DZT5401
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
3
2
1
Complementary NPN Type Available (DZT5551)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 3)
4
SOT-223
Mechanical Data
COLLECTOR
2,4
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
3 E
2 C
C 4
1
•
•
BASE
B
1
3
EMITTER
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•
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TOP VIEW
Schematic and Pin Configuration
Weight: 0.112 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Value
-160
-150
-5.0
Unit
V
VCBO
VCEO
VEBO
IC
V
V
Collector Current
-600
mA
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C (Note 3)
Symbol
PD
Value
1
Unit
W
125
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3)
Operating and Storage Temperature Range
°C/W
°C
Rθ
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
-160
-150
-5.0
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
I
I
I
C = -100μA, IE = 0
C = -1.0mA, IB = 0
E = -10μA, IC = 0
Emitter-Base Breakdown Voltage
nA
μA
nA
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 150°C
VEB = -3.0V, IC = 0
Collector Cutoff Current
-50
-50
ICBO
IEBO
⎯
⎯
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
IC = -1.0mA, VCE = -5.0V
50
60
50
⎯
240
⎯
DC Current Gain
hFE
⎯
IC
IC
=
=
-10mA, VCE = -5.0V
-50mA, VCE = -5.0V
IC = -10mA, IB = -1.0mA
C = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
C = -50mA, IB = -5.0mA
-0.2
-0.5
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
I
-1.0
I
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
6.0
200
300
8.0
pF
⎯
MHz
Cobo
hfe
fT
⎯
40
100
⎯
VCB = -10V, f = 1.0MHz, IE = 0
V
V
V
CE = -10V, IC = -1.0mA, f = 1.0kHz
CE = -10V, IC = -10mA, f = 100MHz
CE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz
NF
dB
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.
DS31218 Rev. 2 – 2
1 of 4
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DZT5401
© Diodes Incorporated
