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DZT851

型号:

DZT851

描述:

NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

4 页

PDF大小:

180 K

SPICE MODELS: DZT851  
DZT851  
NPN SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DZT951)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Mechanical Data  
SOT-223  
Case: SOT-223  
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
COLLECTOR  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Matte Tin annealed over Copper Leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
BASE  
Marking & Type Code Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.115 grams (approximate)  
EMITTER  
TOP VIEW  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
150  
60  
Unit  
V
V
V
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
6
Continuous Collector Current  
6
1(Note 3)  
3(Note 4)  
Power Dissipation  
W
Ptot  
Operating and Storage Temperature Range  
-55 to +150  
°C  
Tj, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4.  
4. The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum.  
DS30738 Rev. 3 - 2  
1 of 4  
DZT851  
© Diodes Incorporated  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
150  
60  
6
V
V
V
IC = 100μA, IE = 0  
IC = 10mA*, IB = 0  
IE = 100μA, IC = 0  
nA  
μA  
VCB = 120V, IE = 0  
VCB = 120V, IE = 0, TA = 100°C  
50  
1
Collector Cutoff Current  
ICBO  
IEBO  
Emitter Cutoff Current  
10  
nA  
VEB = 6V, IC = 0  
ON CHARACTERISTICS  
50  
IC = 0.1A, IB = 5mA*  
IC = 1A, IB = 50mA*  
IC = 2A, IB = 50mA*  
IC = 6A, IB = 300mA*  
100  
170  
375  
Collector-Emitter Saturation Voltage  
VCE(SAT)  
mV  
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
VBE(SAT)  
VBE(ON)  
1200  
1150  
mV IC = 6A, IB = 300mA*  
mV ICE = 6A, VCE = 1V*  
IC = 10mA, VCE = 1V*  
300  
100  
100  
75  
IC = 2A, VCE = 1V*  
IC = 5A, VCE = 1V*  
DC Current Gain  
hFE  
25  
IC = 10A, VCE = 1V*  
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Output Capacitance  
IC = 100mA, VCE = 10V,  
f = 50MHz  
fT  
130  
45  
MHz  
Cobo  
pF  
ns  
VCB = 10V, f = 1MHz  
IC = 1A, IB1 = 100mA  
ton  
toff  
45  
1100  
Switching Times  
IB2 = 100mA, VCC = 10V  
*
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%  
Typical Characteristics @Tamb = 25°C unless otherwise specified  
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)  
Fig. 2 Collector Current vs. Collector Emitter Voltage  
Notes:  
3. Device mounted on FR-4 PCB, pad layout as shown on page 4.  
DS30738 Rev. 3 - 2  
2 of 4  
DZT851  
© Diodes Incorporated  
www.diodes.com  
Fig. 3 Typical DC Current Gain vs. Collector Current  
Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current  
Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current  
Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current  
Ordering Information (Note 5)  
Packaging  
SOT-223  
Shipping  
Device  
2500/Tape & Reel  
DZT851-13  
Notes:  
5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf.  
Marking Information  
DZT851 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
Date Code Key  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Year  
T
U
V
W
X
Y
Z
Code  
Aug  
Sep  
Oct  
Nov  
Dec  
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
8
9
O
N
D
1
2
3
4
5
6
7
DS30738 Rev. 3 - 2  
3 of 4  
www.diodes.com  
DZT851  
© Diodes Incorporated  
Package Outline Dimensions  
SOT-223  
Dim Min Max Typ  
A
1.55 1.65 1.60  
A1 0.010 0.15 0.05  
b1  
b2  
C
2.90 3.10 3.00  
0.60 0.80 0.70  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
D
E
E1  
e
4.60  
2.30  
e1  
L
0.85 1.05 0.95  
0.84 0.94 0.89  
Q
All Dimensions in mm  
Suggested Pad Layout: (Based on IPC-SM-782)  
(Unit:mm)  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30738 Rev. 3 - 2  
4 of 4  
DZT851  
© Diodes Incorporated  
www.diodes.com  
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