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IXYA20N65C3D1

型号：

IXYA20N65C3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

248 K

下载PDF手册
XPTTM 650V IGBT  
GenX3TM w/Diode  
VCES = 650V  
IC110 = 20A  
VCE(sat)  2.50V  
tfi(typ) = 28ns  
IXYA20N65C3D1  
IXYP20N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-263 AA (IXYA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
C (Tab)  
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220AB (IXYP)  
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
50  
20  
18  
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
G
105  
C
C (Tab)  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
10  
A
200  
mJ  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 20  
ICM = 40  
A
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
10  
μs  
Features  
(SCSOA)  
RG = 82, Non Repetitive  
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Fast Diode  
Short Circuit Capability  
International Standard Packages  
PC  
TC = 25°C  
200  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
FC  
Mounting Torque (TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in  
N/lb  
High Power Density  
Extremely Rugged  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Low Gate Drive Requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
10 A  
400 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.27  
2.44  
2.50  
V
V
High Frequency Power Inverters  
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100576C(3/15)  
IXYA20N65C3D1  
IXYP20N65C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
7
12  
S
Cies  
Coes  
Cres  
822  
67  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
19  
Qg(on)  
Qge  
Qgc  
30  
6
nC  
nC  
nC  
1. Gate  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
15  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
34  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20A, VGE = 15V  
0.43  
80  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 400V, RG = 20  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
28  
Note 2  
Eof  
0.35  
0.65 mJ  
f
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
33  
ns  
ns  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
Inductive load, TJ = 150°C  
E
9.65  
10.41  
.380  
.405  
IC = 20A, VGE = 15V  
0.70  
96  
mJ  
ns  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
VCE = 400V, RG = 20  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
36  
ns  
Note 2  
Eoff  
0.40  
mJ  
RthJC  
RthCS  
0.65 °C/W  
°C/W  
TO-220  
0.50  
TO-220 Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150C  
1.5  
11  
IRM  
A
IF = 20A, VGE = 0V,  
-diF/dt = 300A/μs, VR = 400V, TJ = 150°C  
trr  
135  
ns  
Pins: 1 - Gate  
2,4 - Collector  
3 - Emitter  
RthJC  
1.85 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYA20N65C3D1  
IXYP20N65C3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
V
= 15V  
GE  
V
= 15V  
13V  
12V  
GE  
11V  
10V  
14V  
13V  
12V  
11V  
9V  
10V  
9V  
8V  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
40  
35  
30  
25  
20  
15  
10  
5
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
14V  
13V  
12V  
11V  
10V  
I
= 40A  
C
I
= 20A  
C
9V  
8V  
7V  
I
= 10A  
0
C
0
-50  
-25  
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
T
J
= 25ºC  
I
= 40A  
C
T
J
= 150ºC  
25ºC  
- 40ºC  
20A  
10A  
4
5
6
7
8
9
10  
11  
12  
13  
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA20N65C3D1  
IXYP20N65C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
IC = 20A  
V
= 10V  
CE  
25ºC  
I
G = 10mA  
150ºC  
6
6
4
4
2
2
0
0
0
4
8
12  
16  
20  
24  
28  
32  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
= 1 MHz  
f
40  
30  
20  
10  
0
C
C
ies  
oes  
T
= 150ºC  
J
R
= 20  
Ω
dv / dt < 10V / ns  
G
C
res  
10  
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance (IGBT)  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1
V
Limit  
CE(sat)  
D = 0.5  
