=125°C  
IC= 1600A, VCC= 600V  
Abschaltverzögerungszeit (ind. Last)  
turn off delay time (inductive load)  
VGE=±15V, RGoff=0,2ꢀ, Tvj=25°C  
VGE=±15V,RGoff=0,2ꢀ, Tvj=125°C  
IC= 1600A, VCC= 600V  
td,off  
-
-
0,82  
0,96  
-
-
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
VGE=±15V, RGoff=0,2ꢀ, Tvj=25°C  
tf  
-
-
0,15  
0,18  
-
-
µs  
µs  
VGE=±15V, RGoff=0,2ꢀ, Tvj=125°C  
IC= 1600A, VCC= 600V, L = 45nH  
ꢀ
Einschaltverlustenergie pro Puls  
turn on energy loss per pulse  
Eon  
Eoff  
ISC  
-
-
-
-
-
325  
250  
6400  
12  
-
-
-
-
-
mJ  
mJ  
A
VGE=±15V, RGon=1,6ꢀ, Tvj=125°C  
IC= 1600A, VCC= 600V, L = 45nH  
ꢀ
Ausschaltverlustenergie pro Puls  
turn off energy loss per pulse  
VGE=±15V, RGoff=0,2ꢀ, Tvj=125°C  
tP ? 10µs, VGE ? 15V, TVj ? 125°C  
VCC= 900V, VCEmax= VCES - LꢀCE · ꢁdi/dtꢁꢂ  
Kurzschlussverhalten  
SC data  
Modulindiktivität  
stray inductance module  
L
ꢀCE  
nH  
mꢀ  
Leitungswiderstand, Anschluss-Chip  
lead resistance, terminal-chip  
Tc= 25°C  
RCC´/EE´  
0,19  
Charakteristische Werte / characteristic values  
Diode Wechselrichter / diode inverter  
IF= IC, nom, VGE= 0V, Tvj= 25°C  
-
-
2,2  
2
2,8  
-
V
V
Durchlassspannung  
forward voltage  
VF  
IF= IC, nom, VGE= 0V, Tvj= 125°C  
IF=IC,nom, -diF/dt= 7200A/µs  
Rückstromspitze  
IRM  
515  
800  
A
A
-
-
-
-
VR= 600V, VGE= -15V, T
vj
= 25°C  
VR= 600V, VGE= -15V, Tvj= 125°C  
IF=IC,nom, -diF/dt= 7200A/µs  
peak reverse recovery current  
Sperrverzögerungsladung  
recoverred charge  
Qr  
75  
µC  
µC  
-
-
-
-
VR= 600V, VGE= -15V, Tvj= 25°C  
VR= 600V, VGE= -15V, Tvj= 125°C  
IF=IC,nom, -diF/dt= 7200A/µs  
180  
Ausschaltenergie pro Puls  
reverse recovery energy  
Erec  
18  
47  
mJ  
mJ  
-
-
-
-
VR= 600V, VGE= -15V, Tvj= 25°C  
VR= 600V, VGE= -15V, Tvj= 125°C  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
2 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Thermische Eigenschaften / thermal properties  
min.  
typ.  
max.  
pro Transistor /per transistor, DC  
Innerer Wärmewiderstand  
RthJC  
RthJC  
-
-
0,016  
K/W  
K/W  
pro Diode/per Diode, DC  
-
-
0,032  
thermal resistance, junction to case  
pro Modul / per module  
Paste/ꢃgrease =1W/m*K  
Übergangs Wärmewiderstand  
RthCK  
Tvj max  
Tvj op  
Tstg  
-
0,006  
-
K/W  
°C  
ꢃ
thermal resistance, case to heatsink  
Höchstzulässige Sperrschichttemp.  
maximum junction temperature  
-
-
-
-
150  
125  
125  
Betriebstemperatur  
operation temperature  
-40  
-40  
°C  
Lagertemperatur  
storage temperature  
°C  
Mechanische Eigenschaften / mechanical properties  
Gehäuse, siehe Anlage  
case, see appendix  
Innere Isolation  
internal insulation  
Al2O3  
Kriechstrecke  
32  
mm  
mm  
creepage distance  
Luftstrecke  
clearance  
20  
CTI  
>400  
comperative tracking index  
Anzugsdrehmoment, mech. Befestigung  
Schraube / screw M5  
M
M
M
G
4,25  
1,7  
8
-
5,75  
2,3  
10  
Nm  
Nm  
Nm  
g
mounting torque  
Anzugsdrehmoment, elektr. Anschlüsse  
Anschlüsse / terminal M4  
-
-
terminal connection torque  
Anschlüsse / terminal M8  
Gewicht  
weight  
1500  
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine  
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.  
