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IXYA50N65C3-TRL

型号：

IXYA50N65C3-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

263 K

下载PDF手册
Preliminary Technical Information  
XPTTM 650V IGBT  
GenX3TM  
VCES = 650V  
IC110 = 50A  
VCE(sat)  2.10V  
tfi(typ) = 26ns  
IXYA50N65C3  
IXYP50N65C3  
IXYH50N65C3  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-263 (IXYA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 (IXYP)  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
132  
50  
250  
A
A
A
TO-247 AD (IXYH)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
400  
mJ  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5  
Clamped Inductive Load  
ICM = 100  
A
μs  
W
G
C
E
C (Tab)  
(RBSOA)  
VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
600  
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
International Standard Packages  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247 & TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
15 A  
250 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.73  
2.10  
2.10  
V
V
High Frequency Power Inverters  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100552C(9/14)  
IXYA50N65C3 IXYP50N65C3  
IXYH50N65C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-220 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
18  
30  
S
Cies  
Coes  
Cres  
2290  
135  
50  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
86  
14  
40  
nC  
nC  
nC  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
20  
36  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 36A, VGE = 15V  
0.80  
90  
mJ  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
ns  
ns  
VCE = 400V, RG = 5  
26  
Note 2  
Eof  
0.47  
0.80  
mJ  
f
td(on)  
tri  
19  
37  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.60  
113  
32  
mJ  
ns  
VCE = 400V, RG = 5  
ns  
Note 2  
Eoff  
0.70  
mJ  
RthJC  
RthCS  
RthCS  
0.25 °C/W  
°C/W  
TO-220  
TO-247  
0.50  
0.21  
TO-247 Outline  
°C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
TO-263 Outline  
1 - Gate  
2,4 - Collector  
3 - Emitter  
1 = Gate  
2 = Collector  
3 = Emitter  
4 = Collector  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYA50N65C3 IXYP50N65C3  
IXYH50N65C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
280  
240  
200  
160  
120  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
V
= 15V  
GE  
14V  
GE  
13V  
12V  
11V  
10V  
9V  
13V  
12V  
11V  
8V  
10V  
9V  
7V  
6V  
40  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE (V)  
VCE (V)  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
V
= 15V  
10V  
9V  
GE  
13V  
11V  
I
= 72A  
C
8V  
7V  
I
= 36A  
C
I
= 18A  
C
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VCE - Volts  
TJ (ºC)  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I
= 72A  
C
T
= 150ºC  
25ºC  
J
- 40ºC  
36A  
18A  
4
5
6
7
8
9
10  
7
8
9
10  
11  
12  
13  
14  
15  
VGE (V)  
VGE (V)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYA50N65C3 IXYP50N65C3  
IXYH50N65C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
VCE = 325V  
IC = 36A  
IG = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
IC (A)  
QG (nC)  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
= 1 MHz  
f
100  
80  
C
ies  
60  
C
oes  
res  
40  
T
J
= 150ºC  
20  
C
R
G
= 5  
Ω
dv / dt < 10V / ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
500  
600  
700  
400
VCE (V)  
VCE (V)  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
a
a s s s  
1000  
100  
10  
0.4  
0.1  
V
Limit  
CE(sat)  
25µs  
100µs  
1ms  
1
T = 175ºC  
J
T
C
= 25ºC  
10ms  
Single Pulse  
DC  
0.1  
0.01  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS (V)  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYA50N65C3 IXYP50N65C3  
IXYH50N65C3  
Fig. 14. Inductive Switching Energy Loss vs.  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
6
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
8
7
6
5
4
3
2
1
0
E
R
E
on - - - -  
E
E
off  
on - - - -  
off  
5
4
3
2
1
0
= 5  
V
= 15V  
GE  
Ω ,  
G
T
J
= 150ºC , V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 72A  
C
T
J
= 150ºC  
I
= 36A  
35  
C
T
= 25ºC  
40  
J
15  
20  
25  
30  
35  
45  
50  
55  
60  
65  
70  
75  
5
25  
15  
10  
15  
20  
25  
30  
40  
45  
50  
55  
RG (Ω)  
IC (A)  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
480  
400  
320  
240  
160  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
7
6
5
4
3
2
1
0
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
R
= 5  
VGE = 15V  
Ω ,  
G
T
J
= 150ºC, V = 15V  
GE  
VCE = 400V  
V
= 400V  
CE  
I
= 72A  
I
= 72A  
C
C
I
= 36A  
C
IC = 36A  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
50  
75  
100  
125  
150  
RG (Ω)  
TJ (ºC)  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
180  
160  
140  
120  
100  
80  
R
G
= 5 , V = 15V  
Ω
GE  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 72A  
C
T
= 150ºC  
J
I
= 36A  
C
T
J
= 25ºC  
60  
60  
40  
40  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
25  
50  
75  
100  
125  
150  
TJ (ºC)  
IC (A)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYA50N65C3 IXYP50N65C3  
IXYH50N65C3  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
120  
100  
80  
60  
40  
20  
0
31  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
t r i  
t
d(on) - - - -  
t r i  
td(on)  
- - - -  
28  
25  
22  
19  
16  
13  
T = 150ºC, V = 15V  
J
R
G
= 5 , V = 15V  
Ω
GE  
GE  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 72A  
C
T = 25ºC  
J
I
= 36A  
C
60  
T = 150ºC  
J
40  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
IC (A)  
RG (Ω)  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 22. Maximum Peak Load Current vs. Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
140  
120  
100  
80  
25  
24  
23  
22  
21  
20  
19  
18  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 72A  
C
Triangular Wave  
60  
T = 150ºC  
J
T
C
= 75ºC  
40  
V
V
= 400V  
= 15V  
CE  
GE  
I
= 36A  
C
20  
R = 5ꢀ  
G
Square Wave  
Duty Cycle = 0.5  
0
25  
50  
75  
100  
125  
150  
10  
100  
1000  
TJ (ºC)  
(kH)  
fmax  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_50N65C3D1(5D) 9-03-14  
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