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IXYF30N170CV1

型号：

IXYF30N170CV1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

211 K

下载PDF手册
Advance Technical Information  
High Voltage XPTTM  
IGBT w/ Diode  
VCES = 1700V  
IC110 = 20A  
VCE(sat)  4.0V  
tfi(typ) = 95ns  
IXYF30N170CV1  
(Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
1700  
1700  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
1
2
Isolated Tab  
5
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
36  
20  
20  
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
1 = Gate  
2 = Emitter  
5 = Collector  
260  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 150°C, RG = 2.7  
Clamped Inductive Load  
ICM = 120  
1360  
A
V
PC  
TC = 25°C  
230  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Isolated Mounting Surface  
2500V~ Electrical Isolation  
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
High Blocking Voltage  
High Peak Current Capability  
Low Saturation Voltage  
VISOL  
Weight  
50/60Hz, 1 Minute  
2500  
8
V~  
g
Advantages  
Low Gate Drive Requirement  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = 0.8 • VCES, VGE = 0V  
V
V
5.0  
Applications  
25 A  
Switch-Mode and Resonant-Mode  
Note 3, TJ = 125C  
4 mA  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
3.5  
4.6  
4.0  
V
V
TJ = 150C  
AC Switches  
© 2017 IXYS CORPORATION, All Rights Reserved  
DS100820A(7/17)  
IXYF30N170CV1  
ISOPLUS i4-PakTM (HV) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
A
E
U
S
gfs  
IC = 30A, VCE = 10V, Note 1  
Gate Input Resistance  
17  
28  
S
Q
A2  
RGi  
2.8  
T
D
Cies  
Coes  
Cres  
3100  
210  
55  
pF  
pF  
pF  
R
4
VCE = 25V, VGE = 0V, f = 1MHz  
L1  
1
2
3
Qg(on)  
Qge  
Qgc  
150  
15  
nC  
nC  
nC  
c
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
65  
b1  
A1  
b
e
e1  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
33  
ns  
ns  
Inductive load, TJ = 25°C  
Pin 1 = Gate  
Pin2  
=
=
Emitter  
Collector  
Isolated  
Pin  
3
IC = 30A, VGE = 15V  
Tab  
4
=
3.6  
143  
95  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2.7  
Note 3  
ns  
Eof  
1.8  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
33  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 30A, VGE = 15V  
5.5  
193  
134  
3.5  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2.7  
Note 3  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.65 °C/W  
°C/W  
0.15  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Value  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
VF  
3.5  
V
V
IF = 30A,VGE = 0V, Note 1  
TJ = 150°C  
3.7  
32  
IRM  
trr  
A
IF = 30A,VGE = 0V, -diF/dt = 500A/μs,  
VR = 1200V, TJ = 150°C  
175  
ns  
RthJC  
0.86°C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Part must be heatsunk for high-temp Ices measurement.  
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYX30N170CV1  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
V
= 15V  
V
= 15V  
GE  
GE  
13V  
11V  
10V  
9V  
14V  
13V  
12V  
8V  
7V  
6V  
11V  
10V  
9V  
8V  
7V  
6V  
0
0
0
6
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
60  
50  
40  
30  
20  
10  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
10V  
9V  
I
= 60A  
C
8V  
I
= 30A  
C
7V  
I
= 15A  
C
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
1
2
3
4
5
6
7
8
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
T
= 25ºC  
J
I
= 60A  
30A  
C
T
J
= 150oC  
25oC  
- 40oC  
15A  
12  
4
5
6
7
8
9
7
8
9
10  
11  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYF30N170CV1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
T
J
= - 40oC  
VCE = 850V  
IC = 30A  
IG = 10mA  
25oC  
150oC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
20  
40  
