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IXYK140N90C3

型号：

IXYK140N90C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

211 K

下载PDF手册
XPTTM 900V IGBTs  
GenX3TM  
VCES = 900V  
IC110 = 140A  
VCE(sat) ≤ 2.7V  
tfi(typ) = 105ns  
IXYK140N90C3  
IXYX140N90C3  
High-Speed IGBTs  
for 20-50 kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
900  
900  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC = 25°C (Chip Capability)  
310  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC = 110°C  
160  
140  
A
A
G
TC = 25°C, 1ms  
840  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
70  
1
A
J
G = Gate  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
ICM = 280  
A
C = Collector  
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
PC  
TC = 25°C  
1630  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
Optimized for Low Switching Losses  
Square RBSOA  
International Standard Packages  
Positive Thermal Coefficient of  
Vce(sat)  
z
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
High Current Handling Capability  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
950  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.5  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
25 μA  
z
TJ = 150°C  
TJ = 150°C  
1.25 mA  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.15  
2.85  
2.70  
V
V
z
z
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100450B(02/13)  
IXYK140N90C3  
IXYX140N90C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
52  
S
Cies  
Coes  
Cres  
9830  
570  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
185  
Qg(on)  
Qge  
Qgc  
330  
82  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
128  
td(on)  
tri  
Eon  
td(off)  
tfi  
40  
86  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
4.3  
145  
105  
4.0  
mJ  
ns  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 0.5 • VCES, RG = 1Ω  
3
=
ns  
Note 2  
Eof  
6.5  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
37  
85  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
6.5  
175  
125  
5.0  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.092 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK140N90C3  
IXYX140N90C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
280  
240  
200  
160  
120  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
12V  
VGE = 15V  
11V  
12V  
11V  
10V  
9V  
10V  
9V  
8V  
6V  
40  
8V  
7V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
4
0
2
4
6
8
10  
12  
14  
16  
18  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
280  
240  
200  
160  
120  
80  
VGE = 15V  
VGE = 15V  
12V  
I C = 280A  
11V  
10V  
9V  
I C = 140A  
8V  
I C = 70A  
40  
7V  
6V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
1
200  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 280A  
TJ = 150ºC  
25ºC  
- 40ºC  
140A  
70A  
60  
40  
20  
0
8
9
10  
11  
12  
13  
14  
15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
9.5  
10  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK140N90C3  
IXYX140N90C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
120  
100  
80  
60  
40  
20  
0
16  
14  
12  
10  
8
VCE = 450V  
I
I
C = 140A  
G = 10mA  
TJ = - 40ºC, 25ºC, 150ºC  
6
4
2
0
0
50  
100  
150  
200  
250  
300  
350  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
300  
250  
200  
150  
100  
50  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 150ºC  
RG = 1  
Ω
C
res  
dv / dt < 10V / ns  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.0001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK140N90C3  
IXYX140N90C3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
8
7
6
5
4
3
2
1
9
8
7
6
5
4
3
2
6
5
4
3
2
1
10  
8
E
E
on - - - -  
E
E
on - - - -  
VGE = 15V  
off  
off  
RG = 1  
TJ = 150ºC , VGE = 15V  
VCE = 450V  
Ω ,  
CE = 450V  
V
I C = 100A  
6
TJ = 150ºC  
4
TJ = 25ºC  
2
I C = 50A  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
8
8
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
RG = 1  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
TJ = 150ºC, VGE = 15V  
VGE = 15V  
Ω ,  
VCE = 450V  
VCE = 450V  
I C = 100A  
I C = 50A  
I C = 100A  
I C = 50A  
60  
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
200  
180  
160  
140  
120  
100  
80  
260  
240  
220  
200  
180  
160  
140  
120  
250  
225  
200  
175  
150  
125  
100  
75  
260  
240  
220  
200  
180  
160  
140  
120  
100  
tf i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
RG = 1  
, VGE = 15V  
Ω
RG = 1  
,
VGE = 15V  
Ω
VCE = 450V  
VCE = 450V  
TJ = 150ºC  
I C = 50A  
TJ = 25ºC  
I C = 100A  
50  
60  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK140N90C3  
IXYX140N90C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
120  
100  
80  
60  
40  
20  
0
44  
42  
40  
38  
36  
34  
32  
160  
140  
120  
100  
80  
80  
72  
64  
56  
48  
40  
32  
24  
16  
tr i  
td(on) - - - -  
tr i  
TJ = 150ºC, VGE = 15V  
RG = 1  
, VGE = 15V  
Ω
VCE = 450V  
VCE = 450V  
I C = 100A  
I C = 50A  
TJ = 25ºC, 150ºC  
60  
40  
20  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
52  
48  
44  
40  
36  
32  
28  
24  
t r i  
td(on) - - - -  
RG = 1  
, VGE = 15V  
Ω
VCE = 450V  
I C = 100A  
60  
I C = 50A  
40  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_140N90C3(91)03-26-12-A  
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