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IXYH50N65C3D1

型号：

IXYH50N65C3D1

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

8 页

PDF大小：

187 K

下载PDF手册
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Diode  
VCES = 650V  
IC110 = 50A  
VCE(sat)  2.10V  
tfi(typ) = 26ns  
IXYH50N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60 kHz Switching  
TO-247 (IXYH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
Tab  
=
E
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
132  
50  
50  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
250  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
A
400  
mJ  
SSOA  
V
GE= 15V, TVJ = 150°C, RG = 5  
ICM = 100  
A
μs  
W
Features  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
8
Optimized for 20-60kHz Switching  
Square RBSOA  
Anti-Parallel Fast Diode  
Avalanche Rated  
Short Circuit Capability  
International Standard Package  
(SCSOA)  
RG = 82, Non Repetitive  
PC  
TC = 25°C  
600  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
High Power Density  
Extremely Rugged  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Low Gate Drive Requirement  
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
50 A  
1.25 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
High Frequency Power Inverters  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.73  
2.10  
2.10  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100628(9/14)  
IXYH50N65C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 36A, VCE = 10V, Note 1  
18  
30  
S
Cies  
Coes  
Cres  
2290  
230  
50  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
P  
1
2
3
Qg(on)  
Qge  
Qgc  
86  
14  
40  
nC  
nC  
nC  
IC = 36A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
20  
36  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 36A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
0.80  
90  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 400V, RG = 5  
26  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
0.47  
0.80 mJ  
f
td(on)  
tri  
19  
37  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 36A, VGE = 15V  
Eon  
td(off)  
tfi  
1.60  
113  
32  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 5  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
0.70  
mJ  
P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
1.35  
Irr  
trr  
TJ = 150°C  
TJ = 150°C  
20  
115  
A
ns  
IF = 30A, VGE = 0V,  
-diF/dt = 500A/μs, VR = 400V  
RthJC  
0.60 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH50N65C3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
280  
240  
200  
160  
120  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
V
= 15V  
GE  
14V  
GE  
13V  
12V  
11V  
10V  
9V  
13V  
12V  
11V  
8V  
10V  
9V  
7V  
6V  
40  
8V  
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
0
5
10  
15  
20  
25  
30  
VCE (V)  
VCE (V)  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
V
= 15V  
10V  
9V  
GE  
13V  
11V  
I
= 72A  
C
8V  
7V  
I
= 36A  
C
I
= 18A  
C
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VCE - Volts  
TJ (ºC)  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I
= 72A  
C
T
= 150ºC  
25ºC  
J
- 40ºC  
36A  
18A  
4
5
6
7
8
9
10  
7
8
9
10  
11  
12  
13  
14  
15  
VGE (V)  
VGE (V)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH50N65C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
VCE = 325V  
IC = 36A  
IG = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
IC (A)  
QG (nC)  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
= 1 MHz  
f
100  
80  
C
ies  
60  
C
oes  
res  
40  
T
J
= 150ºC  
20  
C
R
G
= 5  
Ω
dv / dt < 10V / ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
500  
600  
700  
400
VCE (V)  
VCE (V)  
Fig. 12. Maximum Transient Thermal Impedance (IGBT)  
Fig. 11. Forward-Bias Safe Operating Area  
a ss  
s
a
1000  
100  
10  
0.4  
0.1  
V
Limit  
CE(sat)  
25µs  
100µs  
1ms  
1
T = 175ºC  
J
T
C
= 25ºC  
10ms  
Single Pulse  
DC  
0.1  
0.01  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS (V)  
Pulse Width (s)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N65C3D1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
6
5
4
3
2
1
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
8
7
6
5
4
3
2
1
0
E
R
E
on - - - -  
E
E
off  
on - - - -  
off  
= 5  
V
= 15V  
GE  
Ω ,  
G
T
J
= 150ºC , V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 72A  
C
T
J
= 150ºC  
I
= 36A  
35  
C
T
= 25ºC  
40  
J
15  
20  
25  
30  
35  
45  
50  
55  
60  
65  
70  
75  
5
25  
15  
10  
15  
20  
25  
30  
40  
45  
50  
55  
RG (Ω)  
IC (A)  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
480  
400  
320  
240  
160  
80  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
7
6
5
4
3
2
1
0
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
R
= 5  
VGE = 15V  
Ω ,  
G
T
J
= 150ºC, V = 15V  
GE  
VCE = 400V  
V
= 400V  
CE  
I
= 72A  
I
= 72A  
C
C
I
= 36A  
C
IC = 36A  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
50  
75  
100  
125  
150  
RG (Ω)  
TJ (ºC)  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
200  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
180  
160  
140  
120  
100  
80  
R
G
= 5 , V = 15V  
Ω
GE  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 72A  
C
T
= 150ºC  
J
I
= 36A  
C
T
J
= 25ºC  
60  
60  
40  
40  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
25  
50  
75  
100  
125  
150  
TJ (ºC)  
IC (A)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH50N65C3D1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
120  
100  
80  
60  
40  
20  
0
31  
28  
25  
22  
19  
16  
13  
180  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
t r i  
t
d(on) - - - -  
t r i  
T
J
= 150ºC, V = 15V  
GE  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
V
= 400V  
CE  
CE  
I
= 72A  
C
T
J
= 25ºC  
I
= 36A  
C
60  
T
J
= 150ºC  
40  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
IC (A)  
RG (Ω)  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 22. Maximum Peak Load Current vs. Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
140  
120  
100  
80  
25  
24  
23  
22  
21  
20  
19  
18  
t r i  
t
d(on) - - - -  
R
G
= 5 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 72A  
C
Triangular Wave  
60  
T
= 150ºC  
= 75ºC  
J
T
C
40  
V
V
= 400V  
= 15V  
CE  
GE  
I
= 36A  
C
20  
R = 5ꢀ  
G
Square Wave  
Duty Cycle = 0.5  
0
25  
50  
75  
100  
125  
150  
10  
100  
1000  
TJ (ºC)  
(kH)  
fmax  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N65C3D1  
Fig. 23. Diode Forward Characteristics  
Fig. 24. Reverse Recovery Charge vs. -diF/dt  
120  
100  
80  
60  
40  
20  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
T
= 150ºC  
= 400V  
VJ  
V
R
I
F
= 60A  
T
J
= 150ºC  
30A  
T
J
= 25ºC  
15A  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
VF (V)  
-diF/ dt (A/µs)  
Fig. 26. Reverse Recovery Time vs. -diF/dt  
Fig. 25. Reverse Recovery Current vs. -diF/dt  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
180  
160  
140  
120  
100  
80  
TVJ = 150ºC  
R = 400V  
TVJ = 150ºC  
R = 400V  
I
F
= 60A  
30A  
V
V
15A  
I
F
= 60A  
30A  
15A  
60  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
diF/dt (A/µs)  
-diF/dt (A/µs)  
I
Fig. 27. Dynamic Parameters QRR, RR vs.  
Fig. 28. Maximum Transient Thermal Impedance (Diode)  
Junction Temperature  
1
1.2  
1
V
= 400V  
R
I
= 30A  
F
-dI /dt = 500 A/µs  
F
0.8  
0.6  
0.4  
0.2  
0
0.1  
K
K
I
RR  
F
F
Q
RR  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
TJ (ºC)  
Pulse Width (s)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXY_50N65C3D1(5D) 9-03-14  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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