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IXYN100N65C3H1

型号：

IXYN100N65C3H1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

232 K

下载PDF手册
Preliminary Technical Information  
XPTTM 650V GenX3TM IXYN100N65C3H1  
w/ Sonic Diode  
VCES = 650V  
IC110 = 90A  
VCE(sat)  2.3V  
tfi(typ) = 60ns  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E   
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
160  
90  
50  
A
A
A
C
G = Gate, C = Collector, E = Emitter  
either emitter terminal can be used as  
Main or Kelvin Emitter  
ICM  
TC = 25°C, 1ms  
420  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 3  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
VCE VCES  
International Standard Package  
miniBLOC, with Aluminium Nitride  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
7
Isolation  
2500V~ Isolation Voltage  
Anti-Parallel Sonic Diode  
Optimized for 20-60kHz Switching  
Square RBSOA  
Short Circuit Capability  
High Current Handling Capability  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Advantages  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/lb.in  
High Power Density  
Low Gate Drive Requirement  
Weight  
30  
g
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
50 A  
3 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
High Frequency Power Inverters  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.8  
2.2  
2.3  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100568B(10/14)  
IXYN100N65C3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXYN)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
30  
55  
S
Cies  
Coes  
Cres  
4800  
475  
pF  
pF  
pF  
102  
Qg(on)  
Qge  
Qgc  
172  
30  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
80  
td(on)  
tri  
Eon  
td(off)  
tfi  
23  
42  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
1.30  
107  
60  
VCE = 400V, RG = 3  
Note 2  
Eof  
0.83  
1.30 mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
24  
38  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 50A, VGE = 15V  
2.55  
134  
66  
mJ  
ns  
VCE = 400V, RG = 3  
ns  
Note 2  
Eoff  
1.15  
mJ  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.05  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 100A, VGE = 0V, Note 1  
1.7  
1.8  
2.3  
V
V
TJ = 150C  
IRM  
trr  
95  
A
IF = 100A, VGE = 0V, TJ = 150C,  
-diF/dt = 1500A/sVR = 400V  
100  
ns  
RthJC  
0.42 C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMANARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from a subjective evaluation of the design, based upon prior knowledge and  
experience, and constitute a "considered reflection" of the anticipated result. IXYS re-  
serves the right to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYN100N65C3H1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
140  
120  
100  
80  
V
= 15V  
GE  
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
13V  
12V  
11V  
13V  
12V  
10V  
9V  
11V  
10V  
60  
9V  
8V  
7V  
40  
20  
8V  
7V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
9V  
I
= 140A  
C
8V  
I
= 70A  
60  
C
40  
7V  
6V  
20  
I
= 35A  
100  
C
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50  
-25  
0
25  
50  
75  
125  
150  
175  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
200  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
I
= 140A  
70A  
C
T
J
= 150ºC  
25ºC  
- 40ºC  
60  
40  
35A  
20  
0
7
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
VGE (V)  
VGE (V)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYN100N65C3H1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
C = 70A  
IG = 10mA  
I
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC (A)  
QG (nC)  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
200  
160  
120  
80  
C
ies  
C
oes  
C
res  
T
= 150ºC  
J
40  
R
= 3  
Ω
G
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
700  
VCE (V)  
