IXYA15N65C3D1
IXYP15N65C3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-263 Outline
Min.
Typ.
Max.
gfs
IC = 15A, VCE = 10V, Note 1
5.0
8.5
S
Cies
Coes
Cres
583
52
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
13
Qg(on)
Qge
Qgc
19
4
nC
nC
nC
1. Gate
IC = 15A, VGE = 15V, VCE = 0.5 • VCES
2. Collector
3. Emitter
4. Collector
Bottom Side
10
td(on)
tri
Eon
td(off)
tfi
15
20
ns
ns
mJ
ns
ns
Inductive load, TJ = 25°C
IC = 15A, VGE = 15V
0.27
68
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
VCE = 400V, RG = 20
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
28
Note 2
Eof
0.23
0.40 mJ
f
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
td(on)
tri
Eon
td(off)
tfi
15
21
ns
ns
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
Inductive load, TJ = 150°C
E
9.65
10.41
.380
.405
IC = 15A, VGE = 15V
0.53
80
mJ
ns
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
VCE = 400V, RG = 20
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
42
ns
Note 2
Eoff
0.24
mJ
RthJC
RthCS
0.75 °C/W
°C/W
TO-220
0.50
TO-220 Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 10A, VGE = 0V, Note 1
3.0
V
V
TJ = 125C
1.7
2.5
IRM
A
IF = 12A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
trr
trr
110
30
ns
ns
Pins: 1 - Gate
2,4 - Collector
3 - Emitter
RthJC
1.85 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537