Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Test Conditions
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 150°C
VCE = -30V, VEB(OFF) = -0.5V
VCE = -30V, VEB(OFF) = -0.5V
IC = -10 μA, IE = 0
-0.01
-10
-50
-50
⎯
⎯
⎯
⎯
Collector-Base Cutoff Current
ICBO
μA
Collector Cutoff Current
Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
nA
nA
V
V
V
ICEX
IBL
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
-60
-60
-5
⎯
⎯
I
I
C = -10 mA, IB = 0
E = -10 μA, IC = 0
-0.4
-1.6
⎯
⎯
⎯
V
V
⎯
⎯
75
100
100
100
50
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
V
CE = -10V, IC = -100μA
CE = -10V, IC = -1mA
CE = -10V, IC = -10mA
CE = -10V, IC = -150mA
CE = -10V, IC = -500mA
DC Current Gain
hFE
300
⎯
-1.3
-2.6
⎯
⎯
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
200
⎯
⎯
MHz
pF
pF
fT
Cobo
Cibo
⎯
8
30
VCE = -20V, IC = -50mA, f = 100MHz
VCB = -10V, IE = 0A, f =1MHz
VEB = -2V, IC = 0A, f =1MHz
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
ton
td
tr
toff
ts
⎯
⎯
⎯
⎯
⎯
⎯
V
V
= -30V, I = -150mA, I = -15mA
C B1
CC
CC
= -6V, I = -150mA, I = I = -15mA
C
B1
B2
Fall Time
tf
Notes:
5. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< =0.02
Typical Characteristics @TA = 25°C unless otherwise specified
1.0
0.8
0.6
0.4
0.2
0
0
150
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
75
100
125
0
50
-VCE, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current as a
Function of Collector Emitter Voltage
DS30921 Rev. 5 - 2
2 of 4
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