60  
80  
100  
120  
140  
160  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
140  
120  
100  
80  
C
C
ies  
oes  
60  
40  
T
J
= 150oC  
C
R = 2.7  
Ω
G
20  
res  
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
0
10  
15  
20  
25  
30  
35  
40  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance (IGBT)  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYF30N170CV1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
10  
9
8
7
6
5
4
3
2
1
0
20  
16  
12  
8
12  
10  
8
30  
25  
20  
15  
10  
5
E
E
E
R
E
off  
on  
off  
on  
= 15V  
GE  
T = 150ºC , V = 15V  
= 2.7  
V
Ω  
J
GE  
G
V
= 850V  
V
= 850V  
CE  
CE  
T
J
= 150oC  
I
= 60A  
C
6
= 25oC  
4
T
J
4
2
I
= 30A  
24  
C
0
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
3
6
9
12  
15  
18  
21  
27  
30  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
700  
600  
500  
400  
300  
200  
100  
10  
9
8
7
6
5
4
3
2
1
0
20  
18  
16  
14  
12  
10  
8
E
R
E
t f i  
td(off)  
off  
on  
= 2.7  
V
GE = 15V  
Ω  
T = 150oC, V = 15V  
G
J GE  
VCE = 850V  
V
= 850V  
CE  
I
= 60A  
C
I
= 30A  
C
I
= 60A  
C
6
4
IC = 30A  
2
0
60  
25  
50  
75  
100  
125  
150  
3
6
9
12  
15  
18  
21  
24  
27  
30  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
220  
200  
180  
160  
140  
120  
100  
200  
180  
160  
140  
120  
100  
80  
260  
t f i  
td(off)  
t f i  
td(off)  
240  
220  
200  
180  
160  
140  
120  
100  
R
G
= 2.7 , V = 15V  
Ω  
GE  
R
G
= 2.7 , V = 15V  
Ω  
GE  
I
= 60A  
C
V
= 850V  
CE  
V
= 850V  
CE  
T
J
= 150oC  
I
= 30A  
C
T
J
= 25oC  
60  
60  
40  
40  
25  
50  
75  
100  
125  
150  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
TJ - Degrees Centigrade  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYF30N170CV1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
120  
100  
80  
60  
40  
20  
0
20  
180  
160  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
t r i  
td(on)  
t r i  
td(on)  
19  
18  
17  
16  
15  
14  
T = 150oC, V = 15V  
R
G
= 2.7 , V = 15V  
Ω  
GE  
J
GE  
V
= 850V  
CE  
V
= 850V  
CE  
T
J
= 150oC  
I
= 60A  
T
J
= 25oC  
C
60  
I
= 30A  
C
40  
20  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
3
6
9
12  
15  
18  
21  
24  
27  
30  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
20  
19  
18  
17  
16  
15  
14  
t r i  
td(on)  
R
G
= 2.7 , V = 15V  
Ω  
GE  
V
= 850V  
CE  
I
I
= 60A  
C
= 30A  
C
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_30N170CV1(7T-AT653) 3-29-17-A  
IXYF30N170CV1  
Fig. 21. Diode Forward Characteristics  
Fig. 22. Reverse Recovery Charge vs. -diF/dt  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
100  
80  
60  
40  
20  
0
T = 150oC  
J
V
= 1200V  
R
T
J
= 25oC  
I
= 60A  
F
T
J
= 150oC  
30A  
15A  
0
1
2
3
4
5
6
7
300  
350  
400  
450  
500  
550  
600  
650  
700  
750  
800  
800  
10  
-diF/ dt (A/μs)  
VF (V)  
Fig. 23. Reverse Recovery Current vs. -diF/dt  
Fig. 24. Reverse Recovery Time vs. -diF/dt  
55  
50  
45  
40  
35  
30  
25  
20  
15  
260  
240  
220  
200  
180  
160  
140  
120  
100  
T = 150oC  
J
T = 150oC  
J
V
= 1200V  
R
V
= 1200V  
R
I
= 60A  
F
I
= 60A, 30A, 15A  
F
30A  
15A  
300  
400  
500  
600  
700  
800  
300  
400  
500  
600  
700  
diF/dt (A/μs)  
-diF/dt (A/μs)  
I
Fig. 25. Dynamic Parameters QRR, RR vs.  
Fig. 26. Maximum Transient Thermal Impedance  
(Diode)  
Junction Temperature  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
1
V
= 1200V  
R
I
= 30A  
F
-diF/dt = 500A/μs  
K
Q
RR  
F
K
I
RR  
F
0.1  
0.0001  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.001  
0.01  
0.1  
1
TJ (ºC)  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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