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PZT772J-Y-C

型号:

PZT772J-Y-C

品牌:

SECOS[ SECOS HALBLEITERTECHNOLOGIE GMBH ]

页数:

2 页

PDF大小:

319 K

PZT772J  
-3A, -40V  
PꢀP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
General Purpose Amplifier and Switch Application  
Low Voltage and Low Current  
SOT-223  
A
M
CLASSIFICATION OF hFE  
4
Product-Rank  
PZT772J-Y  
Top View  
C B  
1
Range  
160~320  
2
3
K
F
L
E
MARKING  
D
=Solid dot  
G
H
J
Millimeter  
Millimeter  
*Solid dot=Green molding compound device, if none, the normal device.  
REF.  
REF.  
Min.  
Max.  
6.70  
7.30  
3.80  
1.90  
4.75  
0.85  
Min.  
Max.  
A
B
C
D
E
F
5.90  
6.70  
3.30  
1.40  
4.45  
0.60  
G
H
J
K
L
-
0.18  
2.00 REF.  
PACKAGE INFORMATION  
0.20  
0.40  
Package  
MPQ  
Leader Size  
1.10 REF.  
2.30 REF.  
2.80 3.20  
SOT-223  
2.5K  
13 inch  
M
Collector  
2
4
ORDER INFORMATION  
Part Number  
Type  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
PZT772J-Y  
1
Base  
PZT772J-Y-C  
3
Emitter  
MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
-40  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-30  
V
Emitter-Base Voltage  
-6  
V
Collector Current -Continuous  
Collector Dissipation  
-3  
A
PC  
1.25  
100  
W
Thermal Resistance from Junction-Ambient  
Junction and Storage Temperature  
RθJA  
°C/W  
°C  
TJ, TSTG  
150, -55~150  
ELECTRICALCHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
-40  
-
-
-
-
IC= -100µA, IE=0  
-30  
V
IC= -10mA, IB=0  
-6  
-
-
V
IE= -100µA, IC=0  
VCB= -40V, IE=0  
-
-
-1  
-10  
-1  
320  
-
Collector cut-off Current  
Emitter cut-off current  
DC Current Gain  
µA  
µA  
ICEO  
-
-
VCE= -30V, IB=0  
IEBO  
-
160  
32  
-
-
VEB= -6V, IC=0  
hFE 1  
-
VCE= -2V, IC= -1A  
VCE= -2V, IC= -100mA  
IC= -2A, IB= -0.2A  
IC= -2A, IB= -0.2A  
VCE= -5V, IC= -0.1A, f=10MHz  
hFE 2  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
-
-0.5  
-1.5  
-
V
V
-
-
-
50  
MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
30-Jul-2018 Rev. A  
Page 1 of 2  
PZT772J  
-3A, -40V  
PꢀP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
30-Jul-2018 Rev. A  
Page 2 of 2  
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