IXYF30N450
ISOPLUS i4-PakTM (HV) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfS
IC = 30A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
Cies
Coes
Cres
1840
83
pF
pF
pF
35
Qg
88
11
40
nC
nC
nC
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 1000V
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
38
318
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
Pin 1 = Gate
IC = 30A, VGE = 15V
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
168
VCE = 960V, RG = 15
1220
42
590
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 30A, VGE = 15V
180
VCE = 960V, RG = 15
1365
RthJC
RthCS
0.54 °C/W
°C/W
0.15
Notes:
1. Pulse test, t < 300s, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute
a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
