Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Conditions
75
40
6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
10
10
10
10
IC = 10μA, IE = 0
IC = 10mA, IB = 0
IE = 10μA, IC = 0
V
nA
μA
nA
nA
⎯
⎯
⎯
⎯
V
V
V
V
CB = 50V, IE = 0
Collector Cut-Off Current
ICBO
CB = 50V, IE = 0, TA = 150°C
EB = 3V, IC = 0
Emitter Cut-Off Current
IEBO
ICEX
Collector-Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
CE = 60V, VEB(off) = 3V
0.3
1.0
1.2
2.0
⎯
⎯
⎯
⎯
300
V
V
V
V
⎯
⎯
0.6
IC = 150mA, IB = 15mA
C = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
C = 500mA, IB = 50mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
I
⎯
I
35
50
75
35
100
50
40
IC = 0.1mA, VCE = 10V
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V
DC Current Gain
V
hFE
IC = 10mA, VCE = 10V, TA = -55°C
I
C = 150mA, VCE = 10V
⎯
⎯
I
I
C = 150mA, VCE = 1V
C = 500mA, VCE = 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Delay Time
300
⎯
⎯
MHz
pF
fT
⎯
8
I
C = 20mA, VCE = 20V, f = 100MHz
Cobo
Cibo
V
V
CB = 10V, IE = 0, f = 1MHz
EB = 0.5V, IC = 0, f = 1MHz
25
pF
10
25
ns
ns
ns
ns
td
tr
⎯
⎯
⎯
⎯
VCE = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA
VCE = 30V, IC = 150mA, IB1 = IB2 = 15mA
Rise Time
Storage Time
225
60
ts
tf
Fall Time
Notes:
4. Measured under pulsed conditions. Pulse width = 300 μS. Duty Cycle, d< = 2%.
R
= 125°C/W
JA
θ
VCE, COLLECTOR EMITTER VOLTAGE (V)
DZT2222A
© Diodes Incorporated
DS30481 Rev. 5 - 2
2 of 4
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