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IXYH80N90C3

型号：

IXYH80N90C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

183 K

下载PDF手册
XPTTM 900V IGBT  
GenX3TM  
VCES = 900V  
IC110 = 80A  
VCE(sat)  2.7V  
tfi(typ) = 86ns  
IXYT80N90C3  
IXYH80N90C3  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-268 (IXYT)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TJ = 25°C to 175°C  
900  
900  
V
V
TJ = 25°C to 175°C, RGE = 1M  
TO-247 (IXYH)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
ILRMS  
IC110  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
165  
160  
80  
A
A
A
G
C
C (Tab)  
ICM  
TC = 25°C, 1ms  
360  
A
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
Clamped Inductive Load  
ICM = 160  
A
G = Gate  
E = Emiiter  
C
= Collector  
(RBSOA)  
@VCE VCES  
Tab = Collector  
PC  
TC = 25°C  
830  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
International Standard Packages  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
950  
3.5  
Typ.  
Max.  
High Power Density  
Low Gate Drive Requirement  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
5.5  
Applications  
25 A  
TJ = 150C  
TJ = 150C  
750 A  
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
2.3  
2.9  
2.7  
V
V
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100446B(12/15)  
IXYT80N90C3  
IXYH80N90C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
23  
38  
S
Cies  
Coes  
Cres  
4550  
243  
77  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
145  
42  
nC  
nC  
nC  
IC = 80A, VGE = 15V, VCE = 0.5 • VCES  
65  
Terminals: 1 - Gate  
3 - Emitter  
2,4 - Collector  
td(on)  
tri  
Eon  
td(off)  
tfi  
34  
103  
4.3  
90  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2  
86  
ns  
Note 2  
Eof  
1.9  
2.7  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
34  
100  
5.7  
103  
98  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 80A, VGE = 15V  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2  
ns  
Note 2  
Eoff  
2.5  
mJ  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
TO-247  
0.21  
TO-247 Outline  
P  
1
2
3
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
e
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYT80N90C3  
IXYH80N90C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
160  
140  
120  
100  
80  
V
= 15V  
GE  
V
= 15V  
300  
250  
200  
150  
100  
50  
14V  
GE  
14V  
13V  
12V  
13V  
11V  
10V  
12V  
60  
11V  
9V  
40  
10V  
20  
8V  
7V  
9V  
7V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
4
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
160  
140  
120  
100  
80  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
I
= 160A  
C
11V  
I
= 80A  
C
10V  
9V  
60  
40  
8V  
6V  
I = 40A  
C
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
7
6
5
4
3
2
1
T
= 25ºC  
J
I
= 160A  
C
T
= 150ºC  
25ºC  
J
- 40ºC  
80A  
40A  
60  
40  
20  
0
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
12  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYT80N90C3  
IXYH80N90C3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 450V  
IC = 80A  
I
G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
T
= 150ºC  
40  
J
C
res  
R
= 2  
Ω
G
20  
dv / dt < 10V / ns  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
500  
600  
700  
800  
900  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1000  
100  
10  
1
V
Limit  
CE(sat)  
0.1  
25µs  
100µs  
1ms  
0.01  
1
T
= 175ºC  
= 25ºC  
J
T
C
10ms  
DC  
Single Pulse  
0.1  
0.001  
0.00001  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width - Seconds  
IXYT80N90C3  
IXYH80N90C3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
12  
10  
8
5
4
3
2
1
0
10  
8
E
T
E
on - - - -  
E
R
E
on - - - -  
off  
off  
= 150ºC , V = 15V  
GE  
= 2  
V
Ω  
= 15V  
GE  
J
G
V
= 450V  
V
= 450V  
CE  
CE  
6
I
= 80A  
C
6
T
J
= 150ºC  
4
4
T
J
= 25ºC  
2
2
I
= 40A  
C
0
0
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
250  
225  
200  
175  
150  
125  
100  
75  
360  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
E
R
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
320  
280  
240  
200  
160  
120  
80  
= 2  
V
Ω  
GE = 15V  
T
J
= 150ºC, V = 15V  
GE  
G
VCE = 450V  
V
= 450V  
CE  
IC = 80A  
I
= 40A  
C
I
= 80A  
C
IC = 40A  
50  
40  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
200  
175  
150  
125  
100  
75  
180  
160  
140  
120  
100  
80  
225  
200  
175  
150  
125  
100  
75  
150  
140  
130  
120  
110  
100  
90  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
R
G
= 2 , V = 15V  
Ω  
GE  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 450V  
CE  
V
= 450V  
CE  
I
= 40A  
C
T = 150ºC  
J
T = 25ºC  
J
I
= 80A  
C
50  
80  
25  
70  
50  
60  
40  
50  
60  
70  
80  
90  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYT80N90C3  
IXYH80N90C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
160  
140  
120  
100  
80  
40  
38  
36  
34  
32  
30  
28  
26  
180  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
t r i  
t r i  
t
d(on) - - - -  
R
G
= 2 , V = 15V  
Ω  
GE  
T
= 150ºC, V = 15V  
GE  
J
T
J
= 25ºC, 150ºC  
V
= 450V  
CE  
V
= 450V  
CE  
I
= 80A  
C
I
= 40A  
C
60  
60  
40  
40  
20  
20  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
t r i  
t
d(on) - - - -  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 450V  
CE  
I
= 80A  
C
60  
40  
I
= 40A  
C
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_80N90C3(7D) 02-16-12  
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