This technical information specifies semiconductor devices but promises no characteristics. It is valid  
with the belonging technical notes.  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
3 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Ausgangskennlinie (typisch)  
output characteristic (typical)  
IC= f(VCE)  
V
GE
= 15V  
3200  
Tvj = 25°C  
Tvj = 125°C  
2800  
2400  
2000  
1600  
1200  
800  
400  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
VCE [V]  
Ausgangskennlinienfeld (typisch)  
output characteristic (typical)  
IC= f(VCE)  
T
vj
= 125°C  
3200  
Vge=19V  
Vge=17V  
2800  
Vge=15V  
Vge=13V  
2400  
Vge=11V  
Vge=9V  
2000  
1600  
1200  
800  
400  
0
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
VCE [V]  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
4 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
IC= f(VGE)  
V
CE
= 20V  
Übertragungscharakteristik (typisch)  
transfer characteristic (typical)  
3200  
2800  
Tvj=25°C  
Tvj=125°C  
2400  
2000  
1600  
1200  
800  
400  
0
5
6
7
8
9
10  
11  
12  
13  
VGE [V]  
IF= f(VF)  
Durchlasskennlinie der Inversdiode (typisch)  
forward caracteristic of inverse diode (typical)  
3200  
2800  
Tvj = 25°C  
Tvj = 125°C  
2400  
2000  
1600  
1200  
800  
400  
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0  
VF [V]  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
5 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)  
VGE=±15V, Rgon=1,6ꢀ, Rgoff=0,2ꢀ, VCE=600V, Tvj=125°C  
Schaltverluste (typisch)  
Switching losses (typical)  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
Eon  
Eoff  
Erec  
0
400  
800  
1200  
1600  
2000  
2400  
2800  
3200  
IC [A]  
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)  
VGE=±15V, IC=1600A, VCE=600V, Tvj=125°C  
Schaltverluste (typisch)  
Switching losses (typical)  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
Eon  
Eoff  
Erec  
0
2
4
6
8
10  
12  
RG [ꢀ]  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
6 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Transienter Wärmewiderstand  
Transient thermal impedance  
ZthJC = f (t)  
0,1  
0,01  
Zth : IGBT  
Zth : Diode  
0,001  
0,001  
0,01  
0,1  
1
10  
t [s]  
i
1
2
3
4
ri [K/kW] : IGBT  
1,91  
6,27  
6,17  
1,65  
ꢁ [s] : IGBT  
6,897E-01  
9,18  
4,452E-01  
5,634E-02  
10,08  
7,451E-02  
2,997E-02  
10,58  
2,647E-02  
3,820E-03  
2,16  
2,850E-03  
i
ri [K/kW] : Diode  
ꢁ [s] : Diode  
i
Sicherer Arbeitsbereich (RBSOA)  
Reverse bias safe operation area (RBSOA)  
VGE=15V, Tj=125°C  
4000  
3600  
IC,Chip  
3200  
2800  
2400  
2000  
1600  
IC,Chip  
1200  
800  
400  
0
0
200  
400  
600  
800  
1000  
1200  
1400  
VCE [V]  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
7 (8)  
Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FZ1600R12KE3  
vorläufige Daten  
preliminary data  
Gehäusemaße / Schaltbild  
Package outline / Circuit diagram  
61.5  
± 0.3  
18 ±0.2  
C
(K)  
C
(K)  
E
(A)  
E
(A)  
130  
114 ±±00..51  
DD...  
29.5  
± 0.5  
C
C
C
G
M8  
28.25  
14.75  
18.25  
±0.5  
±0.5  
E
E
E
C
C
E
FD...  
±0.5  
C
E
C
14 ± 0.5  
C
M
E
8 ±0.3  
G
E
C
E
G
E
external connection  
(to be done)  
4.0 tief  
2.5 tief  
2+0.2  
± 0.5  
10.65  
48.8  
10.35  
± 0.2  
±0.2  
± 0.2  
+0.1 (für M6-Schraube)  
ø7  
28  
FZ...  
IH4  
DB_FZ1600R12KE3_2.0.xls  
2002-07-29  
8 (8)  
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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