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IXYP15N65C3D1

型号:

IXYP15N65C3D1

品牌:

IXYS[ IXYS CORPORATION ]

页数:

6 页

PDF大小:

220 K

Preliminary Technical Information  
XPTTM 650V IGBT  
GenX3TM w/Diode  
VCES = 650V  
IC110 = 15A  
VCE(sat)  2.5V  
tfi(typ) = 28ns  
IXYA15N65C3D1  
IXYP15N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-263 AA (IXYA)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
C (Tab)  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
TO-220AB (IXYP)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
IF110  
ICM  
TC = 25°C  
38  
15  
23  
80  
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
G
C
C (Tab)  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
A
100  
mJ  
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 20  
Clamped Inductive Load  
ICM = 30  
A
μs  
W
(RBSOA)  
@VCE VCES  
Features  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
(SCSOA)  
RG = 82, Non Repetitive  
Optimized for 20-60kHz Switching  
Square RBSOA  
Avalanche Rated  
Anti-Parallel Fast Diode  
Short Circuit Capability  
International Standard Packages  
PC  
TC = 25°C  
200  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
FC  
Mounting Torque (TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in  
N/lb  
High Power Density  
Extremely Rugged  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
10 A  
400 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 15A, VGE = 15V, Note 1  
1.96  
2.45  
2.50  
V
V
High Frequency Power Inverters  
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100575B(02/15)  
IXYA15N65C3D1  
IXYP15N65C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-263 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 15A, VCE = 10V, Note 1  
5.0  
8.5  
S
Cies  
Coes  
Cres  
583  
52  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
13  
Qg(on)  
Qge  
Qgc  
19  
4
nC  
nC  
nC  
1. Gate  
IC = 15A, VGE = 15V, VCE = 0.5 • VCES  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
10  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
20  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 15A, VGE = 15V  
0.27  
68  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 400V, RG = 20  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
28  
Note 2  
Eof  
0.23  
0.40 mJ  
f
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
21  
ns  
ns  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
Inductive load, TJ = 150°C  
E
9.65  
10.41  
.380  
.405  
IC = 15A, VGE = 15V  
0.53  
80  
mJ  
ns  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
VCE = 400V, RG = 20  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
42  
ns  
Note 2  
Eoff  
0.24  
mJ  
RthJC  
RthCS  
0.75 °C/W  
°C/W  
TO-220  
0.50  
TO-220 Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 125C  
1.7  
2.5  
IRM  
A
IF = 12A, VGE = 0V,  
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
trr  
trr  
110  
30  
ns  
ns  
Pins: 1 - Gate  
2,4 - Collector  
3 - Emitter  
RthJC  
1.85 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYA15N65C3D1  
IXYP15N65C3D1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
14V  
13V  
12V  
V
= 15V  
GE  
14V  
13V  
12V  
11V  
10V  
9V  
11V  
10V  
8V  
7V  
9V  
8V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
30  
25  
20  
15  
10  
5
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
14V  
13V  
12V  
11V  
I
= 30A  
C
10V  
9V  
I
= 15A  
C
I
= 7.5A  
C
8V  
7V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
8
7
6
5
4
3
2
1
T
J
= 25ºC  
I
= 7.5A  
C
15A  
30A  
T
J
= 150ºC  
25ºC  
- 40ºC  
0
8
9
10  
11  
12  
13  
14  
15  
5
6
7
8
9
10  
11  
12  
13  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA15N65C3D1  
IXYP15N65C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
11  
10  
9
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
IC = 15A  
V
= 10V  
CE  
25ºC  
I
G = 10mA  
8
150ºC  
7
6
5
6
4
3
4
2
2
1
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
5
10  
15  
20  
25  
30  
35  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
35  
30  
25  
20  
15  
10  
5
1,000  
C
ies  
100  
C
oes  
T
= 150ºC  
J
R
= 20  
dv / dt < 10V / ns  
C
G
res  
= 1 MHz  
5
f
0
10  
100  
200  
300  
400  
500  
600  
700  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYA15N65C3D1  
IXYP15N65C3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
5
4
3
2
1
0
E
R
E
on - - - -  
= 15V  
off  
E
E
on - - - -  
off  
= 20  
V
,  
G
GE  
T
J
= 150ºC , V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 30A  
C
T
J
= 150ºC  
I
= 15A  
C
T
= 25ºC  
24  
J
8
10  
12  
14  
16  
18  
20  
22  
26  
28  
30  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
220  
200  
180  
160  
140  
120  
100  
80  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
T
= 150ºC, V = 15V  
R
G
= 20  
VGE = 15V  
,  
J GE  
V
= 400V  
VCE = 400V  
CE  
I
= 15A  
C
I
= 30A  
C
I
= 30A  
C
IC = 15A  
60  
40  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
55  
120  
50  
45  
40  
35  
30  
25  
20  
15  
10  
90  
85  
80  
75  
70  
65  
60  
55  
50  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
50  
45  
40  
35  
30  
25  
20  
15  
110  
100  
90  
R
G
= 20 , V = 15V  
R
G
= 20 , V = 15V  
GE  
GE  
T = 150ºC  
J
V
= 400V  
V
= 400V  
CE  
CE  
I
= 15A  
C
80  
T
J
= 25ºC  
70  
I
= 30A  
C
60  
50  
40  
25  
50  
75  
100  
125  
150  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
TJ - Degrees Centigrade  
IC - Amperes  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYA15N65C3D1  
IXYP15N65C3D1  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
td(on)  
- - - -  
60  
50  
40  
30  
20  
10  
0
22  
20  
18  
16  
14  
12  
10  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
t r i  
t r i  
t
d(on) - - - -  
R
G
= 20 , V = 15V  
T = 150ºC, V = 15V  
GE  
J
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 30A  
C
T = 125ºC, 25ºC  
J
60  
40  
I
= 15A  
70  
C
20  
0
20  
30  
40  
50  
60  
80  
90  
100  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
19  
18  
17  
16  
15  
14  
13  
t r i  
t
d(on) - - - -  
R
G
= 20 , V = 15V  
GE  
V
= 400V  
CE  
I
= 30A  
C
I
= 15A  
C
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 21. Maximum Transient Impedance for Diode  
3
1
0.1  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_15N65C3(31)7-30-13-A  
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