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FZ1200R12KF4

型号：

FZ1200R12KF4

描述：

晶体管[ Transistor ]

品牌：

EUPEC[ EUPEC GMBH ]

页数：

5 页

PDF大小：

211 K

下载PDF手册
European Power-  
Semiconductor and  
Electronics Company  
GmbH + Co. KG  
Marketing Information  
FZ 1200 R 12 KF 4  
61,5  
M8  
18  
screwing depth  
max. 8  
130  
31,5  
114  
C
C
E
E
E
G
C
16,5  
7
M4  
2,5  
28  
18,5  
external connection to be  
done  
C
C
C
G
E
E
E
external connection to be  
done  
A15/97 Mod-E/ 21.Jan 1998 G.Schulze  
FZ 1200 R 12 KF4  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
Kollektor-Dauergleichstrom  
Periodischer Kollektor Spitzenstrom  
Gesamt-Verlustleistung  
collector-emitter voltage  
VCES  
IC  
1200 V  
1200 A  
2400 A  
7800 W  
± 20 V  
1200 A  
2400 A  
2,5 kV  
DC-collector current  
repetitive peak collctor current  
total power dissipation  
gate-emitter peak voltage  
DC forward current  
tp=1 ms  
ICRM  
Ptot  
VGE  
IF  
tC=25°C, Transistor /transistor  
Gate-Emitter-Spitzenspannung  
Dauergleichstrom  
Periodischer Spitzenstrom  
Isolations-Prüfspannung  
repetitive peak forw. current  
insulation test voltage  
tp=1ms  
IFRM  
VISOL  
RMS, f=50 Hz, t= 1 min.  
Charakteristische Werte / Characteristic values: Transistor  
min.  
typ.  
2,7  
3,3  
5,5  
90  
16  
100  
-
max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
iC=1,2kA, vGE=15V, tvj=25°C  
iC=1,2kA, vGE=15V, tvj=125°C  
iC=48mA, vCE=vGE, tvj=25°C  
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V  
vCE=1200V, vGE=0V, tvj=25°C  
vCE=1200V, vGE=0V, tvj=125°C  
vCE=0V, vGE=20V, tvj=25°C  
vCE=0V, vEG=20V, tvj=25°C  
iC=1,2kA,vCE=600V  
vCE sat  
-
3,2 V  
3,9 V  
6,5 V  
- nF  
-
Gate-Schwellenspannung  
Eingangskapazität  
gate threshold voltage  
input capacity  
vGE(th)  
Cies  
4,5  
-
-
-
-
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
iCES  
- mA  
200 mA  
400 nA  
400 nA  
Gate-Emitter Reststrom  
Emitter-Gate Reststrom  
Einschaltzeit (induktive Last)  
gate leakage current  
iGES  
iEGS  
ton  
gate leakage current  
-
turn-on time (inductive load)  
vL = ±15V, RG = 0,82 , tvj=25°  
vL = ±15V, RG = 0,82 , tvj=125°  
iC=1,2kA,vCE=600V  
0,7  
0,8  
- µs  
- µs  
-
Speicherzeit (induktive Last)  
Fallzeit (induktive Last)  
storage time (inductive load)  
fall time (inductive load)  
ts  
vL = ±15V, RG = 0,82 , tvj=25°  
vL = ±15V, RG = 0,82 , tvj=125°  
iC=1,2kA,vCE=600V  
-
-
0,9  
1,0  
- µs  
- µs  
tf  
vL = ±15V, RG = 0,82 , tvj=25°  
vL = ±15V, RG = 0,82 , tvj=125°  
iC=1,2kA, vCE=600V, Ls=70nH  
vL=±15V,RG=0,82 ,Tvj=125°C  
iC=1,2kA, vCE=600V, Ls=70nH  
vL=±15V,RG=0,82 ,Tvj=125°C  
-
-
0,10  
0,15  
- µs  
- µs  
Einschaltverlustenergie pro Puls  
Abschaltverlustleistung pro Puls  
turn-on energy loss per puls  
turn-off energy loss per puls  
Eon  
Eoff  
-
170  
190  
- mWs  
- mWs  
-
Charakteristische Werte / Characteristic values  
Inversdiode / Inverse diode  
Durchlaßspannung  
forward voltage  
iF=1,2kA, vGE=0V, tvj=25°C  
iF=1,2kA, vGE=0V, tvj=125°C  
iF=1,2kA, vRM=600V, vEG = 10V  
-diF/dt = 6 kA/µs, tvj = 25°C  
vF  
-
-
2,2  
2,0  
2,7 V  
2,5 V  
Rückstromspitze  
peak reverse recovery current  
IRM  
-
-
400  
700  
- A  
- A  
= 125°C  
tvj  
Sperrverzögerungsladung  
recovered charge  
iF=1,2kA, vRM=600V, vEG = 10V  
-diF/dt = 6 kA/µs, tvj = 25°C  
Qr  
-
-
50  
- µAs  
150  
- µAs  
= 125°C  
tvj  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
Transistor / transistor, DC  
Transistor,DC,pro Zweig/per arm  
pro Modul / per Module  
pro Modul / per Module  
Transistor / transistor  
RthJC  
0,016 °C/W  
0,032 °C/W  
0,008 °C/W  
150 °C  
Übergangs-Wärmewiderstand  
Höchstzul. Sperrschichttemperatur  
Betriebstemperatur  
