找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

PZT2907AL-AA3-R

型号:

PZT2907AL-AA3-R

品牌:

UTC[ Unisonic Technologies ]

页数:

4 页

PDF大小:

184 K

UNISONIC TECHNOLOGIES CO., LTD  
PZT2907A  
Preliminary  
PNP SILICON TRANSISTOR  
PNP GENERAL PURPOSE  
AMPLIFIER  
„
DESCRIPTION  
This UTC PZT2907A is designed for use as a general purpose  
amplifier and switch requiring collector currents to 500 mA.  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
SOT-223  
Packing  
Lead Free  
Halogen Free  
1
2
3
PZT2907AL-AA3-R  
PZT2907AG-AA3-R  
B
C
E
Tape Reel  
www.unisonic.com.tw  
1 of 4  
Copyright © 2010 Unisonic Technologies Co., Ltd  
QW-R207-023.c  
PZT2907A  
Preliminary  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified)  
PARAMETER  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
RATINGS  
-60  
UNIT  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current Continuous  
Power Dissipation  
-60  
V
-5  
V
-800  
mA  
W
PD  
1.3  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
°С  
°С  
TSTG  
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Mounted on PCB with 3mm copper at each terminal  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
90  
UNIT  
Thermal Resistance  
Note: Mounted on PCB with 3mm copper at each terminal  
θJA  
/W  
„
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
-60  
Collector-Emitter Breakdown Voltage (Note)  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Base Cutoff Current  
BVCEO IC=-10mA, IB=0  
V
V
IC=-10μA, IE=0  
BVCBO  
BVEBO  
IB  
-60  
-5  
IE=-10μA , IC=0  
V
VCB=-30V, VEB=-0.5V  
VCE=-30V, VBE=-0.5V  
VCB=-50V, IE=0  
-50  
-50  
nA  
nA  
μA  
μA  
Collector Cutoff Current  
ICEX  
-0.02  
-20  
Collector Cutoff Current  
ICBO  
VCB=-50V, IE=0, TA=150°С  
ON CHARACTERISTICS  
IC=-0.1mA, VCE=-10V  
75  
100  
100  
100  
50  
IC=-1.0 mA, VCE=-10V  
IC=-10 mA, VCE=-10V  
DC Current Gain  
hFE  
IC=-150 mA, VCE=-10V (Note)  
IC=-500 mA, VCE=-10V (Note)  
IC=-150 mA, IB=-15mA  
IC=-500 mA, IB=-50mA  
IC=-150 mA, IB=-15mA (Note)  
IC=-500 mA, IB=-50mA  
300  
-0.4  
-1.6  
-1.3  
-2.6  
V
V
V
V
Collector-Emitter Saturation Voltage (Note)  
Base-Emitter Saturation Voltage  
VCE(SAT)  
VBE(SAT)  
SMALL SIGNAL CHARACTERISTICS  
Current Gain – Bandwidth Product  
Output Capacitance  
Input Capacitance  
SWITCHING CHARACTERISTICS  
Turn-on Time  
fT  
IC=-50mA, VCE=-20V, f=100MHz  
VCB=-10V, IE=0, f=100kHz  
VEB=-2V, IC=0, f=100kHz  
200  
MHz  
pF  
Cob  
Cib  
8
30  
pF  
tON  
tDLY  
tR  
45  
10  
ns  
ns  
ns  
ns  
ns  
ns  
VCC=30V, IC=-150mA,  
Delay Time  
IB1=-15mA  
Rise Time  
40  
Turn-off Time  
tOFF  
tS  
100  
80  
VCC=6V, IC=-150mA,  
Storage Time  
IB1= IB2=-15mA  
Fall Time  
tF  
30  
Note: Pulse Test: Pulse Width 300ms, Duty Cycle2.0%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R207-023.C  
www.unisonic.com.tw  
PZT2907A  
Preliminary  
PNP SILICON TRANSISTOR  
„
TEST CIRCUITS  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R207-023.C  
www.unisonic.com.tw  
PZT2907A  
Preliminary  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R207-023.C  
www.unisonic.com.tw  
厂商 型号 描述 页数 下载

SECOS

PZT13003 1.5A , 700V NPN硅中功率晶体管[ 1.5A , 700V NPN Silicon Medium Power Transistor ] 2 页

SECOS

PZT157 PNP晶体管的硅平面高性能晶体管[ PNP Transistor Silicon Planar High Performance Transistor ] 2 页

SECOS

PZT158 硅平面高电流晶体管[ Silicon Planar High Current Transistor ] 2 页

WEITRON

PZT159 PNP硅平面高电流晶体管[ PNP Silicon Planar High Current Transistor ] 4 页

SECOS

PZT159 高电流晶体管[ High Current Transistor ] 2 页

UTC

PZT1816 HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816G-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816L-X-AA3-R HIGH CURRENT SWITCHIG应用[ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

UTC

PZT1816_15 [ HIGH CURRENT SWITCHIG APPLICATIONS ] 12 页

SECOS

PZT194 硅平面中功率晶体管[ Silicon Planar Medium Power Transistor ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.213763s