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IXYH20N65B3

型号：

IXYH20N65B3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

270 K

下载PDF手册
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM  
VCES = 650V  
IC110 = 20A  
VCE(sat)  2.10V  
tfi(typ) = 87ns  
IXYA20N65B3  
IXYP20N65B3  
IXYH20N65B3  
Extreme Light Punch Through  
IGBT for 5-30kHz Switching  
TO-263 (IXYA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 (IXYP)  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
58  
20  
108  
A
A
A
TO-247 AD (IXYH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
200  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 20  
Clamped Inductive Load  
ICM = 40  
A
μs  
W
G
C
E
C (Tab)  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
5
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
230  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 5-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
International Standard Packages  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247 & TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
10 A  
150 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
1.77  
2.05  
2.10  
V
V
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100644(02/15)  
IXYA20N65B3 IXYP20N65B3  
IXYH20N65B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-220 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
8.5  
14  
S
Cies  
Coes  
Cres  
826  
66  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
19  
Qg(on)  
Qge  
Qgc  
29  
6
nC  
nC  
nC  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
14  
td(on)  
tri  
Eon  
td(off)  
tfi  
12  
25  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20A, VGE = 15V  
0.50  
103  
87  
mJ  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
ns  
ns  
VCE = 400V, RG = 20  
Note 2  
Eof  
0.45  
0.70 mJ  
f
td(on)  
tri  
13  
26  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
tfi  
0.93  
124  
147  
0.76  
mJ  
ns  
VCE = 400V, RG = 20  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
RthCS  
0.65 °C/W  
°C/W  
TO-220  
TO-247  
0.50  
0.21  
TO-247 Outline  
°C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
TO-263 Outline  
1 - Gate  
2,4 - Collector  
3 - Emitter  
1 = Gate  
2 = Collector  
3 = Emitter  
4 = Collector  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYA20N65B3 IXYP20N65B3  
IXYH20N65B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
V
= 15V  
GE  
120  
100  
80  
60  
40  
20  
0
13V  
12V  
11V  
V
= 15V  
GE  
10V  
9V  
14V  
13V  
12V  
11V  
10V  
9V  
8V  
7V  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
40  
35  
30  
25  
20  
15  
10  
5
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
9V  
I = 40A  
C
I
= 20A  
C
8V  
7V  
6V  
I
= 10A  
C
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6
5
4
3
2
1
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 25ºC  
I
= 40A  
C
T
J
= 150ºC  
25ºC  
- 40ºC  
20A  
10A  
10  
0
4
5
6
7
8
9
10  
7
8
9
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA20N65B3 IXYP20N65B3  
IXYH20N65B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
T
J
= - 40ºC  
V
= 10V  
CE  
VCE = 325V  
I
I
C = 20A  
G = 10mA  
25ºC  
150ºC  
6
4
4
2
0
0
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
= 1 MHz  
f
40  
30  
20  
10  
0
C
C
ies  
oes  
T
J
= 150ºC  
R
G
= 20  
Ω
dv / dt < 10V / ns  
C
res  
10  
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1
1000  
100  
10  
V
Limit  
CE(sat)  
D = 0.5  
D = 0.2  
25µs  
0.1  
D = 0.1  
100µs  
D = tp / T  
D = 0.05  
t
p
D = 0.02  
D = 0.01  
1
T
= 175ºC  
= 25ºC  
J
T
1ms  
Single Pulse  
T
C
Single Pulse  
10ms  
1000  
DC  
0.01  
0.1  
1.E-06  
1.E-05  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1
10  
100  
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYA20N65B3 IXYP20N65B3  
IXYH20N65B3  
Fig. 14. Inductive Switching Energy Loss vs.  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.2  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
= 15V  
off  
E
E
on - - - -  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
off  
R
= 20  
V
Ω ,  
G
GE  
T = 150ºC , V = 15V  
J
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T = 150ºC  
J
I
= 40A  
C
T = 25ºC  
J
I
= 20A  
C
10  
20  
25  
15  
20  
25  
30  
35  
40  
20  
25  
10  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
200  
180  
160  
140  
120  
100  
80  
420  
360  
300  
240  
180  
120  
60  
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
R
= 20  
VGE = 15V  
Ω ,  
T = 150ºC, V = 15V  
G
J
GE  
VCE = 400V  
V
= 400V  
CE  
I
= 40A  
C
I
= 20A  
C
I
= 40A  
C
IC = 20A  
60  
0
30  
40  
50  
60  
70  
80  
90  
100  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
180  
160  
140  
120  
100  
80  
140  
130  
120  
110  
100  
90  
240  
200  
160  
120  
80  
210  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
180  
150  
120  
90  
R
G
= 20 , V = 15V  
Ω
GE  
R
G
= 20 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 20A  
C
T = 150ºC  
J
T = 25ºC  
J
I = 40A  
C
40  
60  
60  
80  
0
30  
50  
75  
100  
125  
150  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA20N65B3 IXYP20N65B3  
IXYH20N65B3  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
17  
t r i  
td(on)  
- - - -  
t r i  
t
d(on) - - - -  
16  
15  
14  
13  
12  
11  
10  
R
G
= 20 , V = 15V  
Ω
T = 150ºC, V = 15V  
J
GE  
GE  
I
= 40A  
C
V
= 400V  
V
= 400V  
CE  
CE  
T = 150ºC  
J
I
= 20A  
C
T = 25ºC  
J
60  
40  
20  
0
20  
30  
40  
50  
60  
70  
80  
90  
100  
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
18  
t r i  
t
d(on) - - - -  
17  
16  
15  
14  
13  
12  
11  
10  
R
G
= 20 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 40A  
C
I
= 20A  
C
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_20N65B3D1(3D-Y42) 02-15-2015  
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