VCE (V)  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance (IGBT)  
1000  
100  
10  
1
V
Limit  
CE(sat)  
0.1  
25µs  
100µs  
0.01  
1ms  
1
T
J
= 175ºC  
T
C
= 25ºC  
10ms  
Single Pulse  
100ms  
DC  
0.1  
0.001  
0.00001  
1
10  
100  
1000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS (V)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width (s)  
IXYN100N65C3H1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
10  
8
E
T
E
E
R
E
on - - - -  
on - - - -  
off  
off  
= 150ºC , V = 15V  
GE  
= 3  
V
= 15V  
GE  
Ω ,  
J
G
V
= 400V  
V
CE  
= 400V  
CE  
I
= 100A  
C
6
T
J
= 150ºC  
4
I
= 50A  
27  
C
2
T = 25ºC  
J
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
3
6
9
12  
15  
18  
21  
24  
30  
33  
IC (A)  
RG (Ω)  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
6
5
4
3
2
1
0
7
6
5
4
3
2
1
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
0
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
R
= 3  
VGE = 15V  
Ω ,  
G
T
J
= 150ºC, V = 15V  
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 100A  
I
= 100A  
C
I
= 50A  
C
IC = 50A  
60  
40  
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
25  
50  
75  
100  
125  
150  
RG (Ω)  
TJ (ºC)  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
150  
140  
130  
120  
110  
100  
90  
160  
140  
120  
100  
80  
180  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
160  
140  
120  
100  
80  
R
G
= 3 , V = 15V  
Ω
R
G
= 3 , V = 15V  
GE  
Ω
GE  
V = 400V  
CE  
V
= 400V  
CE  
I
= 100A  
C
T
J
= 150ºC  
I
= 50A  
C
60  
T
J
= 25ºC  
60  
40  
40  
60  
20  
80  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC (A)  
TJ (ºC)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYN100N65C3H1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
140  
120  
100  
80  
32  
30  
28  
26  
24  
22  
20  
240  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
t r i  
t r i  
t
d(on) - - - -  
R
G
= 3 , V = 15V  
Ω
GE  
T
J
= 150ºC, V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 150ºC  
I
= 100A  
C
T
J
= 25ºC  
60  
I
= 50A  
C
40  
40  
0
20  
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG (Ω)  
IC (A)  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 22. Maximum Peak Load Current vs. Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
34  
32  
30  
28  
26  
24  
22  
20  
18  
t r i  
t
d(on) - - - -  
R
G
= 3 , V = 15V  
Ω
GE  
V
= 400V  
CE  
Triangular Wave  
I
= 100A  
C
T
= 150ºC  
= 75ºC  
J
60  
T
C
Square Wave  
I
= 50A  
V
V
= 400V  
= 15V  
C
CE  
GE  
40  
R
G
= 3ꢀ  
20  
D = 0.5  
0
25  
50  
75  
100  
125  
150  
10  
100  
1,000  
TJ (ºC)  
(kH)  
fmax  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYN100N65C3H1  
Fig. 24. Typ. Reverse Recovery Charge Qrr vs. -diF/dt  
Fig. 23. Typ. Forward characteristics  
20  
16  
12  
8
200  
175  
150  
125  
100  
75  
T
= 150ºC  
= 400V  
VJ  
V
R
I
F
= 200A  
T
VJ  
= 25ºC  
T
VJ  
= 150ºC  
100A  
50A  
50  
4
25  
0
0
0
0.5  
1
1.5  
2
2.5  
3
1000  
1200  
1400  
1600  
1800  
2000  
VF - [V]  
-diF/ dt [A/µs]  
Fig. 26. Typ. Recovery Time trr vs. -diF/dt  
Fig. 25. Typ. Peak Reverse Current IRM vs. -diF/dt  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
I
F
= 200A  
TVJ = 150ºC  
VR = 400V  
TVJ = 150ºC  
VR = 400V  
100A  
50A  
I
F
= 200A  
100A  
50A  
60  
40  
1000  
1200  
1400  
1600  
1800  
2000  
1000  
1200  
1400  
1600  
1800  
2000  
diF/dt [A/µs]  
-diF/dt [A/µs]  
Fig. 28. Maximum Transient Thermal Impedance ( Diode)  
Fig. 27. Typ. Recovery Energy Erec vs. -diF/dt  
1
5
TVJ = 150ºC  
VR = 400V  
I
F
= 200A  
4
3
2
1
0
0.1  
100A  
0.01  
0.001  
50A  
1000  
1200  
1400  
1600  
1800  
2000  
0.0001  
0.001  
0.01  
0.1  
1
10  
-diF/dt [A/µs]  
Pulse Width [s]  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYSREF:IXY_100N65C3(7D-Y42)10-14-14  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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