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IXYP8N90C3

型号：

IXYP8N90C3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

178 K

下载PDF手册
900V XPTTM IGBT  
GenX3TM  
VCES = 900V  
IC110 = 8A  
VCE(sat)  3.0V  
tfi(typ) = 130ns  
IXYY8N90C3  
IXYP8N90C3  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-252 (IXYY)  
G
E
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
900  
900  
V
V
C (Tab)  
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-220 (IXYP)  
IC25  
IC110  
TC = 25°C  
TC = 110°C  
20  
8
A
A
ICM  
TC = 25°C, 1ms  
48  
A
G
C
C (Tab)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
4
A
E
15  
mJ  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 30  
Clamped Inductive Load  
ICM = 16  
A
Tab = Collector  
(RBSOA)  
@VCE VCES  
PC  
TC = 25°C  
125  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
-55 ... +175  
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13/10  
Nm/lb.in.  
International Standard Packages  
Weight  
TO-252  
TO-220  
0.35  
3.00  
g
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
950  
3.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
6.0  
10 A  
150 μA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 8A, VGE = 15V, Note 1  
2.15  
2.75  
3.00  
V
V
Lamp Ballasts  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100399B(12/14)  
IXYY8N90C3  
IXYP8N90C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-252 AA Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 8A, VCE = 10V, Note 1  
2.9  
4.8  
S
Cies  
Coes  
Cres  
400  
24  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
7.8  
Qg(on)  
Qge  
Qgc  
13.3  
3.4  
nC  
nC  
nC  
IC = 8A, VGE = 15V, VCE = 0.5 • VCES  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Bottom Side  
5.8  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
20  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 25°C  
IC = 8A, VGE = 15V  
0.46  
40  
Dim. Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
VCE = 0.5 • VCES, RG = 30  
A
A1  
2.19 2.38 0.086 0.094  
0.89 1.14 0.035 0.045  
130  
0.18  
ns  
Note 2  
Eof  
0.50 mJ  
A2  
b
0
0.13  
0
0.005  
f
0.64 0.89 0.025 0.035  
td(on)  
tri  
Eon  
td(off)  
tfi  
17  
22  
ns  
ns  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
Inductive load, TJ = 125°C  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
IC = 8A, VGE = 15V  
1.00  
75  
mJ  
ns  
D
D1  
5.97 6.22 0.235 0.245  
4.32 5.21 0.170 0.205  
VCE = 0.5 • VCES, RG = 30  
163  
0.22  
ns  
E
E1  
6.35 6.73 0.250 0.265  
4.32 5.21 0.170 0.205  
Note 2  
Eoff  
mJ  
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
RthJC  
RthCS  
1.20 °C/W  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
TO-252  
TO-220  
0.35  
0.50  
°C/W  
°C/W  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
TO-220 Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYY8N90C3  
IXYP8N90C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
V
= 15V  
GE  
13V  
12V  
V
= 15V  
GE  
11V  
13V  
10V  
9V  
12V  
11V  
6
10V  
4
8V  
7V  
9V  
8V  
7V  
2
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
16  
14  
12  
10  
8
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
I
= 16A  
C
10V  
I
= 8A  
C
9V  
8V  
6
4
2
I
= 4A  
C
7V  
6V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
20  
18  
16  
14  
12  
10  
8
7
6
5
4
3
2
1
T
J
= 25ºC  
I
= 16A  
C
T
J
= 150ºC  
25ºC  
- 40ºC  
6
8A  
4A  
4
2
0
8
9
10  
11  
12  
13  
14  
3.5  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
10.5  
11.5  
VGE - Volts  
VGE - Volts  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYY8N90C3  
IXYP8N90C3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
VCE = 450V  
IC = 8A  
T
J
= - 40ºC  
I
G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
0
2
4
6
8
10  
12  
14  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
18  
16  
14  
12  
10  
8
1,000  
100  
10  
C
ies  
C
oes  
6
T
J
= 150ºC  
4
C
res  
R
G
= 30  
Ω
2
= 1 MHz  
5
dv / dt < 10V / ns  
f
1
0
0
10  
15  
20  
25  
30  
35  
40  
200  
300  
400  
500  
600  
700  
800  
900  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaa  
3
1
0.1  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYY8N90C3  
IXYP8N90C3  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
5
4
3
2
1
0
E
R
E
on - - - -  
E
E
on - - - -  
off  
off  
= 30  
V
Ω  
= 15V  
GE  
G
T = 125ºC , V = 15V  
J
GE  
V
= 450V  
CE  
V
= 450V  
CE  
I
= 16A  
C
T = 125ºC  
J
I
= 8A  
C
T = 25ºC  
J
8
9
10  
11  
12  
13  
14  
15  
16  
30  
60  
90  
120  
150  
180  
210  
240  
270  
300  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
E
E
t f i  
t
d(off) - - - -  
on - - - -  
off  
= 30  
R
V
Ω  
GE = 15V  
T = 125ºC, V = 15V  
J GE  
G
VCE = 450V  
V
= 450V  
CE  
I
= 16A  
C
I
= 8A  
C
IC = 8A  
I
= 16A  
180  
C
40  
40  
0
0
30  
60  
90  
120  
150  
210  
240  
270  
300  
25  
50  
75  
100  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
220  
200  
180  
160  
140  
120  
100  
80  
110  
200  
100  
90  
80  
70  
60  
50  
40  
30  
20  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
100  
90  
80  
70  
60  
50  
40  
30  
20  
180  
160  
140  
120  
100  
80  
R
G
= 30 , V = 15V  
Ω  
GE  
R
G
= 30 , V = 15V  
Ω  
GE  
V
= 450V  
CE  
V
= 450V  
CE  
I
= 8A  
C
T
J
= 125ºC  
T
J
= 25ºC  
I
= 16A  
C
60  
60  
40  
40  
8
9
10  
11  
12  
13  
14  
15  
16  
25  
50  
75  
100  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYY8N90C3  
IXYP8N90C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
70  
60  
50  
40  
30  
20  
10  
0
18.5  
18.0  
17.5  
17.0  
16.5  
16.0  
15.5  
15.0  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
t r i  
t r i  
t
d(on) - - - -  
R
G
= 30 , V = 15V  
Ω  
GE  
T = 125ºC, V = 15V  
J
GE  
V
= 450V  
CE  
V
= 450V  
CE  
I
= 16A  
C
T = 125ºC  
J
I
= 8A  
C
T = 25ºC  
J
40  
0
8
9
10  
11  
12  
13  
14  
15  
16  
30  
60  
90  
120  
150  
180  
210  
240  
270  
300  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
18.5  
t r i  
t
d(on) - - - -  
18.0  
17.5  
17.0  
16.5  
16.0  
15.5  
15.0  
R
G
= 30 , V = 15V  
Ω  
GE  
V
= 450V  
CE  
I
= 16A  
C
I
= 8A  
C
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_8N90C3(1D) 10-20-11  
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