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IXYN82N120C3

型号：

IXYN82N120C3

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

204 K

下载PDF手册
Preliminary Technical Information  
1200V XPTTM IGBT  
GenX3TM  
VCES = 1200V  
IC110 = 66A  
VCE(sat)  3.20V  
tfi(typ) = 93ns  
IXYN82N120C3  
High-Speed IGBT  
for 20-50 kHz Switching  
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
E  
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
TC = 25°C (Chip Capability)  
TC = 110°C  
120  
66  
A
A
E   
C
ICM  
TC = 25°C, 1ms  
380  
A
G = Gate, C = Collector, E = Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2  
Clamped Inductive Load  
ICM = 164  
A
either emitter terminal can be used as  
Main or Kelvin Emitter  
(RBSOA)  
@VCE VCES  
PC  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
-55 ... +175  
Optimized for Low Switching Losses  
Square RBSOA  
2500V~ Isolation Voltage  
Positive Thermal Coefficient of  
VISOL  
50/60Hz  
IISOL 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Vce(sat)  
High Current Handling Capability  
International Standard Package  
Weight  
30  
g
Advantages  
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
4.5  
25 A  
500 A  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
Lamp Ballasts  
VCE(sat)  
IC = 82A, VGE = 15V, Note 1  
2.75  
3.76  
3.20  
V
V
©2019 IXYS CORPORATION, All Rights Reserved  
DS100389B(1/19)  
IXYN82N120C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
SOT-227B miniBLOC (IXYN)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
50  
S
Cies  
Coes  
Cres  
4060  
285  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
110  
Qg(on)  
Qge  
Qgc  
215  
26  
nC  
nC  
nC  
IC = 82A, VGE = 15V, VCE = 0.5 • VCES  
84  
td(on)  
tri  
Eon  
td(off)  
tfi  
29  
78  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
4.95  
192  
93  
VCE = 0.5 • VCES, RG = 2  
Note 2  
Eof  
2.78  
5.00 mJ  
f
td(on)  
tri  
29  
90  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 80A, VGE = 15V  
Eon  
td(off)  
tfi  
7.45  
200  
95  
mJ  
ns  
VCE = 0.5 • VCES, RG = 2  
ns  
Note 2  
Eoff  
3.70  
mJ  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.05  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYN82N120C3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
11V  
160  
140  
120  
100  
80  
V
= 15V  
GE  
13V  
12V  
13V  
11V  
10V  
9V  
10V  
9V  
8V  
7V  
6V  
8V  
60  
7V  
25  
40  
6V  
5V  
20  
5V  
0
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
160  
140  
120  
100  
80  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
10V  
9V  
I
= 164A  
C
8V  
7V  
I
= 82A  
C
60  
40  
6V  
5V  
I
= 41A  
75  
C
20  
0
-50  
-25  
0
25  
50  
100  
125  
150  
1
2
3
4
5
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
T
J
= 25oC  
I
= 164A  
C
60  
T
J
= 125oC  
25oC  
- 40oC  
82A  
40  
20  
41A  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
©2019 IXYS CORPORATION, All Rights Reserved  
IXYN82N120C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40oC  
VCE = 600V  
IC = 82A  
IG = 10mA  
25oC  
125oC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
10  
C
ies  
C
C
oes  
res  
60  
T
J
= 150oC  
40  
R
G
= 2  
Ω
20  
= 1 MHz  
5
f
dv / dt < 10V / ns  
0
200  
400  
600  
800  
1000  
1200  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYN82N120C3  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
10  
9
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
E
R
E
E
T
E
off  
on  
off  
on  
= 125oC , V = 15V  
= 2  
V
Ω  
= 15V  
G
GE  
J
GE  
8
V
= 600V  
V
= 600V  
CE  
CE  
7
I
= 80A  
C
T
J
= 125oC  
6
5
6
4
T
J
= 25oC  
4
3
I
= 40A  
C
2
2
1
0
40  
50  
60  
70  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
780  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
9
8
7
6
5
4
3
2
1
t f i  
td(off)  
E
R
E
off  
on  
700  
620  
540  
460  
380  
300  
220  
140  
T
J
= 125oC, V = 15V  
= 2  
V
Ω  
GE = 15V  
GE  
G
VCE = 600V  
V
= 600V  
CE  
I
= 80A  
I
= 40A  
C
C
IC = 40A  
I
= 80A  
10  
C
60  
40  
25  
50  
75  
100  
125  
2
4
6
8
12  
14  
16  
18  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
240  
200  
160  
120  
80  
280  
260  
240  
220  
200  
180  
160  
280  
240  
200  
160  
120  
80  
240  
230  
220  
210  
200  
190  
180  
170  
t f i  
td(off)  
t f i  
td(off)  
R
G
= 2 , V = 15V  
Ω  
GE  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 600V  
CE  
V
= 600V  
CE  
I
I
= 40A  
= 80A  
C
C
T
J
= 125oC  
T
J
= 25oC  
40  
40  
0
0
25  
50  
75  
100  
125  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
©2019 IXYS CORPORATION, All Rights Reserved  
IXYN82N120C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
t r i  
td(on)  
t r i  
td(on)  
T
= 125oC, V = 15V  
J
GE  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 600V  
CE  
V
= 600V  
CE  
T
J
= 125oC  
I
= 80A  
C
T = 25oC  
J
60  
60  
40  
I
= 40A  
C
40  
20  
20  
0
40  
50  
60  
70  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
t r i  
td(on)  
R
G
= 2 , V = 15V  
Ω  
GE  
V
= 600V  
CE  
I
I
= 80A  
= 40A  
C
60  
40  
C
20  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_82N120C3(8M)12-13-12-A  
IXYN82N120C3  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
©2019 IXYS CORPORATION, All Rights Reserved  
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