thermal resistance, case to heatsink  
max. junction temperature  
operating temperature  
RthCK  
tvj max  
tc op  
-40...+125 °C  
-40...+125 °C  
Lagertemperatur  
storage temperature  
tstg  
Mechanische Eigenschaften / Mechanical properties  
Innere Isolation  
internal insulation  
AI2O3  
5 Nm  
Anzugsdrehmoment f. mech. Befestigung  
Anzugsdrehmoment f. elektr. Anschlüsse  
mounting torque  
terminals M6 / tolerance +/-15%  
terminals M4 / tolerance +/-15%  
terminals M8  
M1  
M2  
terminal connection torque  
2 Nm  
8...10 Nm  
ca. 1500 g  
Gewicht  
weight  
G
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection  
tfg = 10 µs  
VCC = 750 V  
vL = ±15 V  
RGF = RGR = 0,82  
tvj = 125°C  
vCEM = 900 V  
iCMK1 10000 A  
iCMK2 8000 A  
vCEM  
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions  
= VCES - 15nH x |di /dt|  
c
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den  
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in  
combination with the belonging technical notes.  
FZ 1200 R12 KF4  
2500  
2000  
1500  
1000  
500  
2500  
2000  
1500  
1000  
500  
15V  
V
=20V  
GE  
12V  
i
i
C
[ ]  
A
C
[
]
A
10V  
9V  
8V  
0
0
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
v
4.5  
5.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
v
4.5  
5.0  
[
V
]
[
V
]
FZ1200R12KF4  
FZ1200R12KF4  
CE  
CE  
Bild/Fig. 1  
Bild/Fig. 2  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)  
Collector-emitter-voltage in saturation region (typical)  
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)  
Collector-emitter-voltage in saturation region (typical)  
Tvj = 125 °C  
V
= 15V  
GE  
----- T = 25 °C  
vj  
___  
Tvj = 125 °C  
2500  
2000  
2500  
t
=
vj  
i
[
C
A
125 °C  
25 °C  
]
i
C
2000  
[
]
A
1500  
1000  
500  
0
1500  
1000  
500  
0
6
8
9
10  
11  
12  
5
7
400  
600  
800  
0
200  
1000  
v
1200  
1400  
[
V
]
[
]
v
V
FZ1200R12KF4  
GE  
FZ1200R12KF4  
CE  
Bild/Fig. 3  
Übertragungscharakteristik (typisch)  
Transfer characteristic (typical)  
Bild/Fig. 4  
Rückwärts-Arbeitsbereich  
Reverse biased safe operating area  
= 125 °C, v = v = 15 V, R = 0,82  
V
= 20 V  
t
CE  
vj  
LF LR  
G
FZ 1200 R12 KF4  
-1  
10  
2500  
2000  
1500  
1000  
500  
6
Z
(th)JC  
[°C/W]  
i
F
[
]
Diode  
IGBT  
A
3
2
-2  
10  
5
3
2
-3  
0
0.5  
10  
-3  
-2  
-1  
0
1
10  
2
4
10  
2
4
10  
2
4
10  
2
4
10  
1.0  
1.5  
2.0  
2.5  
3.0  
[ ]  
s
[
]
V
t
v
FZ1200R12KF4  
FZ1200R12KF4  
F
Bild/Fig. 5  
Bild/Fig. 6  
Durchlaßkennlinie der Inversdiode (typisch)  
Forward characteristic of the inverse diode (typical)  
Transienter innerer Wärmewiderstand (DC)  
Transient thermal impedance (DC)  
t
t
=
25 °C  
vj  
vj  
= 125 °C  
Terms & Conditions of Usage  
Attention  
The present product data is exclusively subscribed to technically experienced  
staff. This Data Sheet is describing the specification of the products for which a  
warranty is granted exclusively pursuant the terms and conditions of the supply  
agreement. There will be no guarantee of any kind for the product and its  
specifications. Changes to the Data Sheet are reserved.  
You and your technical departments will have to evaluate the suitability of the  
product for the intended application and the completeness of the product data  
with respect to such application. Should you require product information in  
excess of the data given in the Data Sheet, please contact your local Sales Office  
via “www.eupec.com / sales & contact”.  
Warning  
Due to technical requirements the products may contain dangerous substances.  
For information on the types in question please contact your local Sales Office via  
“www.eupec.com / sales & contact”.  
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