D = 0.2  
D = 0.1  
25µs  
0.1  
100µs  
D = tp / T  
D = 0.05  
t
p
D = 0.02  
D = 0.01  
1
T
= 175ºC  
= 25ºC  
J
1ms  
T
Single Pulse  
T
C
Single Pulse  
10ms  
DC  
0.01  
0.1  
1.E-06  
1.E-05  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1
10  
100  
1000  
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYA20N65C3D1  
IXYP20N65C3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
7
6
5
4
3
2
1
0
E
R
E
on - - - -  
off  
E
E
on - - - -  
off  
= 20  
V
= 15V  
Ω ,  
G
GE  
T
= 150ºC , V = 15V  
GE  
J
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 150ºC  
I
= 40A  
C
T
J
= 25ºC  
I
= 20A  
C
10  
20  
25  
15  
20  
25  
30  
35  
40  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
55  
50  
45  
40  
35  
30  
25  
20  
270  
240  
210  
180  
150  
120  
90  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
R
= 20  
VGE = 15V  
Ω ,  
T
J
= 150ºC, V = 15V  
GE  
G
VCE = 400V  
V
= 400V  
CE  
I
= 20A  
C
I
= 40A  
C
I
= 40A  
C
IC = 20A  
60  
30  
40  
50  
60  
70  
80  
90  
100  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
44  
40  
36  
32  
28  
24  
20  
112  
55  
50  
45  
40  
35  
30  
25  
20  
130  
120  
110  
100  
90  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
104  
96  
88  
80  
72  
64  
R
G
= 20 , V = 15V  
Ω
GE  
R
G
= 20 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 20A  
C
T = 150ºC  
J
I
= 40A  
C
80  
T = 25ºC  
J
70  
60  
50  
75  
100  
125  
150  
10  
15  
20  
25  
30  
35  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA20N65C3D1  
IXYP20N65C3D1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
280  
240  
200  
160  
120  
80  
140  
120  
100  
80  
t r i  
t r i  
t
d(on) - - - -  
R
G
= 20 , V = 15V  
Ω
GE  
T
J
= 150ºC, V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 25ºC  
I
= 40A  
C
60  
T
J
= 150ºC  
40  
I
= 20A  
C
40  
20  
0
0
20  
25  
0
30  
40  
50  
60  
70  
80  
90  
100  
10  
15  
20  
25  
30  
35  
40  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
34  
30  
26  
22  
18  
14  
10  
t r i  
t
d(on) - - - -  
R
G
= 20 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
I
= 40A  
C
= 20A  
C
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 23. Reverse Recovery Charge vs. -diF/dt  
Fig. 22. Diode Forward Characteristics  
40  
35  
30  
25  
20  
15  
10  
5
1.6  
T = 150ºC  
J
I
F
= 30A  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 400V  
R
20A  
T
= 150ºC  
J
T
J
= 25ºC  
10A  
0
0.5  
1
1.5  
2
2.5  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
-diF/ dt (A/µs)  
VF (V)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYA20N65C3D1  
IXYP20N65C3D1  
Fig. 24 Reverse Recovery Current vs. -diF/dt  
Fig. 25. Reverse Recovery Time vs. -diF/dt  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
180  
160  
140  
120  
100  
80  
T
= 150ºC  
= 400V  
J
T
= 150ºC  
J
V
R
V
= 400V  
R
10A  
20A  
I
F
= 40A  
I
F
= 40A  
20A  
10A  
60  
200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400  
diF/dt (A/µs)  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
-di /dt (A/µs)  
F
4
I
Fig. 26. Dynamic Parameters QRR, RR vs.  
Fig. 27. Maximum Transient Thermal Impedance (Diode)  
Junction Temperature  
AAAAA  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
= 400V  
R
I
F
= 20A  
1
D = 0.5  
-diF /dt = 300A/µs  
D = 0.2  
D = 0.1  
D = 0.05  
D = tp / T  
K
I
RR  
F
D = 0.02  
D = 0.01  
Single Pulse  
0.1  
t
p
T
K
Q
RR  
F
0.01  
1.E-06  
1.E-05  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ (ºC)  
Pulse Width - Second  
Fig. 28. Cauer Thermal Network  
IGBT  
Ri (°C/W)  
i
Ci (J/°C)  
0.0017715  
0.0166820  
0.0391660  
1
2
3
0.170320  
0.136990  
0.090011  
DIODE  
i
Ri (°C/W)  
0.331730  
0.768860  
0.285550  
Ci (J/°C)  
1
2
3
0.0002858  
0.0037423  
0.0432130  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXY_20N65C3(3D) 01-21-15-B  
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