DZT491
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
3
2
1
Complementary PNP Type Available (DZT591C)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
COLLECTOR
3 E
2 C
2,4
•
•
C 4
1
BASE
•
•
•
B
1
3
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Symbol
Value
80
60
5
1
2
Unit
V
V
V
A
A
mA
W
VCBO
VCEO
VEBO
IC
ICM
IB
200
1
Power Dissipation (Note 3)
Pd
Operating and Storage Temperature Range
-55 to +150
Tj, TSTG
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Symbol Min Typ
Max
Unit
Test Conditions
100
100
100
⎯
⎯
⎯
nA
nA
nA
V
V
V
ICBO
IEBO
⎯
⎯
⎯
80
60
5
⎯
⎯
⎯
⎯
⎯
⎯
VCB = 60V
VEB = 4V
VCES = 60V
IC = 100μA
IC = 10mA
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
ICES
V(BR)CBO
V(BR)CEO
V(BR)EBO
IE = 100μA
0.25
0.5
⎯
V
V
⎯
⎯
100
100
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯
⎯
⎯
V
V
V
V
V
CE = 5V, IC = 1mA
CE = 5V, IC = 500mA
CE = 5V, IC = 1A
CE = 5V, IC = 2A
300
DC Current Gain
hFE
⎯
⎯
1.1
1
30
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
VBE(SAT)
VBE(on)
⎯
⎯
IC = 1A, IB = 100mA
IC = 1A, VCE = 5V
V
150
MHz
pF
fT
Cobo
⎯
⎯
⎯
10
V
CE = 10V, IC = 50mA, f = 100MHz
⎯
VCB = 10V, IE = 0A, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms duty cycle ≤ 2%
DS30946 Rev. 3 - 2
1 of 4
DZT491
© Diodes Incorporated
www.diodes.com
